Abstract: Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Abstract: Methods and systems for providing illumination of a specimen for inspection are provided. One embodiment relates to a system configured to provide illumination of a specimen for inspection. The system includes an electrodeless lamp configured to generate light. The system is further configured such that the light illuminates the specimen during the inspection. Another embodiment relates to a system configured to inspect a specimen. The system includes an electrodeless lamp configured to generate light and one or more optical elements configured to direct the light to the specimen. The system also includes a detection subsystem configured to generate output responsive to light from the specimen. The output can be used to detect defects on the specimen. An additional embodiment relates to a method for providing illumination of a specimen for inspection. The method includes illuminating the specimen during the inspection with light generated by an electrodeless lamp.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe are provided. One method includes separating defects into bins based on regions in which the defects are located, defect types, and values of the defects for parameter(s) of a detection algorithm. The method also includes determining a number of the defects to be selected from each bin by distributing a user-specified target number of defects across the bins. In addition, the method includes selecting defects from the bins based on the determined numbers thereby creating a defect sample for use in selecting values of parameter(s) of the detection algorithm for use in the inspection recipe.

Abstract: Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.

Abstract: Computer-implemented methods and systems for determining different process windows for a wafer printing process for different reticle designs are provided. One method includes generating simulated images illustrating how each of the different reticle designs will be printed on a wafer at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in each of the different reticle designs using the simulated images. In addition, the method includes determining a process window for the wafer printing process for each of the different reticle designs based on results of the detecting step.

Abstract: Disclosed are apparatus and methods for optimizing a metrology tool, such as an optical or scanning electron microscope so that minimum human intervention is achievable during the optimization. In general, a set of specifications and an initial input data are initially provided for a particular target. The specifications provide limits for characteristics of images that are to be measured by the metrology tool. The metrology tool is then automatically optimized for measuring the particular target so as to meet one or more of the provided specifications without further significant human intervention with respect to the metrology tool. In one aspect, the input data provided prior to the automated optimization procedure includes a plurality of target locations and a synthetic image of the particular target.

Abstract: Systems and methods for acquiring information about a defect on a specimen are provided. One system includes an optical subsystem configured to acquire topography information about the defect. The system also includes an electron beam subsystem configured to acquire additional information about the defect. One method includes acquiring first data for the defect using an optical technique and second data for the defect using an electron beam technique. The first and second data is acquired while the specimen is disposed in a single vacuum chamber. The method also includes determining topography information about the defect from the first data. In addition, the method includes determining additional information about the defect from the second data.

Abstract: Various methods and systems for determining a position of inspection data in design data space are provided. One computer-implemented method includes determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer. The method also includes aligning the centroid to a centroid of a geometrical shape describing the alignment target. In addition, the method includes assigning a design data space position of the centroid of the alignment target as a position of the centroid of the geometrical shape in the design data space. The method further includes determining a position of inspection data acquired for the wafer in the design data space based on the design data space position of the centroid of the alignment target.

Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.

Abstract: Computer-implemented methods, carrier media, and systems for determining sizes of defects detected on a wafer are provided. One computer-implemented method includes separating the defects into groups based on output acquired for the defects by multiple channels of an inspection system used to detect the defects on the wafer. The method also includes separating the defects in one or more of the groups into subgroups based on the output acquired for the defects by one or more of the multiple channels. In addition, the method includes determining the sizes of one or more of the defects in one or more of the subgroups separately based on the output acquired for the defects by only one of the multiple channels and a calibration parameter. The calibration parameter is different for each of the subgroups and is acquired by using another system to measure actual sizes of defects detected on other wafers.

Abstract: Computer-implemented methods that include correlating a backside defect with a frontside defect detected on a specimen are provided. The defects are correlated if a portion of the backside defect on the backside of the specimen is opposite to a portion of the frontside defect on the frontside of the specimen. In particular, the defects are correlated if the portion of the backside defect is aligned with the portion of the frontside defect along an axis perpendicular to the frontside and the backside of the specimen. The method may also include altering a parameter of a process tool in response to the backside defect to reduce frontside defects on additional specimen processed in the process tool. Computer-implemented methods for analyzing data representing spatial characteristics of backside defects detected on a specimen to classify the backside defects are also provided. Analyzing the data may include spatial signature analysis of the data.

Abstract: Systems configured to generate output corresponding to defects on a specimen and systems configured to generate phase information about defects on a specimen are provided. One system includes an optical subsystem that is configured to create interference between a test beam and a reference beam. The test beam and the reference beam are reflected from the specimen. The system also includes a detector that is configured to generate output representative of the interference between the test and reference beams. The interference increases contrast between the output corresponding to the defects and output corresponding to non-defective portions of the specimen.

Abstract: Methods for identifying array areas in dies formed on a wafer and methods for setting up such methods are provided. One method for identifying array areas in dies formed on a wafer includes comparing an array pattern in a template image acquired in one of the array areas to a search area image acquired for the wafer. The method also includes determining areas in the search area image in which a pattern is formed that substantially matches the array pattern in the template image based on results of the comparing step. In addition, the method includes identifying the array areas in the dies formed on the wafer based on results of the determining step.

Abstract: Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer based on one or more fabrication processes that will be used to form a metrology target structure on the wafer and one or more initial metrology target structure designs. The method also includes creating the metrology target structure design based on results of the simulating step.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

Abstract: Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout are provided. One computer-implemented method for creating a metrology target structure design for a reticle layout includes simulating how one or more initial metrology target structures will be formed on a wafer at different values of one or more parameters of one or more fabrication processes that will be used to form a metrology target structure on the wafer based on the one or more fabrication processes, one or more parameters of the wafer, and one or more initial metrology target structure designs. The method also includes simulating one or more spectra that will be produced by a predetermined metrology system configuration for each of the simulated one or more initial metrology target structures. In addition, the method includes creating the metrology target structure design based on the one or more spectra.

Abstract: Fourier filters, inspection systems, and systems for fabricating Fourier filters are provided. One Fourier filter configured for use in an inspection system includes a substrate that is substantially transparent to light from a specimen illuminated by the inspection system. The Fourier filter also includes an array of patterned features formed on the substrate. The patterned features are formed of one or more pigments on the substrate. The patterned features are configured to block light reflected and diffracted from structures on the specimen and to allow light scattered from defects on the specimen to pass through the substrate.

Abstract: An illumination subsystem configured to provide illumination for a measurement system includes first and second light sources configured to generate light for measurements in different wavelength regimes. The illumination subsystem also includes a TIR prism configured to be moved into and out of an optical path from the first and second light sources to the measurement system. If the TIR prism is positioned out of the optical path, light from only the first light source is directed along the optical path. If the TIR prism is positioned in the optical path, light from only the second light source is directed along the optical path. Various measurement systems are also provided. One measurement system includes an optical subsystem configured to perform measurements of a specimen using light in different wavelength regimes directed along a common optical path. The different wavelength regimes include vacuum ultraviolet, ultraviolet, visible, and near infrared wavelength regimes.