Patents Assigned to Lam Research
  • Patent number: 6786175
    Abstract: An electrode assembly of a semiconductor processing chamber wherein heat transfer between a backing plate and a showerhead electrode is improved by an electrostatic clamping arrangement, which includes a compliant material in contact with a surface of the showerhead electrode. The showerhead electrode is removably attached to the backing plate by a mechanical clamping arrangement which engages an outer periphery of the showerhead electrode. The electrostatic clamping arrangement is coextensive with the showerhead electrode to improve thermal conduction between the backing plate and the showerhead electrode.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: September 7, 2004
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Eric Lenz
  • Publication number: 20040171260
    Abstract: A method for etching a layer through a photoresist mask with an ARC layer between the layer to be etched and the photoresist mask over a substrate is provided. The substrate is placed into a processing chamber. An ARC open gas mixture is provided into the processing chamber. The ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO and CH3F. An ARC open plasma is formed from the ARC open gas mixture. The ARC layer is etched with the ARC open plasma until the ARC layer is opened. The ARC open gas mixture stopped before the layer to be etched is completely etched.
    Type: Application
    Filed: March 10, 2004
    Publication date: September 2, 2004
    Applicant: Lam Research Corporation
    Inventors: Youngjin Choi, Helen H. Zhu, Sangheon Lee, Sean S. Kang
  • Publication number: 20040168706
    Abstract: A method for applying acoustic energy to clean a surface of a substrate is provided. The method initiates with generating acoustic energy oriented in a substantially parallel direction to a surface of a semiconductor substrate from a first transducer. Then, a direction of the acoustic energy from the first transducer is altered to a substantially perpendicular direction relative to the surface of the semiconductor substrate. Next, acoustic energy oriented in the substantially parallel direction to the surface of the semiconductor substrate is generated from a second transducer. In one embodiment, an orientation of the reflective surface is modifiable so that the acoustic energy may be delivered at a number of angles relative to the substrate surface. A system for cleaning a substrate and an apparatus are also provided.
    Type: Application
    Filed: February 28, 2003
    Publication date: September 2, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John M. Boyd, Fred C. Redeker, Randolph E. Treur, William Thie
  • Publication number: 20040166782
    Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
    Type: Application
    Filed: February 3, 2004
    Publication date: August 26, 2004
    Applicant: Lam Research Corporation.
    Inventors: John M. Boyd, Yehiel Gotkis, Rod Kistler
  • Publication number: 20040165177
    Abstract: A system and method for detecting an endpoint is disclosed that includes illuminating a first portion of a surface of a wafer with a first broad beam of light. A first reflected spectrum data is received. The first reflected spectrum of data corresponds to a first spectra of light reflected from the first illuminated portion of the surface of the wafer. A second portion of the surface of the wafer with a second broad beam of light. A second reflected spectrum data is received. The second reflected spectrum of data corresponds to a second spectra of light reflected from the second illuminated portion of the surface of the wafer. The first reflected spectrum data is normalized and the second reflected spectrum data is normalized. An endpoint is determined based on a difference between the normalized first spectrum data and the normalized second spectrum data.
    Type: Application
    Filed: November 24, 2003
    Publication date: August 26, 2004
    Applicant: LAM RESEARCH
    Inventors: Vladimir Katz, Bella Mitchell
  • Publication number: 20040166771
    Abstract: CMP methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced.
    Type: Application
    Filed: February 26, 2004
    Publication date: August 26, 2004
    Applicant: LAM Research Corporation
    Inventor: Miguel Angel Saldana
  • Publication number: 20040163682
    Abstract: A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided. Additionally, a method and a system for electroless plating are provided.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 26, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John M. Boyd, Michael Ravkin, Fred C. Redeker
  • Patent number: 6781393
    Abstract: A wafer integrated plasma diagnostic method for a semiconductor wafer processing system provides a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is located in the center and eight more plasma probe assemblies are located at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. Method operations provide at each location and in each of the plasma probe assemblies, six possible probe elements having a relative geometrical area such that the assemblies may make simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.
    Type: Grant
    Filed: October 6, 2003
    Date of Patent: August 24, 2004
    Assignee: Lam Research Corporation
    Inventor: Neil Benjamin
  • Patent number: 6780787
    Abstract: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: August 24, 2004
    Assignee: Lam Research Corporation
    Inventor: Robert J. O'Donnell
  • Patent number: 6780569
    Abstract: A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: August 24, 2004
    Assignee: Lam Research Corporation
    Inventors: Eric Hudson, Reza Sadjadi, Daxing Ren, Wan-Lin Chen, Douglas Keil, Peter Cirigliano
  • Publication number: 20040161939
    Abstract: An apparatus for applying a wafer to a polishing belt during a CMP operation includes a spindle having an upper end and a lower end. A wafer carrier is coupled to the lower end of the spindle. A linear force generator is disposed at the upper end of the spindle. A load cell is positioned between the linear force generator and the upper end of the spindle. A controller is coupled to the load cell for controlling the force applied by the linear force generator. A method for applying downward force on a wafer during CMP also is described.
