Abstract: This disclosure provides example methods, devices, and systems for a sensor having a front seal. In one embodiment, a system may comprise a sensing element; a header coupled to the sensing element; a housing coupled to the header; a screen joined to an adaptor and coupled to the housing, wherein a first gap separates the adaptor and the sensing element and a second gap separates the adaptor and the header; and wherein a stress applied at a front surface of the adaptor is transferred to the housing, and the first gap is used to isolate the sensing element from the stress and the second gap is used to isolate the header from the stress.

Abstract: A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Abstract: This disclosure provides systems and methods for a two-dimensional material-based accelerometer. In one embodiment, an accelerometer comprises a substrate; a membrane suspended over an opening in the substrate to form a suspended membrane, wherein the membrane is composed of a two-dimensional material; a mass structure coupled to the suspended membrane; and wherein the mass structure distorts the suspended membrane about a first axis in response to an applied acceleration providing a first change in a conductance of the suspended membrane so that the applied acceleration along the first axis can be detected.

Abstract: Certain implementations of the disclosed technology may include systems and methods for dynamic pressure testing of transducers in communication with a liquid. A method is provided that can include dynamically pressurizing a liquid in a cavity associated with a housing. While dynamically pressurizing the liquid, the method includes simultaneously measuring: a change in volume of the liquid; a test frequency response, by a test transducer in communication with the liquid; and a reference frequency response, by a reference transducer in communication with the liquid. The method may further determine a normalized frequency response of the test transducer, based at least in part on the test frequency response and the reference frequency response. The method may further provide an indication of the normalized frequency response of the test transducer and an indication of the bulk modulus of the liquid.

Abstract: Systems and methods are disclosed herein for selectively configuring an impedance of a transducer. A configurable transducer system is provided that can include a first region configured for receiving an applied stress and one or more sensing branches in communication with the first region. Each sensing branch can include an active piezoresistive area; three or more conduction paths configured in electrical communication with the active piezoresistive area; one or more trimmable links configured in parallel communication with at least two of the three or more conduction paths; and two or more connection terminals in electrical communication with the three or more conduction paths. The trimmable links are configured to be selectively opened to set a value of nominal impedance associated with the active piezoresistive area based on a desired impedance of the configurable transducer.

Abstract: The invention is an improved header and corresponding port associated with a transducer assembly. The header and port define mating threaded portions, thread stop portions, and a weld gap region. The thread stop portions are configured to mate and maintain a pre-loading tension between the threaded portions during and after applying a weld in the weld gap region. The weld gap region is configured to have a predetermined gap distance such that the weld seals the transducer without stress in the weld. The mating of the first and second thread stops are configured to maintain at least a portion of the pre-loading tension.

Abstract: The present invention provides a self-heated pressure sensor assembly and method of utilizing the same. The self-heated pressure sensor assembly regulates and maintains the temperature of the pressure sensor, regardless of the external temperature environment, without an external heater as in prior art embodiments. Exemplary embodiments of the pressure sensor assembly incorporate a resistance heater that is built into the sensing chip of the pressure sensor assembly. The pressure sensor assembly also utilizes the resistance of the pressure sensing elements to monitor the temperature of the assembly, which works alongside the resistance heater to maintain a stable temperature within the pressure sensor assembly.

Abstract: Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.

Abstract: Systems and methods are disclosed for a pressure sensor device. The pressure sensor device includes a header that defines an interior cavity including one or more tether connecting regions. The header further defines an outer portion in communication with the interior cavity; the outer portion includes a plurality of through bores in communication with an exterior portion of the header for insertion of header pins through the header. The pressure sensor device includes a pressure sensor chip disposed within the interior cavity of the header. One or more anchoring tethers are attached to the corresponding one or more tether connecting regions. The pressure sensor chip is free to move within the interior cavity of the header, and the one or more anchoring tethers are in communication with the pressure sensor chip and are configured to limit movement of the pressure sensor chip within the header.

Abstract: Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

Abstract: Systems and methods are disclosed for a switched, multiple range sensor system including multiple transducers. In one embodiment, a method is provided that includes receiving and measuring at a first transducer and a second transducer, a pressure to generate a respective first and second pressure signal; amplifying the first and second pressure signals with corresponding first and second fixed-gain amplifier to generate first and second amplified pressure signals; selecting for monitoring, the first or second amplified pressure signal; converting the selected amplified pressure signal to an intermediate digital pressure signal; measuring, at a thermal sensor associated with the selected amplified pressure signal, a temperature; compensating, based on the measured temperature, the intermediate digital pressure signal to generate a compensated digital pressure output signal; and outputting the compensated digital pressure output signal.

