Abstract: Various methods, carrier media, and systems for detecting defects on a specimen using a combination of bright field channel data and dark field channel data are provided. One computer-implemented method includes combining pixel-level data acquired for the specimen by a bright field channel and a dark field channel of an inspection system. The method also includes detecting defects on the specimen by applying a two-dimensional threshold to the combined data. The two-dimensional threshold is defined as a function of a threshold for the data acquired by the bright field channel and a threshold for the data acquired by the dark field channel.

Abstract: Methods and systems for inspecting a specimen are provided. One method includes directing ultraviolet light to a specimen. The method also includes detecting light scattered from the specimen having a selected wavelength range. In addition, the method includes detecting features, defects, or light scattering properties of the specimen using signals representative of the detected light. One inspection system includes an illumination subsystem configured to direct ultraviolet light to a specimen. The system also includes a channel configured to detect light scattered from the specimen having a selected wavelength range. In addition, the system includes a processor configured to detect features, defects, or light scattering properties of the specimen using signals that are representative of the detected light.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: Systems and methods for providing illumination of a specimen for inspection are provided. One system includes one or more first optical elements configured to illuminate a diffuser with a predetermined pattern of coherent light. The system also includes one or more second optical elements configured to image light exiting the diffuser onto an illumination pupil of the system such that the predetermined pattern is reproduced in the illumination pupil. In addition, the system includes an objective lens configured to focus light from the predetermined pattern in the illumination pupil onto a specimen plane. In one embodiment, the light focused onto the specimen plane is not substantially coherent. In another embodiment, the predetermined pattern is selected based on an illumination mode selected for the inspection of the specimen.

Abstract: Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

Abstract: Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.

Abstract: Systems and methods for measuring stress in a specimen are provided. One system includes an optical subsystem configured to measure stress-induced birefringence in patterned structures formed on the specimen. In some embodiments, the optical subsystem may be configured as a spectroscopic ellipsometer, a multi-angle laser ellipsometer, a polarimeter, a polarized reflectometer, or some combination thereof. The system also includes a processor coupled to the optical subsystem. The processor is configured to determine stress in a material of the patterned structures using the stress-induced birefringence measurements. One method includes measuring stress-induced birefringence in patterned structures formed on the specimen using an optical technique. The method also includes determining stress in a material of the patterned structures using the stress-induced birefringence measurements.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: Systems and methods for repairing defects on a specimen are provided. A method may include processing a specimen, detecting defects on the specimen, and repairing one or more of the defects. An additional method may include detecting defects on a specimen, repairing one or more of the defects, and inspecting the specimen to detect defects remaining on the specimen subsequent to repair. A system may include a process chamber, a measurement device configured to detect defects on a specimen, and a repair tool configured to repair one or more of the defects detected on the specimen. An additional system may include a measurement device, a repair tool, and an inspection tool configured to detect defects remaining on the specimen subsequent to repair. The systems may also include a processor configured to alter a parameter of an instrument coupled to the repair tool in response to output from the measurement device.

Abstract: Wafer inspection systems and methods are provided. One inspection system includes a module measurement cell coupled to a host inspection system by a wafer handler. The module measurement cell is configured to inspect a wafer using one or more modes prior to inspection of the wafer by the host inspection system. The one or more modes include backside inspection, edge inspection, frontside macro defect inspection, or a combination thereof. Another inspection system includes two or more low resolution electronic sensors arranged at multiple viewing angles. The sensors are configured to detect light returned from a wafer substantially simultaneously. A method for analyzing inspection data includes selecting a template corresponding to a support device that contacts a backside of a wafer prior to inspection of the backside of the wafer. The method also includes subtracting data representing the template from inspection data generated by inspection of the backside of the wafer.

Abstract: Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

Abstract: Systems configured to provide illumination of a specimen during inspection are provided. One system includes catoptric elements configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The catoptric elements include positive and negative elements configured such that pupil distortions of the positive and negative elements are substantially canceled. Another system includes a dioptric element and a catoptric element. The dioptric element and the catoptric element are configured to direct light from a light source to a line across the specimen at an oblique angle of incidence. The dioptric and catoptric elements are also configured such that pupil distortions of the dioptric and catoptric elements are substantially canceled.

Abstract: Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a thin film characteristic and an electrical property of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: Methods and systems for creating a recipe for a defect review process are provided. One method includes determining an identity of a specimen on which the defect review process will be performed. The method also includes identifying inspection results for the specimen based on the identity. In addition, the method includes creating the recipe for the defect review process based on the inspection results. One system includes a sensor configured to generate output responsive to an identity of a specimen on which the defect review process will be performed. The system also includes a processor configured to determine the identity of the specimen using the output, to identify inspection results for the specimen based on the identity, and to create the recipe for the defect review process based on the inspection results.

Abstract: Methods and systems for preparing a sample for thin film analysis are provided. One system includes an energy beam source configured to generate an energy beam. The system also includes an energy beam delivery subsystem configured to direct the energy beam to a sample and to modify the energy beam such that the energy beam has a substantially flat-top profile on the sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample. One method includes generating an energy beam and modifying the energy beam such that the energy beam has a substantially flat-top profile. The method also includes directing the energy beam to a sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample.

Abstract: This invention includes a method of integrating into a semiconductor specimen fabrication station a process diagnostic module that performs on the semiconductor specimen a processing operation that otherwise would not be performed by the processing components to thereby make the fabrication station more efficient and flexible to use. The process diagnostic module includes, for example, a specimen parameter measurement system or a specimen inspection system and is configured to mount on a front-opening interface mechanical standard (FIMS) load port and fits within the allowable spatial envelope. This invention further includes located external to the semiconductor specimen fabrication station a processor that receives and processes data acquired by the process diagnostic module during its operation.

Abstract: Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

Abstract: Systems and methods for characterizing polishing of a specimen are provided. One method includes scanning a specimen with an eddy current device during polishing to generate output signals at measurement spots across the specimen. The method also includes combining a portion of the output signals generated at the measurement spots located within a zone on the specimen. In addition, the method includes determining a characteristic of polishing within the zone from the combined portion of the output signals. In some instances, a zone may include a predetermined range of radial and azimuthal positions on the specimen. In one embodiment, the method may include determining a characteristic of polishing within more than one zone on the specimen. Some embodiments may include determining an additional characteristic of polishing from the characteristic of polishing within more than one zone on the specimen.

Abstract: Systems configured to generate output corresponding to defects on a specimen and systems configured to generate phase information about defects on a specimen are provided. One system includes an optical subsystem that is configured to create interference between a test beam and a reference beam. The test beam and the reference beam are reflected from the specimen. The system also includes a detector that is configured to generate output representative of the interference between the test and reference beams. The interference increases contrast between the output corresponding to the defects and output corresponding to non-defective portions of the specimen.