Abstract: An integrated optical planar waveguide chip comprising materials and structures such as substrates, adhesives, capping materials, and waveguide structures which are absorbing at the wavelength of the working radiation.

Abstract: The present invention provides a probe beam profile—modulated optical reflectivity metrology system having a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample in a manner so that the rays within the probe beam create a spread of angles of incidence. A detector array simultaneously measures intensities of the rays within the reflected/diffracted probe beam simultaneously at different angles of incidence. The intensity and angle of incidence information is used to analyze the sample.

Abstract: A high performance objective having very small central obscuration, an external pupil for apertureing and Fourier filtering, loose manufacturing tolerances, large numerical aperture, long working distance, and a large field of view is presented. The objective is preferably telecentric. The design is ideally suited for both broad-band bright-field and laser dark field imaging and inspection at wavelengths in the UV to VUV spectral range.

Abstract: In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target radiation onto an edge surface of a wafer, the radiation targeting assembly comprising a first expanded paraboloid or expanded ellipsoid reflector positioned adjacent the edge surface of the wafer, a reflected radiation collecting assembly that collects radiation reflected from the surface, a signal processing module to generate surface parameter data from the reflected radiation, and a defect detection module to analyze the surface parameter data to detect a defect on the surface.

Abstract: An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors.

Abstract: At least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structure have properties (such as one or more of the following: dimensions and coefficient of friction) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.

Abstract: A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.

Abstract: A method and apparatus for inspecting specimens or patterned transmissive substrates, such as photomasks, for unwanted particles and features, particularly those associated with contacts, including irregularly shaped contacts. A specimen is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and/or reflected light collection optics and detectors collect and generate signals representative of the light transmitted by the substrate. The defect identification of the substrate is performed using those transmitted light signals. Defect identification is performed using an inspection algorithm by comparing image feature representations of a test specimen with a reference specimen, and using a boundary computer and flux comparison device to establish tight boundaries around contacts and compute flux differences between the test and reference specimen contacts.

Abstract: Various computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects are provided. One computer-implemented method for determining if actual defects are potentially systematic defects or potentially random defects includes comparing a number of actual defects in a group to a number of randomly generated defects in a group. The actual defects are detected on a wafer. A portion of a design on the wafer proximate a location of each of the actual defects in the group and each of the randomly generated defects in the group is substantially the same. The method also includes determining if the actual defects in the group are potentially systematic defects or potentially random defects based on results of the comparing step.

Abstract: Disclosed are apparatus and methods for inspecting or measuring one or more semiconductor targets. An incident beam is directed towards a first target as the first target substantially, continuously moves such that the incident beam remains directed at such first target during a first time period in which the first target substantially, continuously moves between a first position and a second position. An output beam scattered from the first target, in response to the incident beam being directed towards the first target during the first time period in which the first target substantially, continuously moves between the first and second positions, is detected such that information is obtained from the detected output beam during the first time period. The first time period is selected so that the information that is collected from the detected output beam during such first time period can be used to determine a characteristic of the first target.

Abstract: In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct a beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.

Abstract: A compact and versatile multi-spot inspection imaging system employs an objective for focusing an array of radiation beams to a surface and a second reflective or refractive objective having a large numerical aperture for collecting scattered radiation from the array of illuminated spots. The scattered radiation from each illuminated spot is focused to a corresponding optical fiber channel so that information about a scattering may be conveyed to a corresponding detector in a remote detector array for processing. For patterned surface inspection, a cross-shaped filter is rotated along with the surface to reduce the effects of diffraction by Manhattan geometry. A spatial filter in the shape of an annular aperture may also be employed to reduce scattering from patterns such as arrays on the surface.

Abstract: Optical proximity correction methods and apparatus are disclosed. A simulated geometry representing one or more printed features from a reticle is generated using an optical proximity correction (OPC) model that takes into account a reticle design and one or more parameters from a process window of a stepper. An error function is formed that measures a deviation between the simulated geometry and a desired design of the one or more printed features. The error function takes into account parameters (p0 . . . pJ) from across the process window in addition to, or in lieu of, a best focus and a best exposure for the stepper. The reticle design is adjusted in a way that reduces the deviation as measured by the error function, thereby producing an adjusted reticle design.

Abstract: Inspection systems, circuits and methods are provided to enhance defect detection by addressing anode saturation as a limiting factor of the measurement detection range of a photomultiplier tube (PMT) detector. In accordance with one embodiment of the invention, a method for inspecting a specimen includes directing light to the specimen and detecting light scattered from the specimen. The step of detecting may include monitoring an anode current of the PMT detector, and detecting features, defects or light scattering properties of the specimen using the anode current until the anode current reaches a predetermined threshold. Thereafter, the method may use a dynode current of the PMT for detecting the features, defects or light scattering properties of the specimen.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: A system and method for inspection is disclosed. The design includes focusing illumination beams of radiation at an optical axis to an array of illuminated elongated spots on the surface at oblique angle(s) of incidence to the surface, performing a linear scan along a linear axis, wherein the linear axis is offset from the optical axis by a not insubstantial angular quantity, and imaging scattered radiation from the spots onto an array of receivers so that each receiver in the array receives scattered radiation from a corresponding spot in the array of spots.

Abstract: One embodiment relates to a method of electron beam imaging of a target area of a substrate. During an imaging phase, an electron beam is controllably scanned over the target area of the substrate, and extracted secondary electrons are detected. An electric field at a surface of the substrate is changed from an original electric field after the imaging phase. During a charge control phase, the electron beam is controllably scanned over the target area of the substrate. The electric field at the surface of the substrate is reverted back to the original electric field after the charge control phase. The imaging and charge control frames are interleaved. Other embodiments and features are also disclosed.

Abstract: An ellipsometer having a light source for generating a probe beam along a probe beam path. A polarizing beam splitter passes the probe beam along the probe beam path, at least in part, as the probe beam passes through the beam splitter in a first direction, and diverts the probe beam along a detection path, at least in part, as the probe beam passes through the beam splitter in a second direction that is substantially opposite of the first direction. A compensator variably retards at least portions of the probe beam along at least one axis of the compensator, thereby changing an orientation of the light passing through the compensator. Optics focus the probe beam on a spot on a substrate. A concave mirror receives the probe beam from the spot on the substrate as it travels along the probe beam path in the first direction, and sends the probe beam back along the probe beam path in the second direction. A detector receives the probe beam along the detection path.

Abstract: An optical modulation spectroscopy system comprises a probe beam source and components for directing the probe beam at a sample. It also may comprise a modulated pump beam source and components for directing a modulated pump beam at the sample. A dispersive system may disperse the reflected probe beam into constituent wavelengths to provide dispersed beams. A detector array may detect multiple dispersed reflected probe beams and processes a signal corresponding to each. Thus, measurement may be multiplexed for very fast performance.