Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.

Abstract: Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP.

Abstract: Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.

Abstract: Self-centering electromagnetic transducers, such as linear motors and generators, are disclosed. In one embodiment, an electromagnetic transducer includes an outer yoke made of a ferromagnetic material, and a coil assembly including a plurality of loops of electrically conductive wire, wherein the coil assembly is substantially surrounded by the outer yoke. The electromagnetic transducer further includes a magnet, and an inner yoke made of ferromagnetic material. The magnet is disposed within the outer yoke such that the coil assembly surrounds the magnet. The inner yoke is disposed within the magnet, and the magnet is free to translate. The electromagnetic transducer further includes at least one high-reluctance zone positioned within the outer yoke and/or the inner yoke. In some embodiments, the electromagnetic transducer includes one or more actuators that vary a width of one or more high-reluctance zones to change a spring rate of the electromagnetic transducer.

Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.

Abstract: The systems and methods described herein disclose creating an Intensity Based Colormap by interweaving different Hues between two end points (e.g., black and white) with increasing Luminance. An Intensity Based Colormap may be used to convert Computer Input image data using a Computer Machine encoded with an Intensity Based Colormap.

Abstract: Included are embodiments for enhanced carrier suppression. One embodiment of a circuit includes a mixer that receives a cover sequence, the cover sequence including transition data from a first signal and a second signal. The mixer may be configured to generate a modulated cover sequence by modulating a radio frequency (RF) carrier with the cover sequence. Some embodiments also include a modulator that is communicatively coupled to the mixer. The modulator may be configured to receive and modulate an altered version of the first signal and an altered version of the second signal. The modulator may additionally receive the modulated cover sequence as an RF carrier input and generate an RF output by modulating the modulated cover sequence with the altered version of the first signal and the altered version of the second signal.

Abstract: An image sensing apparatus includes a focal plane array and a cold shield thermally isolated from the focal plane array. The cryogenic cooling apparatus further includes a first cryocooler assembly comprising a first cold finger thermally coupled to the focal plane array. The first cryocooler assembly is configured to maintain a focal plane array operating temperature. The cryogenic cooling apparatus includes a second cryocooler assembly comprising a second cold finger thermally coupled to the cold shield. The second cryocooler assembly is configured to maintain a cold shield operating temperature that is different from the focal plane array operating temperature.

Abstract: A multi-channel imaging device is provided. The multi-channel imaging device comprises a focal plane array comprising an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also comprises a lens array comprising a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells comprising at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: Panoramic imaging systems including rotatable minors are provided. A panoramic imaging system includes a rotatable platform, an imaging device mounted to the rotatable platform, and a minor rotatably mounted to the rotatable platform. The mirror is positioned in an optical path of the imaging device. The mirror and the imaging device are oriented such that the minor and imaging device are in the same plane, an optical axis of the imaging device is substantially perpendicular to an axis of rotation of the rotatable platform, and an axis of rotation of the minor is substantially parallel to the axis of rotation of the rotatable platform when the mirror is in an initial position.

Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.

Abstract: Included are embodiments for enhanced carrier suppression. One embodiment of a circuit includes a mixer that receives a cover sequence, the cover sequence including transition data from a first signal and a second signal. The mixer may be configured to generate a modulated cover sequence by modulating a radio frequency (RF) carrier with the cover sequence. Some embodiments also include a modulator that is communicatively coupled to the mixer. The modulator may be configured to receive and modulate an altered version of the first signal and an altered version of the second signal. The modulator may additionally receive the modulated cover sequence as an RF carrier input and generate an RF output by modulating the modulated cover sequence with the altered version of the first signal and the altered version of the second signal.

Abstract: A multi-channel imaging device is provided. The multi-channel imaging device comprises a focal plane array comprising an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also comprises a lens array comprising a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells comprising at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: A multi-channel imaging device is provided. The multi-channel imaging device includes a focal plane array having an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also includes a lens array having a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells having at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: According to one embodiment, an infrared focal plane comprises an array of pixels configured to detect optical radiation in a predetermined radiation band are positioned on a support substrate. The pixels are connected to pixel contacts on a read-out integrated circuit via pixel interconnects comprising bonding bumps. According to some embodiments, indium migration is blocked by a patterned electrical insulator comprising a plurality of intersecting walls defining a plurality of cells that surround each pixel interconnect. The patterned electrical insulator may be dimensioned such that it does not physically contact the support substrate, the array of pixels or pixel interconnects. In this manner, pixel-pair defects due to indium migration resulting from cryogenic thermal-cycling may be prevented, thereby extending the thermal-cycling lifetime of the focal plane array.

Abstract: A multi-channel imaging device is provided. The multi-channel imaging device includes a focal plane array having an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also includes a lens array having a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells having at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.