Abstract: A plasma generating system generates plasma in a processing chamber. A controller is configured to: a) perform atomic layer deposition (ALD) N times to deposit film in a feature of the substrate; b) after performing a) M of the N times, supply an inhibitor plasma gas to the processing chamber and strike plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition in the upper portions of the feature as compared to the lower portions of the feature; c) supply an etch gas to the processing chamber to etch the film more in the upper portions of the feature than in the lower portions in the feature of the substrate following b); and d) repeat a) to c) one or more times to gapfill the feature without voids.

Abstract: A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

Abstract: A substrate processing system includes a laser triangulation sensor configured to transmit and receive light through a window of an exterior wall of a substrate processing chamber. A controller is configured to: position the laser triangulation sensor such that the laser triangulation sensor transmits light onto a measurement feature arranged between a first surface of a substrate support and a second surface of a gas distribution device, where the second surface faces the first surface; and while the laser triangulation sensor transmits light onto the measurement feature, determine a first distance between the first and second surfaces based on a difference between: a second distance between the laser triangulation sensor and the first surface measured using the laser triangulation sensor; and a third distance between the laser triangulation sensor and the second surface measured using the laser triangulation sensor.

Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, formation of spacers involves deposition of a tin oxide layer on a semiconductor substrate having multiple protruding features. The deposition is performed in a deposition apparatus having a controller with program instructions configured to cause sequential contacting of the semiconductor substrate with a tin-containing precursor and an oxygen-containing precursor such as to coat the semiconductor substrate having the protruding features with a tin oxide layer. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the semiconductor substrate.

Abstract: A method of plasma-assisted semiconductor processing in multiple stations in a process chamber is provided. The method comprises: a) providing substrates at each of the multiple stations; b) distributing RF power to multiple stations to thereby generate a plasma in the station, wherein the RF power is distributed according to a RF power parameter that is adjusted to reduce station to station variations; c) tuning a frequency of the RF power, wherein tuning the frequency includes: i) measuring a current of the plasma; ii) determining, according to the current measured in (i), a change to the frequency of the RF power, and iii) adjusting the frequency of the RF power; and d) performing a semiconductor processing operation on the substrate at each station.

Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.

Abstract: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

Abstract: A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes performing a first etching step to etch the substrate to form features on the substrate, remove portions of the carbon film, and decrease the first thickness of the carbon film, selectively depositing carbon onto remaining portions of the carbon film, and performing at least one second etching step to etch the substrate to complete the forming of the features on the substrate.

Abstract: A voltage transient detector includes circuitry for transmitting electrical current through a light emitting diode and a fuse that is serially connected between the light emitting diode and a reference potential, such that the light emitting diode is illuminated when the fuse is not blown. The voltage transient detector also includes circuitry for transmitting a controlled amount of electrical current through the fuse in conjunction with an occurrence of a voltage transient at a voltage measurement location, where the voltage transient exceeds a set transient threshold voltage. The controlled amount of electrical current transmitted through the fuse causing the fuse to blow and the light emitting diode to turn off, thereby indicating occurrence of the voltage transient at the voltage measurement location.

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

Abstract: A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

Abstract: Some examples provide a vacuum wafer chuck assembly for supporting a wafer. An example chuck assembly comprises a chuck hub and a centering hub disposed within the chuck hub. Chuck arms are mounted to the chuck hub, with each chuck arm extending radially between a proximal end adjacent the chuck hub, and a distal end remote therefrom. At least one vacuum pad is provided for supporting the wafer during a wafer centering or wafer processing operation. A vacuum sensor detects a presence or absence of a vacuum pressure at the vacuum pad during the wafer centering or processing operation, a detection indicative of a presence or absence of the wafer in the chuck assembly, or a presence of a defective wafer.

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

Abstract: Semiconductor processing tools are provided that include a support framework, semiconductor processing chambers arranged along an axis, an attachment point connected to the support framework, and a detachable hoist system. Each chamber includes a base portion fixedly mounted relative to the support framework and a removable top cover including one or more hoisting features. The detachable hoist system includes a vertical member including a top end including a complementary attachment point and a bottom end including a movement mechanism supported by a floor. The complementary attachment point is detachably connected to the attachment point. The detachable hoist system further includes a hoist arm connected to the vertical member. The hoist arm is configured to pivot about a vertical axis substantially perpendicular to the axis, and includes one or more links and a hoist feature engagement interface configured to engage with the hoisting features of any of the removable top covers.

Abstract: A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.

Abstract: Patterned magnetoresistive random access memory (MRAM) stacks are formed by performing a main etch through a plurality of MRAM layers disposed on a substrate, where the main etch includes using ion beam etching (IBE). After the main etch, gapfill dielectric material is deposited in spaces between the patterned MRAM stacks, and the gapfill dielectric material is selectively etched or otherwise formed to an etch depth that is above a depth of an underlayer. After the gapfill dielectric material is formed, at least some of the gapfill dielectric material and any electrically conductive materials deposited on sidewalls of the patterned MRAM stacks are removed by performing an IBE trim etch.

Abstract: A method of etching features in a stack comprising a dielectric material on a substrate is provided. In a step (a) an etch plasma is generated from an etch gas, exposing the stack to the etch plasma, and partially etching features in the stack. In a step (b) after step (a) an atomic layer deposition process is provided to deposit a protective film on sidewalls. The atomic layer deposition process comprises a plurality of cycles, wherein each cycle comprises exposing the stack to a first reactant gas comprising WF6, wherein the first reactant gas is adsorbed onto the stack and exposing the stack to a plasma formed from a second reactant gas, wherein the plasma formed from the second reactant gas reacts with the adsorbed first reactant gas to form the protective film over the stack. In a step (c) steps (a)-(b) are repeated at least one time.

Abstract: Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.