Abstract: A CMP polishing pad improves overall material removal rate uniformity by combining multiple polishing pad sections in a serially linked manner, where the polishing pad sections are characterized by at least two different material removal rate profiles. The polishing pad is designed by determining a wafer polishing profile for each of a group of polishing pads where each polishing pad has a unique groove configuration, determining a combination of polishing pad segments, each of the segments constructed with one of the unique groove configurations, that will combine to achieve an improved uniformity in the polishing profile, and manufacturing a polishing pad having pad sections corresponding to the analytically determined pad sections.

Abstract: An ironing assembly for use in chemical mechanical planarization (CMP) is provided. The ironing assembly is designed for use over a linear polishing pad which has a plurality of asperities and applied slurry. The ironing assembly includes an ironing disk having a contact surface. The ironing disk is oriented over the linear polishing pad such that the contact surface of the ironing disk can be applied over the surface of the linear polishing pad to at least partially flatten the plurality of asperities before planarizing a semiconductor wafer surface over the linear polishing pad.

Abstract: As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Abstract: In a method for determining an endpoint in a chemical mechanical planarization (CMP) operation, the concentration of an oxidizing agent in the slurry byproduct generated during the CMP operation is monitored. The endpoint of the CMP operation is determined based on the concentration of the oxidizing agent in the slurry byproduct. The concentration of the oxidizing agent in the slurry byproduct may be monitored by diverting the slurry byproduct from a surface of a polishing pad, and measuring an optical property of the slurry byproduct diverted from the surface of the polishing pad. A CMP system configured to implement the method for determining an endpoint also is described.

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.

Abstract: A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N2, an optional oxygen-containing gas such as O2, and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O2 with N2 and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

Abstract: A processing belt for use in chemical mechanical planarization (CMP), and methods for making the same, are provided. Embodiments of the processing belt include a polymeric material reinforced with a woven fabric or synthetic material encased between the polymeric material and an additional polymeric material layer to define the processing belt. The processing belt is fabricated so that the woven fabric forms a continuous loop and is positioned against a surface of the polymeric material. The additional polymeric material layer is applied over the woven fabric, permeating the woven fabric to bond to the polymeric material forming an integral structure of woven fabric reinforced polymeric material.

Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: A system and method for detecting an endpoint during a chemical mechanical polishing process is disclosed that includes illuminating a first portion of a surface of a wafer with a first broad beam of light. A first reflected spectrum data is received. The first reflected spectrum of data corresponds to a first spectra of light reflected from the first illuminated portion of the surface of the wafer. A second portion of the surface of the wafer with a second broad beam of light. A second reflected spectrum data is received. The second reflected spectrum of data corresponds to a second spectra of light reflected from the second illuminated portion of the surface of the wafer. The first reflected spectrum data is normalized and the second reflected spectrum data is normalized. An endpoint is determined based on a difference between the normalized first spectrum data and the normalized second spectrum data.

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

Abstract: A cascaded disk scrubbing system and method are provided. The cascaded disk scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a disk in a vertical orientation through disk preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the disk and to transition the disk in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each disk preparation zone, and the cascaded disk scrubbing system is configured to progress from dirtiest to cleanest as the disk transitions through each disk preparation zone.

Abstract: Dynamic alignment of a wafer with a blade that carries the wafer involves determination of an approximate value of wafer offset with respect to a desired location of the wafer in a module. This determination is made using an optimization program. The wafer is picked up from a first location using an end effector that transfers the picked up wafer from the first location past sensors to produce sensor data. For an unknown wafer offset, the picked up wafer is misaligned with respect to a desired position of the picked up wafer on the end effector. When the desired position does not correspond to original target coordinates to which the end effector normally moves, the original target coordinates are modified to compensate for the approximate value of the offset and the picked up wafer is placed at the modified target coordinates to compensate for the unknown offset and the misalignment.

Abstract: A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Abstract: A method and apparatus for conditioning a polishing pad is described. The method includes applying a stream of pressurized liquid to the polishing pad, and removing a significant amount of slurry and liquid from the polishing pad using a vacuum. The apparatus includes a liquid distribution unit forming at least one opening upon which liquid is forced through at high pressure, the opening directed at the polishing pad, and a liquid recovery unit positioned downstream from the liquid distribution unit and in communication with the polishing pad, the liquid recovery unit connected with a vacuum for removing liquid and slurry from the polishing pad.

Abstract: A method for using a monitor substrate to determine effectiveness of a cleaning operation is provided. The method includes selecting a substrate from a lot of substrates and inspecting a surface of the substrate to determine a roughness profile of the substrate. The monitor substrate is then processed through a cleaning operation, and the monitor substrate is patterned with die regions throughout. Each of the die regions has a plurality of areas defining distinct roughness simulations. The method the proceeds to inspecting the monitor substrate at one die region and at one of the plurality of areas in the one die region that most closely resembles the roughness profile of the substrate. The inspecting of the monitor substrate is configured to yield data regarding cleaning performance of the cleaning operation.

Abstract: A drip manifold having drip nozzles configured to form controlled droplets is provided for use in wafer cleaning systems. The drip manifold includes a plurality of drip nozzles that are secured to the drip manifold. Each of the plurality of drip nozzles has a passage defined between a first end and a second end. A sapphire orifice is defined within the passage and is located at the first end of the drip nozzle. The sapphire orifice is angled to produce a fluid stream that is reflected within the passage and toward the second end to form one or more uniform drops over a brush.

Abstract: A processing belt for use in chemical mechanical planarization (CMP), and methods for making the same, is provided. Embodiments of the processing belt include a mesh belt, and a polymeric material encasing the mesh belt to define the processing belt. The processing belt is fabricated so that the mesh belt forms a continuous loop within the polymeric material, and the mesh belt is constructed as a grid of intersecting members. The intersecting members are joined at fixed joints to form a rigid support structure for the processing belt.

Abstract: A chamber for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet. The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate within the chamber is included. A chamber top having an inlet is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.