Patents Assigned to Kyoto Institute of Technology
  • Patent number: 11912952
    Abstract: A material comprising: a support 10; and a brush layer 20 containing a brush-like polymer chain assemblage 21 formed of a plurality of polymer chains and a swelling liquid 22, in which a brush layer 20 is swollen with the swelling liquid 22, the brush layer 20 retaining on the surface a lubricating liquid 30, and the swelling liquid 22 contained in the brush layer 20 and the lubricating liquid 30 being phase-separated to form a liquid-liquid phase separation interface 40 in between and a sliding system using the material.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: February 27, 2024
    Assignees: KYOTO UNIVERSITY, NATIONAL INSTITUTE OF TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY
    Inventors: Yoshinobu Tsujii, Keita Sakakibara, Takaya Sato, Hiroyuki Arafune, Ken Nakano, Mayu Miyazaki
  • Patent number: 11802348
    Abstract: An element body has an exposed surface including a selective surface material which is to be coated with the coating material and a non-selected surface material which is not to be coated with the coating material. The selected surface material has different material properties than the non-selected surface material. The element body is coated with the coating material by applying a surface modifier only on the surface of the selected surface material and thereafter coating the surface of the selected surface material to which the surface modifier has been applied with the coating material.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: October 31, 2023
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Yasushi Yoshida, Tatsuya Fukutani, Tatsuo Kunishi, Masahiko Minoda, Ryota Mori
  • Patent number: 11699600
    Abstract: A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: July 11, 2023
    Assignees: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, MIRISE Technologies Corporation, National University Corporation Kyoto Institute of Technology
    Inventors: Tatsuji Nagaoka, Hiroki Miyake, Hiroyuki Nishinaka, Yuki Kajita, Masahiro Yoshimoto
  • Publication number: 20230100818
    Abstract: The present invention provides a crosslinking agent which can improve crosslinked fluoroelastomer high-temperature vapor resistance and a crosslinked fluoroelastomer having improved high-temperature vapor resistance. The present invention provides a compound having a structure represented by the following formula (1) (in the formula, R1 to R6 are each a hydrogen atom, a substituent, or a leaving group, and two or more of R1 to R6 are leaving groups; Ra to Rc are each a hydrogen atom or a substituent; and n is an integer from 2 to 5).
    Type: Application
    Filed: December 18, 2020
    Publication date: March 30, 2023
    Applicants: NICHIAS CORPORATION, KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tomoya SHIMIZU, Ayumi TOH, Tsutomu KONNO
  • Publication number: 20230078290
    Abstract: The ion sensor of the present invention is a current measurement type ion sensor that measures a current to measure a target ion, and includes an organic phase retaining layer containing an organic phase capable of forming an interface with the sample containing the target ion, a first electrode to which the organic phase retaining layer is laminated and containing a first insertion material composed of an inorganic compound, a second electrode arranged so as to face the organic phase holding layer and in contact with the sample.
    Type: Application
    Filed: August 25, 2022
    Publication date: March 16, 2023
    Applicants: SYSMEX CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Junko KOJIMA, Kenichi UCHIYAMA, Yumi YOSHIDA
  • Patent number: 11534791
    Abstract: A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: December 27, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11534359
    Abstract: The present invention provides an actuator-equipped knee ankle foot orthosis in which a control device calculates a thigh phase angle based on an angle-related signal detected by a thigh orientation detecting means at one sampling point, applies the thigh phase angle at that sampling point to an assisting force control data, which is stored in the control device in advance and indicates the relationship between the thigh phase angle and a size of the assisting force to be imparted to a lower leg-side brace, to obtain the size of the assisting force to be imparted to the lower leg-side brace at that sampling point, and executes operational control for an actuator unit such that the assisting force having the size is output.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: December 27, 2022
    Assignees: Suncall Corporation, National University Corporation Kyoto Institute of Technology, Kyoto University
    Inventors: Rei Takahashi, Yuichi Sawada, Yoshiyuki Higashi, Tadao Tsuboyama, Noriaki Ichihashi, Koji Ohata, Toshikazu Kawaguchi
  • Patent number: 11529281