Abstract: A flexible transducer structure suitable for attaching to a curved surface such as the leading edge of an aircraft wing is provided. In one example embodiment, a method may include receiving, at a sensor disposed on a flexible sheet, a pressure, wherein the sensor is electrically coupled to a conductive trace disposed on the flexible sheet; measuring, by the sensor, the pressure to generate a pressure signal; outputting, by the sensor, to the conductive trace, the pressure signal, wherein the conductive trace extends away from the sensor on the flexible sheet; and wherein the flexible sheet is adaptable to conform to a contour of a curved surface.

Abstract: This disclosure provides example methods, devices, and systems for a sensor having a front seal. In one embodiment, a system may comprise a sensing element; a header coupled to the sensing element; a housing coupled to the header; a screen joined to an adaptor and coupled to the housing, wherein a first gap separates the adapter and the sensing element and a second gap separates the adapter and the header; and wherein a stress applied at a front surface of the adapter is transferred to the housing, and the first gap is used to isolate the sensing element from the stress and the second gap is used to isolate the header from the stress.

Abstract: The disclosed technology may include systems, methods, and apparatus for optical measurements. A method is provided that includes receiving, by first and second Extrinsic Fabry-Perot Interferometer (EFPI) sensors, respective portions of interrogation light. The first EFPI sensor is responsive to a measurement stimulus and both the first EFPI sensor and the second EFPI sensor are responsive to a common mode stimulus. The method includes detecting a measurement signal and a first common-mode signal responsive to receiving altered interrogation light from the first EFPI sensor, the measurement signal corresponding to the measurement stimulus. The method includes detecting a second common mode signal responsive to receiving altered light from the second EFPI sensor.

Abstract: Certain implementations of the disclosed technology may include Fabry-Perot Interferometer (FPI)-based sensors systems and methods for measuring a desired stimulus. In accordance with an example implementation of the disclosed technology, a method is provided for receiving, by a Fabry-Perot Interferometer (FPI) sensor, first interrogation light having a first wavelength and second interrogation light having a second wavelength. The FPI sensor is configured to alter the received first interrogation light and the second interrogation light responsive to a measurement stimulus. The method includes detecting, by a first optical detector, a measurement signal responsive to receiving the altered first interrogation light and the altered second interrogation light from the FPI sensor, the measurement signal corresponding to the measurement stimulus. The method includes producing a measurement output signal, the measurement output signal representing an intensity of the measurement signal.

Abstract: Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: This disclosure provides example methods, devices, and systems for a three-lead electronic switch system adapted to replace a mechanical switch. A device is disclosed that includes a sensor, a current limiting circuit, an output switching circuit comprising a first switching device and a second switching device, and a three lead interface circuit in communication with the output switching circuit and the current limiting circuit. The device includes an electronic switching circuit in communication with the sensor, the current limiting circuit, and the output switching circuit. The electronic switching circuit is configured to drive the first and second switching devices in complementary conduction states responsive to determining the output of the sensor relative to a threshold voltage. The output switching circuit includes a first terminal, a second terminal, and a return terminal that are configured to provide power to the electronic switching circuit while providing an indication of the conduction states.

Abstract: Certain implementations of the disclosed technology may include systems and methods for dynamic pressure testing of transducers in communication with a liquid. A method is provided that can include dynamically pressurizing a liquid in a cavity associated with a housing. While dynamically pressurizing the liquid, the method includes simultaneously measuring: a change in volume of the liquid; a test frequency response, by a test transducer in communication with the liquid; and a reference frequency response, by a reference transducer in communication with the liquid. The method may further determine a normalized frequency response of the test transducer, based at least in part on the test frequency response and the reference frequency response. The method may further provide an indication of the normalized frequency response of the test transducer and an indication of the bulk modulus of the liquid.

Abstract: A header assembly for a pressure sensor and methods for manufacturing and using the same are provided. In one example embodiment, a header insert may include a base; a hollow protusion coupled to the base and having a metalized inner surface and a metalized outer surface, wherein the metalized outer surface of the hollow protrusion is used to couple to a header and the metalized inner surface of the hollow protrusion is used to couple to a header pin; and wherein a seal is formed between the header, the header insert and the header pin.