Patent number: 11887684
Abstract: A storage device includes a nonvolatile memory device and a memory controller. An operating method of the storage device includes sending, at the memory controller, a first read command and first offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, first read operations based on the first read command and the first offset information, sending, at the nonvolatile memory device, a result of the first read operations as first data to the memory controller, sending, at the memory controller, a second read command, read voltage levels, and second offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, second read operations based on the second read command, the read level information, and the second offset information, and sending, at the nonvolatile memory device, results of the second read operations as second data to the memory controller.
Type:
Grant
Filed:
September 29, 2021
Date of Patent:
January 30, 2024
Assignees:
SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY Research and Business Foundation
Inventors:
Haedong No, Youjin Jeon, Hyeji Yun, Jongtaek Seong, Jungeol Baek, Youn-Soo Cheon