    Type: Application
    Filed: February 10, 2004
    Publication date: August 19, 2004
    Applicant: Lam Research Corporation
    Inventors: Anthony de la Llera, Xuyen Pham, Andrew Siu, Tuan A. Nguyen, Tony Luong
  • Patent number: 6776851
    Abstract: A method for removing chamber deposits in between process operations in a semiconductor process chamber is provided. The method initiates with depositing a fluorine containing polymer layer over an inner surface of a semiconductor process chamber where the semiconductor chamber is empty. Then, a wafer is introduced into the semiconductor process chamber after depositing the fluorine containing polymer layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the fluorine containing polymer layer covering the inner surface of the semiconductor process chamber. Then, the wafer is removed from the semiconductor process chamber. Next, an oxygen based cleaning operation is performed. The oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. An apparatus configured to remove chamber deposits between process operations is also provided.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: August 17, 2004
    Assignee: Lam Research Corporation
    Inventors: Harmeet Singh, John E. Daugherty, Vahid Vahedi, Saurabh J. Ullal
  • Patent number: 6777344
    Abstract: Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.
    Type: Grant
    Filed: February 12, 2001
    Date of Patent: August 17, 2004
    Assignee: Lam Research Corporation
    Inventors: Rao V. Annapragada, Ian J. Morey, Chok W. Ho
  • Patent number: 6776695
    Abstract: An invention is disclosed for improving edge performance in a chemical mechanical polishing process is disclosed. The system includes a wafer head disposed above a wafer, where the wafer head includes a first active retaining ring capable of extension and retraction. Below the wafer head is a polishing belt, and disposed below the polishing belt is a platen having a second active retaining ring capable of extension and retraction. During operation the first active retaining ring and the second active retaining ring can be controlled to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: August 17, 2004
    Assignee: Lam Research Corporation
    Inventors: Alek Owczarz, John Boyd, Rod Kistler
  • Patent number: 6777173
    Abstract: H2O vapor is used as a processing gas for stripping photoresist material from a substrate having a patterned photoresist layer previously used as an ion implantation mask, wherein the patterned photoresist layer is defined by a photoresist crust covering a bulk photoresist portion. Broadly speaking, the H2O vapor is demonstrated to more efficiently strip the photoresist material having a cross-linked photoresist crust without causing the photoresist crust to pop and without causing the bulk photoresist to be undercut. Thus, H2O vapor provides a safe, efficient, and economical processing gas for stripping photoresist material having a photoresist crust resulting from an ion implantation process.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: August 17, 2004
    Assignee: LAM Research Corporation
    Inventors: Anthony Chen, Gladys So-Wan Lo
  • Publication number: 20040154747
    Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.
    Type: Application
    Filed: February 3, 2004
    Publication date: August 12, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Tuqiang Ni, Wenli Collison, David Hemker, Lumin Li
  • Publication number: 20040155012
    Abstract: A method for substantially reducing photoresist wiggling while etching a layer on a substrate is provided. The substrate having thereon the layer disposed below a photoresist mask is introduced into the plasma processing chamber. An etchant source gas mixture is flowed into the plasma processing chamber, where the etchant source gas mixture comprises xenon and an active etchant, where a flow rate of the xenon is at least 35% of etchant source gas mixture. A plasma is struck from the etchant source gas mixture. The layer is etched with the plasma, where the flow rate of xenon reduces photoresist wiggling.
    Type: Application
    Filed: February 12, 2003
    Publication date: August 12, 2004
    Applicant: Lam Research Corporation
    Inventors: Camelia Rusu, Mukund Srinivasan
  • Publication number: 20040157531
    Abstract: An apparatus is provided for polishing a substrate. The apparatus includes a polishing pad configured to traverse from at least a first point to a second point. A first sensor is located near the first point and oriented so as to sense an incoming temperature of the polishing pad. A second sensor is located near the second point and oriented so as to sense an outgoing temperature of the polishing pad. A difference between the incoming temperature and the outgoing temperature is then used to determine endpoint of a polishing operation.
    Type: Application
    Filed: December 30, 2003
    Publication date: August 12, 2004
    Applicant: Lam Research Corporation
    Inventors: Katrina A. Mikhaylich, Mike Ravkin, Yehiel Gotkis
  • Publication number: 20040154637
    Abstract: A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.
    Type: Application
    Filed: February 6, 2003
    Publication date: August 12, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John Boyd, Andras Kuthi, Michael G. R. Smith, Thomas W. Anderson, William Thie
  • Publication number: 20040157348
    Abstract: A system and method of generating RF includes a supply voltage source, an oscillator, an output amplifier, a load network, a peak voltage detector and a comparator circuit. The oscillator has a control signal input and an RF signal output. The output amplifier is coupled to the oscillator output. The load network is coupled between an output of the output amplifier and an output of the RF generator. The peak voltage detector is coupled across the output amplifier. The comparator circuit includes a first input coupled to the supply voltage source, a second input coupled to an output of the peak voltage detector, and a comparator output coupled to the oscillator control signal input.
    Type: Application
    Filed: February 6, 2003
    Publication date: August 12, 2004
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Thomas W. Anderson, Andras Kuthi