Abstract: A multi-spot scanning technique using a spot array having a predetermined gap between spots can advantageously provide scalability to a large number of spots as well as the elimination of cross-talk between channels. The multi-spot scanning technique can select a number of spots for the spot array (1D or 2D), determine a separation between the spots to minimize crosstalk, and perform a scan on a wafer using the spot array and a full field of view (FOV). Performing the scan includes performing a plurality of scan line cycles, wherein each scan line cycle can fill in gaps left by previous scan line cycles. This “delay and fill” scan allows large spacing between spots, thereby eliminating cross-talk at the detector plane. In one embodiment, the scan is begun and ended outside a desired scan area on the wafer to ensure full scan coverage.

Abstract: Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry.

Abstract: In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate the optical head around the edge of the wafer to detect defects on the edge of the wafer.

Abstract: One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer for optimizing the performance of a process tool for processing a workpiece.

Abstract: Apparatus and method for reducing the load on an automated material handling system during processing of materials are disclosed. A materials processing tool with one or more load ports is equipped with at least one movable buffer attached to the tool front end. The buffer is configured to receive a materials pod from the automated material handling system at a storage location and move the pod to one or more of the one or more of the load ports and/or receive a pod from one or more of the one or more load ports and move the pod to the storage location. Any pod in the buffer is accessible either manually or by the material handling system.

Abstract: A method and apparatus for inspecting patterned substrates, such as photomasks, for unwanted particles and features occurring on the transmissive as well as pattern defects. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate. The defect identification of the substrate is performed using transmitted and reflected light signals from a baseline comparison between two specimens, or one specimen and a database representation, to form a calibration pixelated training set including a non-defective region. This calibration pixilated training set is compared to a transmitted-reflected plot map of the subject specimen to assess surface quality.

Abstract: Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.

Abstract: One embodiment relates to a thermal field emission electron gun. The electron gun includes a high-vacuum chamber, a thermal field emission cathode including a filament and a tip, a suppressor electrode, an extraction electrode, and a high-voltage power source. The high-voltage power source is coupled to the filament and to the suppressor and extraction electrodes such that the suppressor electrode is at a negative voltage potential in relation to the filament and the extraction electrode is at a positive voltage potential in relation to the filament. A current-limiting resistor is electrically coupled in series with the suppressor electrode. Applicant has determined that such a current-limiting resistor substantially reduces undesirable discharges and improve the reliability and lifetime of the electron gun. Other embodiments, aspects and features are also disclosed.

Abstract: Methods and systems for binning defects detected on a specimen are provided. One method includes comparing a test image to reference images. The test image includes an image of one or more patterned features formed on the specimen proximate to a defect detected on the specimen. The reference images include images of one or more patterned features associated with different regions of interest within a device being formed on the specimen. If the one or more patterned features of the test image match the one or more patterned features of one of the reference images, the method includes assigning the defect to a bin corresponding to the region of interest associated with the reference image.

Abstract: The invention is a method for generating a design rule map having a spatially varying overlay error budget. Additionally, the spatially varying overlay error budget can be employed to determine if wafers are fabricated in compliance with specifications. In one approach a design data file that contains fabrication process information and reticle information is processed using design rules to obtain a design map with a spatially varying overlay error budget that defines a localized tolerance to overlay errors for different spatial locations on the design map. This spatially varying overlay error budget can be used to disposition wafers. For example, overlay information obtained from measured metrology targets on a fabricated wafer are compared with the spatially varying overlay error budget to determine if the wafer overlay satisfies the required specification.

Abstract: An optical inspection system for inspecting a substrate. A beam source produces a light beam and directs it toward a surface of the substrate, thereby producing a reflected light beam that is received by an intensifier module. A photocathode receives the reflected light beam at a first surface and producing a shower of photoelectrons at a second opposing surface. An electrical field receives the shower of photoelectrons and accelerates the photoelectrons away from the second surface of the photocathode, thereby producing an enhanced output. A sensor receives the enhanced output from the intensifier module and produces electrical signals in response to the enhanced output. A controller receives the electrical signals and produces images of the substrate, based at least in part on the electrical signals. The controller also controls and coordinates the operation of the beam source, the intensifier module, and the sensor.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Methods and systems for generating an inspection process for an inspection system are provided. One computer implemented method includes generating inspection data for a selected defect on a specimen at different values of one or more image acquisition parameters of the inspection system. The method also includes determining which of the different values produces the best inspection data for the selected defect. In addition, the method includes selecting the different values determined to produce the best inspection data as values of the one or more image acquisition parameters to be used for the inspection process.

Abstract: A charged particle optic apparatus for improvement in resolution of an electrostatic, multi-beam column is disclosed. The charged particle optic apparatus includes an electrostatic lens array having a first plurality of apertures and a first magnetic pole piece disposed proximate the electrostatic lens array. The first magnetic pole piece includes a second plurality of apertures. The charged particle optic apparatus also includes a second magnetic pole piece disposed proximate the electrostatic lens array such that the electrostatic lens array is between the first magnetic pole piece and the second magnetic pole piece. The second magnetic pole piece includes a third plurality of apertures. The first, second and third pluralities of apertures are aligned with each other. The charged particle optic apparatus may be implemented in a charged particle beam system.

Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

Abstract: Methods and apparatus, including computer program products, implementing and using techniques for optimizing feature printability on a semiconductor wafer. A reticle with a quasi-periodic structure is provided. The quasi-periodic structure includes several elements that each contribute to the printed feature to be printed on the wafer. Each element exhibits a slight variation in a reticle feature characteristic compared to an adjacent other element in the quasi-periodic structure. The reticle with the quasi-periodic structure is used to print several printed features on the semiconductor wafer. Each printed feature corresponds to a specific element in the quasi-periodic structure. A metrology process is performed on the semiconductor wafer to generate a signature for each of the printed features. The signature is used to determine an optimum reticle feature characteristic that results in an optimum printed feature.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: One embodiment pertains to a method of electron beam lithography. An illumination electron beam is formed, and a dynamic pattern generating device is used to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam from said pattern so as to form a patterned electron beam. The patterned electron beam is projected onto a platter configured to hold and rotate a plurality of target substrates. Said generated pattern of pixels is shifted in correspondence with the rotation of the platter so that the patterned electron beam writes a swath path of pixels over the target substrates. Other features, aspects and embodiments are also disclosed.

Abstract: One embodiment relates to an apparatus for inspecting a substrate using charged particles. The apparatus includes an illumination subsystem, an objective subsystem, a projection subsystem, and a beam separator interconnecting those subsystems. The apparatus further includes a detection system which includes a scintillating screen, a detector array, and an optical coupling apparatus positioned therebetween. The optical coupling apparatus includes both refractive and reflective elements. Other embodiments and features are also disclosed.

Abstract: Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information.