    Abstract: A gait motion assisting apparatus of the present invention includes an actuator unit controlling driver so that assisting force calculated by applying gait motion timing based on detected thigh phase angle to output pattern saved data is imparted to lower leg, and a terminal device capable of wireless-communicating with control device of the actuator unit. The terminal device can receive assisting force setting value including assisting force imparting period during gait cycle and create, based on the assisting force setting value, output pattern setting data indicating a relationship between the gait motion timing and a size of assisting force to be imparted to the lower leg. The control device is configured to overwrite-save the output pattern setting data received from the terminal device as the output pattern saved data.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: December 20, 2022
    Assignees: Suncall Corporation, Kyoto University, National University Corporation Kyoto institute of Technology
    Inventors: Rei Takahashi, Yukinobu Makihara, Tadao Tsuboyama, Koji Ohata, Yuichi Sawada, Yoshiyuki Higashi
  • Patent number: 11515146
    Abstract: A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: November 29, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11443944
    Abstract: A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: September 13, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto, Daisuke Tahara
  • Patent number: 11424322
    Abstract: A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: August 23, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11373864
    Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate together with a carrier gas having an oxygen concentration equal to or less than 21 vol % so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms after the epitaxial growth of the oxide film.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: June 28, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11371161
    Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: June 28, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Publication number: 20220127304
    Abstract: Provided is a separating agent that does not have a significantly reduced dynamic binding capacity (DBC) to a target substance even when the separating agent is continually CIP-treated under alkaline pH conditions. The separating agent includes a carrier and a protein, wherein the protein is a given protein, and a surface of the carrier and a lysine residue in the protein are bound by a chemical bond.
    Type: Application
    Filed: July 1, 2019
    Publication date: April 28, 2022
    Applicants: NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY, DAICEL CORPORATION
    Inventors: Yoichi KUMADA, Hiromichi OKURA, Seiichi UCHIMURA
  • Patent number: 11285458
    Abstract: A separating medium for hydrophilic interaction chromatography useful in separating hydrophilic compounds. The hydrophilic interaction chromatography separating medium, which is formed from a support and a ligand carried by the support, is a separating medium wherein the ligand is a (meth)acrylic polymer having a constituent unit derived from the compound indicated by formula (I).
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: March 29, 2022
    Assignees: NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY, DAICEL CORPORATION
    Inventors: Tohru Ikegami, Yusuke Kawachi, Akihiro Kunisawa
  • Patent number: 11280023
    Abstract: A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: March 22, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Daisuke Tahara, Masahiro Yoshimoto
  • Patent number: 11277122
    Abstract: A D-type flip-flop circuit 1 has a structure in which a pMOS transistor p8 and an nMOS transistor n8 are added to a general D-type flip-flop circuit comprising pMOS transistors p1 to p7, p11 to p15 and nMOS transistors n1 to n7, n11 to n15.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 15, 2022
    Assignees: National University Corporation Kyoto Institute of Technology, Dolphin Design
    Inventors: Kazutoshi Kobayashi, Jun Furuta, Kodai Yamada
  • Patent number: 11270882
    Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: March 8, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Daisuke Tahara, Masahiro Yoshimoto
  • Patent number: 11165157
    Abstract: An antenna device includes a ground plate, a patch portion disposed parallel to the ground plate with a particular spacing, a plurality of short circuit portions that electrically connect the patch portion to the ground plate, and a loop portion which is a loop shaped conductor member at a particular spacing from an outer edge portion of the patch portion. The patch portion has an area which forms an electrostatic capacitance that causes parallel resonance with an inductance provided by the short circuit portions at a particular target frequency. The loop portion is formed with a perimeter length which is an integral multiple of the wavelength of radio waves at the target frequency. A feed point is disposed on the loop portion, and current is supplied to the patch portion through the loop portion.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: November 2, 2021
    Assignees: DENSO CORPORATION, SOKEN, INC., National University Corporation Kyoto Institute of Technology
    Inventors: Masakazu Ikeda, Yuji Sugimoto, Hiroaki Kuraoka, Shiro Koide, Tetsuya Ueda, Kohei Enomoto
  • Patent number: 11142842
    Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatus includes a portion configured to be exposed to the mist, and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: October 12, 2021
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Fumiaki Kawai, Hiroyuki Nishinaka, Masahiro Yoshimoto