Abstract: A hyperspectral optical element for monolithic detectors is provided. In one embodiment, for example a hyperspectral optical element includes a faceplate layer adapted to be mounted on top of a monolithic detector. The faceplate layer comprises a reflective inner surface. A notched layer includes a plurality of notched surfaces and is mounted to the faceplate layer. The notched surfaces oppose the reflective inner surface of the faceplate and define a plurality of variable depth cavities between the reflective inner surface of the faceplate layer and the plurality of notched surfaces of the notched layer. The faceplate layer and the notched layer are substantially transparent to a received signal and the plurality of variable depth cavities provides resonant cavities for one or more wavelengths of the received signal.

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

Abstract: Systems and methods for characterizing an obscurant and imaging a target are disclosed. In one embodiment, a method of imaging a target includes characterizing at least one obscurant present in an environment, and determining, based on the at least one characterized obscurant, one or more of the following: one or more wavelengths corresponding to the at least one obscurant, a polarization state corresponding to the at least one obscurant, and a sensor exposure time corresponding to the at least one obscurant. The method further includes adjusting one or more parameters of an imagining system based at least in part on a characterization of the at least one obscurant.

Abstract: Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.

Abstract: Systems and methods for characterizing an obscurant and imaging a target are disclosed. In one embodiment, a method of imaging a target includes characterizing at least one obscurant present in an environment, and determining, based on the at least one characterized obscurant, one or more of the following: one or more wavelengths corresponding to the at least one obscurant, a polarization state corresponding to the at least one obscurant, and a sensor exposure time corresponding to the at least one obscurant. The method further includes adjusting one or more parameters of an imagining system based at least in part on a characterization of the at least one obscurant.

Abstract: Self-centering electromagnetic transducers, such as linear motors and generators, are disclosed. In one embodiment, an electromagnetic transducer includes an outer yoke made of a ferromagnetic material, and a coil assembly including a plurality of loops of electrically conductive wire, wherein the coil assembly is substantially surrounded by the outer yoke. The electromagnetic transducer further includes a magnet, and an inner yoke made of ferromagnetic material. The magnet is disposed within the outer yoke such that the coil assembly surrounds the magnet. The inner yoke is disposed within the magnet, and the magnet is free to translate. The electromagnetic transducer further includes at least one high-reluctance zone positioned within the outer yoke and/or the inner yoke. In some embodiments, the electromagnetic transducer includes one or more actuators that vary a width of one or more high-reluctance zones to change a spring rate of the electromagnetic transducer.

Abstract: Systems and methods for characterizing an obscurant and imaging a target are disclosed. In one embodiment, a method of imaging a target includes characterizing at least one obscurant present in an environment, and determining, based on the at least one characterized obscurant, one or more of the following: one or more wavelengths corresponding to the at least one obscurant, a polarization state corresponding to the at least one obscurant, and a sensor exposure time corresponding to the at least one obscurant. The method further includes adjusting one or more parameters of an imagining system based at least in part on a characterization of the at least one obscurant.

Abstract: A hyperspectral optical element for monolithic detectors is provided. In one embodiment, for example a hyperspectral optical element includes a faceplate layer adapted to be mounted on top of a monolithic detector. The faceplate layer comprises a reflective inner surface. A notched layer includes a plurality of notched surfaces and is mounted to the faceplate layer. The notched surfaces oppose the reflective inner surface of the faceplate and define a plurality of variable depth cavities between the reflective inner surface of the faceplate layer and the plurality of notched surfaces of the notched layer. The faceplate layer and the notched layer are substantially transparent to a received signal and the plurality of variable depth cavities provides resonant cavities for one or more wavelengths of the received signal.

Abstract: Self-centering electromagnetic transducers, such as linear motors and generators, are disclosed. In one embodiment, an electromagnetic transducer includes an outer yoke made of a ferromagnetic material, and a coil assembly including a plurality of loops of electrically conductive wire, wherein the coil assembly is substantially surrounded by the outer yoke. The electromagnetic transducer further includes a magnet, and an inner yoke made of ferromagnetic material. The magnet is disposed within the outer yoke such that the coil assembly surrounds the magnet. The inner yoke is disposed within the magnet, and the magnet is free to translate. The electromagnetic transducer further includes at least one high-reluctance zone positioned within the outer yoke and/or the inner yoke. In some embodiments, the electromagnetic transducer includes one or more actuators that vary a width of one or more high-reluctance zones to change a spring rate of the electromagnetic transducer.

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

Abstract: Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

Abstract: Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.

Abstract: Panoramic imaging systems and methods for manufacturing and arranging the same are disclosed. A panoramic imaging system includes a mounting frame, an image sensor coupled to the mounting frame, and an optical de-rotation device arranged in an optical path of the image sensor. The optical de-rotation device and the image sensor are oriented such that the optical de-rotation device and the image sensor are in the same plane. The optical de-rotation device removes motion-related blur that would be observed by the image sensor when a rotational movement external to the panoramic imaging system causes the panoramic imaging system to rotate.

Abstract: Panoramic imaging systems including rotatable mirrors are provided. A panoramic imaging system includes a rotatable platform, an imaging device mounted to the rotatable platform, and a mirror rotatably mounted to the rotatable platform. The mirror is positioned in an optical path of the imaging device. The mirror and the imaging device are oriented such that the mirror and imaging device are in the same plane, an optical axis of the imaging device is substantially perpendicular to an axis of rotation of the rotatable platform, and an axis of rotation of the mirror is substantially parallel to the axis of rotation of the rotatable platform when the mirror is in an initial position.

Abstract: An image sensing apparatus includes a focal plane array and a cold shield thermally isolated from the focal plane array. The cryogenic cooling apparatus further includes a first cryocooler assembly comprising a first cold finger thermally coupled to the focal plane array. The first cryocooler assembly is configured to maintain a focal plane array operating temperature. The cryogenic cooling apparatus includes a second cryocooler assembly comprising a second cold finger thermally coupled to the cold shield. The second cryocooler assembly is configured to maintain a cold shield operating temperature that is different from the focal plane array operating temperature.

Abstract: Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP.

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

Abstract: The systems and methods described herein disclose creating an Intensity Based Colormap by interweaving different Hues between two end points (e.g., black and white) with increasing Luminance. An Intensity Based Colormap may be used to convert Computer Input image data using a Computer Machine encoded with an Intensity Based Colormap.