Abstract: A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Abstract: A spin chuck for holding semiconductor wafers includes one or more damping mechanisms to limit the force with which chuck pins impact the wafer edge following wafer shift. The damping mechanism may be a linear or rotary dashpot. The dashpot or dashpots are mounted on a surface of the chuck body and include a control arm that contacts a common gear ring that in turn drives the chuck pins during radially inward and outward movement.

Abstract: A device for removing liquid from a surface of a disc-like article comprises a spin chuck for holding and rotating a single disc-like article about an axis of rotation and a liquid dispenser for dispensing liquid onto the disc-like article. A first gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article, and a second gas dispenser comprises at least one nozzle with at least one orifice for blowing gas onto the disc-like article. A rotary arm moves the liquid dispenser and the second gas dispenser across the disc-like article so that the second gas dispenser and the liquid dispenser move to a point in a peripheral region of the spin chuck. The at least one nozzle of the second gas dispenser is elongated along a first horizontal line that defines an angle ? of 5-20° relative to a second horizontal line connecting the center of the second gas dispenser and the rotation axis of the rotary arm.

Abstract: An apparatus for processing wafer-shaped articles comprises a spin chuck adapted to hold and spin a wafer-shaped article of a predetermined diameter during a processing operation. A liquid collector surrounds the spin chuck, and comprises a first inner surface. The first inner surface comprises a first conductive material. The collector further comprises a first conductive pathway for grounding the first conductive material.

Abstract: A method and device for processing wafer-shaped articles includes a spin chuck for holding and rotating a wafer-shaped article about a rotation axis, and at least one dispenser for dispensing a fluid onto at least one surface of a wafer-shaped article. A collector surrounds the spin chuck for collecting process fluids, with at least two collector levels for separately collecting fluids in different collector levels. Each collector level comprises an exhaust gas collecting chamber leading to a respective exhaust gas conduit. At least one of the exhaust gas conduits comprises a valve mechanism that reciprocally restricts exhaust gas flow from its associated exhaust gas conduit while opening the exhaust gas conduit to an ambient environment outside the collector, and vice-versa.

Abstract: In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.

Abstract: In a method and apparatus for treating a surface of an article, an improved rinse liquid prevents build-up of static charge while avoiding damages to certain types of exposed metal-containing surfaces. In one embodiment, a semiconductor wafer having structures including at least one of cobalt, nickel and platinum is rotated on a spin chuck, as a rinse liquid is dispensed onto a surface of the wafer. The rinse liquid is a dilute aqueous solution of a base of the formula in which R1, R2 and R3 are each independently selected from hydrogen and C1-4 alkyl. The base has a boiling point less than 100° C., and the rinse liquid has a pH in the range of 8 to 10.

Abstract: An apparatus for conditioning a process liquid comprises a tank incorporating a heat transfer device for heating or cooling a process liquid in the tank. A filtration unit is mounted within the tank for filtering the process liquid in the tank. A pump is mounted adjacent the tank and in fluid communication with process liquid in the tank. The pump causes process liquid to circulate between the filtration unit and the heat transfer device.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, at least one upper nozzle for dispensing a treatment fluid onto an upwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and at least one lower nozzle arm comprising a series of lower nozzles extending from a central region of the spin chuck to a peripheral region of the spin chuck. The series of nozzles comprises a smaller nozzle in a central region of the spin chuck and a larger nozzle in a peripheral region of the spin chuck. In the method according to the invention, a heated liquid is supplied through the series of nozzles so as to supply more heat to peripheral regions of a wafer than to central regions.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, the rotary chuck being adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, the lid comprising an upper plate formed from a composite fiber-reinforced material and a lower plate that faces into the process chamber and is formed from a chemically-resistant plastic.

Abstract: An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber. The lid comprises an annular chamber, gas inlets communicating with the annular chamber and opening on a surface of the lid facing outwardly of the closed process chamber, and gas outlets communicating with the annular chamber and opening on a surface of the lid facing inwardly of the closed process chamber.

Abstract: An apparatus for processing wafer-shaped articles, comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, and is adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, and comprises a lower surface facing inwardly of the chamber. At least one heating element heats the lower surface of the lid to a desired temperature, so as to prevent condensation of process vapour on the inwardly facing surface of the lid.

Abstract: In an apparatus and method for treating a wafer-shaped article, a spin chuck is provided for holding and rotating a wafer-shaped article. A first liquid dispenser communicates with a supply of an organic liquid and is positioned so as to dispense the organic liquid onto a surface of a wafer-shaped article. A degasifying unit is positioned upstream of the first liquid dispenser and downstream of the supply. The degasifying unit is configured to reduce a dissolved gas content of the organic liquid to less than 20% of a saturation concentration at a pressure of 1 bar.

Abstract: A cleaning fluid including dispersed gas avoids using ultrasonic energy to induce cavitation by subjecting a liquid containing dissolved gas to a pressure reduction in a bubble machine, to generate a gas/liquid dispersion. The cleaning fluid can be used to clean articles such as semiconductor wafers using a device that includes a holder and a vibrator for supplying ultrasonic or megasonic energy to the article.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, at least one upper nozzle for dispensing a treatment fluid onto an upwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and at least one lower nozzle arm comprising a series of lower nozzles extending from a central region of the spin chuck to a peripheral region of the spin chuck. The series of nozzles comprises a smaller nozzle in a central region of the spin chuck and a larger nozzle in a peripheral region of the spin chuck. In the method according to the invention, a heated liquid is supplied through the series of nozzles so as to supply more heat to peripheral regions of a wafer than to central regions.

Abstract: A device for fluid treatment of a plate-like article includes a rotary head for holding and rotating a plate-like article around a substantially vertical rotation axis drive elements to suspend and drive the rotary head without contact, the elements to suspend and drive the rotary head being arranged radially around the rotary head a substantially cylindrical sidewall, which is substantially concentric to the rotation axis, wherein the cylindrical sidewall is arranged between the rotary head and the drive elements and is introduced in the gap between the rotary head and the drive elements elevating members for lifting and lowering the rotary head and the wall relative to each other.

Abstract: A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring.

Abstract: In a spin-chuck with plural collector levels, a separate exhaust controller is provided for each level. This permits selectively varying gas flow conditions among the collector levels, so that the ambient pressure at one level does not adversely affect device performance in an adjacent level.

Abstract: A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck. Liquid supply nozzles open on the surface of the spin chuck facing a first side of the plate-like article and positioned radially outwardly of the gas supply nozzles. The liquid supply nozzles are positioned beneath a peripheral region of a plate-like article positioned on the spin chuck.

Abstract: A method for wet treatment of plate-like articles includes, a chuck for holding a single plate-like article having an upwardly facing surface for receiving liquid running off a plate-like article when being treated with liquid, wherein the chuck is outwardly bordered by a circumferential annular lip. The chuck has an outer diameter greater than the greatest diameter of the plate-like article to be treated, and a rotatable part with an upwardly facing ring-shaped surface for receiving liquid running off the circumferential lip of the chuck. The rotatable part is rotatable with respect to the chuck, the ring-shaped surface is coaxially arranged with respect to the circumferential annular lip, the inner diameter of the ring-shaped surface is smaller than the outer diameter of the chuck, and the distance d between the lip and the upwardly facing ring-shaped surface is in a range from 0.1 mm to 5 mm.