Abstract: An alignment device is provided to draw two components together in an aligned configuration. An example alignment device comprises a planetary gear set including a ring gear and at least two planetary gears and one or more side plates for supporting the gears. Each of the planetary gears includes an aperture sized to receive a threaded fastener for engagement with a respective threaded rod that is engaged with one of the two components, wherein rotation of the ring gear imparts rotational movement to the threaded fasteners to cause synchronized advancement of the alignment device along the threaded rods.

Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

Abstract: Systems and methods of the disclosure perform in situ sensing and real time compensation of various non-uniformities in substrate processing systems. A plasma non-uniformity is sensed by determining a temperature distribution across a matrix of a plurality of micro-heaters disposed in the substrate support. Alternatively, the plasma non-uniformity is sensed by determining heat flux through the substrate support using the matrix heaters and one or more heaters used to heat one or more zones of the substrate support. The plasma non-uniformity is compensated by adjusting one or more parameters such as power supplied to the matrix heaters, RF power supplied to generate plasma, chemistry and/or flow rate of gas or gases used to generate plasma, settings of thermal control units or chillers, and so on. Additionally, non-uniformities inherent in the substrate support are sensed using the zone and matrix heaters and are compensated by adjusting the one or more parameters.

Abstract: A ring storage station used for delivering a consumable part to a substrate processing system includes a housing that includes a base plate and a rotating plate disposed over the base plate. An end-effector opening is disposed at a first side of the housing and a service window opening is disposed at a second side of the housing. A set of finger support structures is connected to the rotating plate. Each finger support structure includes a support column and support fingers disposed thereon. At least two of the set of columns have support fingers with index pins to radially align consumable parts when disposed in the ring storage station. In one configuration, consumable parts may be designed to match the rotation angle engagement to ensure catching the angle alignment between ring storage and process module.

Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

Abstract: In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

Abstract: An apparatus and method for performing closed-loop multiple-output control of radio frequency (RF) matching for a semiconductor wafer fabrication process is provided. An apparatus for providing signals to a station of a process chamber performs semiconductor fabrication processes. A plurality of signal generators generates signals having first and second frequencies. A measurement circuit measures a voltage standing wave ratio (VSWR). A match reflection optimizer has a reactive component configured to be adjusted responsive to an output signal from the measurement circuit.

Abstract: An auto bit check feature for pneumatic valve verification as coupled with a gas line that may be coupled with a semiconductor device process chamber. The gas line can be charged to keep a connected valve closed, where activation of a solenoid forces the gas to bleed out and open the valve. The pneumatic gas line may be is purged to keep a connected valve closed, where activation of the solenoid forces gas to flow in the line and apply a pressure to open the valve. One or more airlines may be coupled between solenoid and the valve, depending on the type of solenoid and/or valve. Described is a method to auto verify that a valve is correctly connected to a specific solenoid in a pneumatic bank. The method can enable verification that a particular solenoid opens a desired valve.

Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.

Abstract: An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.

Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10?6/K. A metal oxide layer is then disposed over a surface of the component body.

Abstract: A method for fabricating a plurality of resistive random access memory (RRAM) cells includes providing a substrate including a memory medium arranged on an underlying layer; creating channel holes in the memory medium having a first critical dimension in a range from 1 nm to 20 nm; depositing switching material defining a filament of the RRAM cells in the channel holes; depositing a top electrode of the RRAM cells on the memory medium and the switching material; and separating adjacent ones of the RRAM cells by etching the top electrode and the memory medium between adjacent ones of the channel holes.

Abstract: A measurement system to measure at least one of a height and a thickness of an edge ring in a plasma processing chamber includes an ultrasound transducer configured to output an ultrasound signal into the edge ring and to receive a reflected signal from the edge ring. A controller is configured to cause the ultrasound transducer to generate the ultrasound signal and to determine a thickness of the edge ring based on timing of the ultrasound signal and the reflected signal.

Abstract: A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed.

Abstract: Provided herein are methods and systems for reducing roughness of EUV resists and improving etched features. The methods may involve depositing a thin film on a patterned EUV resist having a stress level that is less compressive than a stress level of the patterned EUV resist. The resulting composite stress may reduce buckling and/or bulging of the patterned EUV resist.

Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.