Abstract: A method for treating high aspect ratio (HAR) structures arranged on a surface of a substrate includes a) spin rinsing the surface of the substrate using a first rinsing liquid; b) spinning off the first rinsing liquid from the surface of the substrate; and c) directing a gas mixture containing hydrogen fluoride onto the surface of the substrate after the first rinsing liquid is dispensed.

Abstract: A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Abstract: The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.

Abstract: A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck and a heating assembly that faces a wafer-shaped article when positioned on the rotary chuck. A liquid dispenser positioned so as to dispense liquid onto a surface of a wafer-shaped article that faces away from the rotary chuck when positioned on the rotary chuck. The heating assembly comprises an array of radiant heating elements distributed among at least five individually controllable groups. The liquid dispenser comprises one or more dispensing orifices configured to move a discharge point from a more central region of the rotary chuck to a more peripheral region of the rotary chuck. A controller controls power supplied to each of the at least five individually controllable groups of radiant heating elements based on a position of the discharge point of the liquid dispenser.

Abstract: A substrate processing system to treat a substrate includes a spin chuck configured to hold and rotate a substrate. A heating assembly is configured to heat an opposite surface of the substrate and includes a main heater assembly and a nozzle stack cap. The main heater assembly includes a first plurality of light emitting diodes (LEDs) arranged on a first printed circuit board (PCB) in a first plane that is spaced from and parallel to a second plane including the substrate. The nozzle stack cap assembly includes at least one nozzle to dispense liquid onto a center of a first surface of the substrate. A radiant heat source is arranged closer to the substrate than the first plane and is configured to heat the center of the first surface of the substrate.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (VUV) assembly is arranged adjacent to the substrate and includes a housing and a VUV lamp that is connected to the housing and that generates and directs ultraviolet (UV) light at the substrate. A movement device is configured to move at least one of the VUV assembly and the substrate support during exposure of the substrate to the UV light to reduce surface and embedded charge in the substrate.

Abstract: A method for drying wafer-shaped articles comprises rotating a wafer-shaped article of a predetermined diameter on a rotary chuck, and dispensing a drying liquid onto one side of the wafer-shaped article. The drying liquid comprises greater than 50 mass % of an organic solvent. During at least part of the dispensing step, the wafer-shaped article is heated with a heating assembly. During at least part of the dispensing step a fluorine-containing compound is present in the drying liquid or in a gas that surrounds the drying liquid as the drying liquid contacts the wafer-shaped article.

Abstract: A device for removing liquid from a surface of a disc-like article comprises a spin chuck for holding and rotating a single disc-like article about an axis of rotation and a liquid dispenser for dispensing liquid onto the disc-like article. A first gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article, and a second gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article. A rotary arm moves the liquid dispenser and the second gas dispenser across the disc-like article so that the second gas dispenser and the liquid dispenser move to a point in a peripheral region of the spin chuck. The at least one nozzle of the second gas dispenser is elongated along a first horizontal line that defines an angle ? of 5-20° relative to a second horizontal line connecting the center of the second gas dispenser and the rotation axis of the rotary arm.

Abstract: An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer-shaped article of a predetermined diameter thereon. A radiant heating plate faces a wafer-shaped article when positioned on the rotary chuck. The radiant heating plate includes radiant heating elements, but a central region of the radiant heating plate is free of radiant heating elements. The radiant heating plate further includes at least one refraction element that refracts radiation emitted by the radiant heating elements and passed through the at least one refraction element, toward the central region of the radiant heating plate.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber. The closed process chamber comprises a housing providing a gas-tight enclosure, a rotary chuck located within the closed process chamber and adapted to hold a wafer shaped article thereon, and an interior cover disposed within said closed process chamber. The interior cover is movable between a first position in which the rotary chuck communicates with an outer wall of the closed process chamber, and a second position in which the interior cover seals against an inner surface of the closed process chamber adjacent the rotary chuck to define a gas-tight inner process chamber.

Abstract: An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.

Abstract: An apparatus for processing wafer-shaped articles comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, and a rotating shower head for supplying process gas to a surface of a wafer-shaped article when held by the spin chuck. The rotating shower head comprises an outlet plate having plural openings formed in each of a central and a peripheral region thereof. A process gas feed is provided so as to supply process gas to a gas distribution chamber. The gas distribution chamber is in fluid communication with a plurality of openings formed in the shower head.

Abstract: A collector assembly for use with a spin chuck includes a base component, a top component and a first intermediate component configured to be fitted between the base component and the top component. The base, top and first intermediate components are configured so as to be interconnectable to form a process enclosure and so as to be separable from one another. The base component and the intermediate component each comprise collector wall segments such that when the base, top and first intermediate components are interfitted, the wall segments together define an outer side wall of the collector assembly.

Abstract: A liquid mixture for etching a substrate includes a first liquid comprising one of: (i) percarboxylic acid comprising 3 to 70 mass. % of the liquid mixture; or (ii) carboxylic acid comprising 3 to 70 mass. % of the liquid mixture and at least one liquid selected from a group consisting of hydrogen peroxide comprising 3 to 30 mass. % of the liquid mixture and ozone comprising 0.5 to 5 mass. % of the liquid mixture; a water drawing agent comprising 2 to 40 mass. % of the liquid mixture; hydrofluoric acid comprising 0.05 to 3 mass. % of the liquid mixture; and water comprising 0 to 60 mass. % of the liquid mixture. The liquid mixture may be used to etch silicon germanium relative to silicon, silicon dioxide and silicon nitride.

Abstract: An apparatus for processing wafer-shaped articles comprises a rotary chuck adapted to hold a wafer shaped article thereon. The rotary chuck comprises a peripheral series of pins configured to contact an edge region of a wafer-shaped article. Each of the pins projects from the rotary chuck, and each of the pins comprises a projecting portion having a gripping element at a distal end thereof, and a proximal portion comprising a drive mechanism at a proximal end thereof by which the pin can be rotated. The projecting portion and the proximal portion comprise interengageable connectors configured to allow the projecting and proximal portions to be interconnected by pressing the projecting portion against the proximal portion and to be disconnected by pulling the projecting portion away from the proximal portion.