Abstract: An object of the present invention is to provide a separation agent for separating a human serum-derived IgG polyclonal antibody. This object is achieved by a separation agent for separating a human serum-derived IgG polyclonal antibody, the separation agent including: a carrier; and a single-chain antibody which has a dissociation constant for a human serum-derived IgG polyclonal antibody of not more than 3.0×10?8 M and which binds to the surface of the carrier via a chemical bond.

Abstract: Provided is a separating agent with an improved dynamic binding capacity (DBC) to a target substance. The separating agent includes a carrier and a protein, wherein the protein is a given protein, and a surface of the carrier and added lysine residues in the protein are bound by chemical bonds.

Abstract: Provided is a highly sensitive and less expensive lectin-immobilized base material (for example, a lectin plate), such as lectin-immobilized base material having stable qualities and being able to be sufficiently washed after a target sugar chain-containing antigen binds thereto. Further provided is a method for immobilizing lectin to a base material therefor. Particularly provided are: a method whereby a lectin-peptide fusion, in which a peptide capable of adsorbing to a base material surface such as a polystyrene (PS) tag is fused with the N-terminal side or C-terminal side of lectin capable of recognizing a target sugar chain, is immobilized on the peptide side to a base material; and a lectin-immobilized base material produced by this method. By using the lectin-immobilized base material, a target sugar chain-containing antigen can be highly sensitively and evenly measured and, moreover, target sugar chain-containing cells, etc. can be separated (concentrated and harvested).

Abstract: A photonic crystal laser 10 is a laser that has a configuration, in which a light emitting layer (an active layer 12) that generates light including light of wavelength ?L, and a two-dimensional photonic crystal layer 11 including different refractive index regions (holes 111) disposed two-dimensionally on a plate-like base material 112, the different refractive index regions having a refractive index different from a refractive index of the base material, so that a refractive index distribution is formed, are stacked. Each different refractive index region in the two-dimensional photonic crystal layer 11 is disposed at a position shifted from each lattice point of a basic two-dimensional lattice that has periodicity defined to generate a resonant state of light of the wavelength ?L by forming a two-dimensional standing wave and not to emit light of the wavelength ?L to outside.

Abstract: An antenna device includes a ground plate, a patch section parallel to, and spaced apart from, the ground plate, a first short circuit section having a plurality of first conductive elements that electrically connect the patch section and the ground plate, and a second short circuit section having a plurality of second conductive elements electrically connected at one end to the ground plate. The plurality of first conductive elements are arranged in a circle with a first radius from a patch center point and provide a preset inductance. The plurality of second conductive elements are arranged in a circle with a second radius from the patch center point and provide a preset inductance.

Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate together with a carrier gas having an oxygen concentration equal to or less than 21 vol % so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms after the epitaxial growth of the oxide film.

Abstract: A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.

Abstract: A mist generator may include a reservoir storing a solution, an ultrasonic vibrator configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir, and a mist delivery path configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. A relationship of d?S0.5 may be satisfied, where d is a depth of the solution stored in the reservoir and S is an area of a liquid surface of the solution stored in the reservoir.

Abstract: A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

Abstract: A method of measuring a film thickness is provided. A first semiconductor layer and a second semiconductor layer may be mainly constituted of a same material and may be of a same conductivity type. A film thickness measuring device may be configured such that light emitted from a light source is reflected by a semiconductor substrate fixed to a stage after having been reflected by a half mirror, and the light reflected by the semiconductor substrate passes through the half mirror and enters a photodetector. The light reflected by the semiconductor substrate may include first reflected light reflected by a surface of the second semiconductor layer and second reflected light reflected by an interface between the second semiconductor layer and the first semiconductor layer. A film thickness calculator may calculate the film thickness of the second semiconductor layer based on the light detected by the photodetector.

Abstract: A semiconductor device may include: a gallium oxide substrate including a first side surface constituted of a (100) plane, a second side surface constituted of a plane other than the (100) plane, and an upper surface; and an electrode in contact with the upper surface, in which the gallium oxide substrate may include: a diode interface constituted of a pn interface or a Schottky interface; and an n-type drift region connected to the electrode via the diode interface, and a shortest distance between the first side surface and the diode interface is shorter than a shortest distance between the second side surface and the diode interface.

Abstract: A switching element may include: a gallium oxide substrate constituted of a gallium oxide crystal; and a plurality of gate electrodes facing the gallium oxide substrate via a gate insulating films. An upper surface of the gallium oxide substrate is parallel to a (010) plane of the gallium oxide crystal, and in a plan view of the upper surface of the gallium oxide substrate, a longitudinal direction of each gate electrode intersects a direction along which a (100) plane of the gallium oxide crystal extends.

Abstract: A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.

Abstract: A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.

Abstract: A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatus includes a portion configured to be exposed to the mist, and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride.

Abstract: A film formation apparatus configured to supply mist of a solution to a substrate to epitaxially grow a film on the substrate and including: a furnace housing the substrate; a mist generation tank configured to generate the mist therein; a mist supply path connecting the tank and furnace; a carrier gas supply path configured to supply carrier gas into the tank; a diluent gas supply path configured to supply diluent gas into the mist supply path; and a gas flow rate controller configured to control flow rates of the carrier and diluent gas. The mist in the tank flows to the mist supply path with the carrier gas, the mist in the mist supply path flows to the furnace with the carrier and diluent gas, and the controller is configured to decrease the flow rate of the diluent gas when increasing the flow rate of the carrier gas.

Abstract: This invention provides a life-extending agent comprising at least one member selected from the group consisting of D-proline, D-hydroxyproline, and D-aspartic acid.

Abstract: A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.