Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.

Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.

Abstract: The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Abstract: A plasma processing system for processing a substrate is disclosed. The system includes a process component capable of effecting a plasma inside a process chamber. The system also includes a gear drive assembly for moving the process component in a linear direction during processing of the substrate.

Abstract: An invention is provided for removing a top wafer layer during a CMP process. Time series data is collected based on a reflected wavelength from a top layer of a wafer. A Fourier Transform is applied to the time series data, and a frequency of peak intensities in the Fourier Transform of the time series data is analyzed to determine a peak magnitude in the frequency. A first removal rate of the top layer is determined based on the peak magnitude in the frequency, and a current thickness of top layer is calculated based on the first removal rate. The CMP process is discontinued when the current thickness of the top layer is equal to or less than a target thickness, and a separate polishing process is performed to remove an additional portion of the top layer. In one aspect, the separate polishing process can be based on a soft endpoint detection process having second removal rate that is lower than the first removal rate.

Abstract: A belt wiper that can be used in a linear belt-type chemical mechanical planarization (CMP) system to maintain a belt pad is provided. The belt wiper mitigates disturbances within a detection region important to a belt pad steering system. Also, the belt wiper mitigates the obscuring of optical components important to operation of an endpoint detection system. Thus, the belt wiper, by wiping the underside of the belt pad will preserve the functionality of both the belt pad steering system and the endpoint detection system.

Abstract: A wafer carrier head assembly for holding a wafer in chemical mechanical planarization applications is dis;losed that includes a downwardly protruding wafer retaining ring that moves independent of the wafer carrier head and retains an edge of the wafer on said polishing surface. An adjustable wafer holding mechanism that applies one of a uniform downward force and a uniform upward force to the wafer is also included. Application of the upward force allows the wafer holding mechanism to retain and transport the wafer to a polishing surface. Application of the downward force allows the wafer holding mechanism to retain the wafer on the polishing surface and allows the wafer to be uniformly polished. The wafer carrier head assembly herein disclosed is also configured to pivotally accommodate changes in parallelism between the wafer and the polishing surface when the wafer is being polished.

Abstract: A processing belt for use in chemical mechanical planarization (CMP), and methods for making the same, is provided. Embodiments of the processing belt include a mesh belt, and a polymeric material encasing the mesh belt to define the processing belt. The processing belt is fabricated so that the mesh belt forms a continuous loop within the polymeric material, and the mesh belt is constructed as a grid of intersecting members. The intersecting members are joined at fixed joints to form a rigid support structure for the processing belt.

Abstract: The present invention provides a diffuser and a chamber for venting and/or pumping gas. The diffuser includes a body, a reflector, and a set of vanes. The body includes a nozzle through a center portion and has a curved surface on an upper side to define an open space above the curved surface. The nozzle is arranged to allow a gas to flow through and expand in the nozzle. The reflector is disposed over the nozzle and is arranged to reflect the gas from the nozzle into the open space in the body while expanding the gas flow. The vanes further divide the flow into roughly equal portions. In this configuration, the flow of the gas is slowed in the nozzle, the reflector portion, and the open space in the body between the vanes so that the gas flows out of the open space with substantially uniform low velocity.

Abstract: An invention is disclosed for an optical endpoint detection system that utilizes optical interference to determine when a metal layer has reached a thin metal zone during a CMP process. A portion of a surface of a wafer is illuminated with broad baned light source. Then, reflected spectrum data corresponding to a plurality of spectrums of light reflected from the illuminated portion of the surface of the wafer is received. An endpoint is then determined based on optical interference occurring in the reflected spectrum data, which is a result of phase differences in light reflected from different layers of the wafer, and occurs when the top metal layer is reduced to the thin metal zone.

Abstract: A system for rinsing and cleaning a wafer carrier and a semiconductor wafer mounted thereon during a polishing process is provided. The system comprises a head spray assembly that includes a spray nozzle and a spray cavity. At least a part of the head spray assembly is moveably positionable between a park position and a spray position. The spray position is proximate to the wafer carrier such that liquid discharged from the spray nozzle is in liquid communication with the wafer carrier and the semiconductor wafer. The liquid as well as the materials rinsed from the wafer carrier and semiconductor wafer may be retained in the spray cavity and channeled out of the head spray assembly.

Abstract: A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.

Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: A retaining ring is provided. The retaining ring includes a lower annular sleeve having a base. The base has an inner sidewall and an outer sidewall extending therefrom. The lower annular sleeve has at least one hole defined therein. An upper annular sleeve is moveably disposed over the lower annular sleeve. The upper annular sleeve has a top, that has at least one hole defined therein. The top has an inner sidewall and an outer sidewall extending therefrom. A method for reducing a consumption of compressed dry air (CDA) during a chemical mechanical planarization (CMP) operation is also described.

Abstract: A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as urethane in a cylindrical mold. The belt is thus made from a single layer, reducing weight, size, cost and maintenance requirements.

Abstract: A water supply apparatus and a method thereof have a high capability of peeling-off and removing unnecessary objects such as a resist film, and parameters for setting efficient water supply conditions. The water supply apparatus and the method are designed to supply water for cleaning, peeling-off, or treating a target article. On a surface of the target article to be processed, a nozzle device is provided for spraying a mixture of water vapor and water mist. At least the following parameters are respectively set as water supply conditions to proper values so as to supply water to the target article, and these parameters include (1) a weight ratio of water vapor to water mist on the surface to be processed, (2) a temperature of the surface to be processed, and (3) a distance between a (water) blowing port of the nozzle device and the surface to be processed.

Abstract: A wafer integrated plasma diagnostic apparatus for semiconductor wafer processing system having a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is in the center and eight more plasma probe assemblies are at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. At each location and in each of the plasma probe assemblies, there are six possible probe elements having a relative geometrical area such that they are capable of making simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

Abstract: Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.

Abstract: A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a patterned photoresist mask. A layer comprised of polymer material is formed over the patterned photoresist mask. The layer comprised of polymer material and a portion of the patterned photoresist mask are then removed. The layer comprised of polymer material is preferably formed by introducing a process gas into a plasma environment and is preferably formed with less thickness in a low aspect ratio area relative to a high aspect ratio area.

Abstract: Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. In one example, a temperature controller is described within a CMP system. The CMP system has a first roller and a second roller and a linear belt circulating around the first and second rollers. The linear belt has a width that spans between a first edge and a second edge. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned between the first roller and the second roller and configured to contact a back surface of the linear belt. The array of thermal elements extends between the first edge and the second edge of the linear belt width.