Abstract: A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. The liner can be heated by a heater which provides heat to the liner by thermal conduction. To remove excess heat from the liner, the resilient support can be an aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Abstract: An apparatus for dispensing media is provided. The apparatus has a rotating element having a cylindrical bore with a first end and a second end where the rotating element rotates the first end and the second end. The apparatus also includes a housing which has a fixed input port and a fixed output port where the housing encloses the rotating element. The first end and the second end of the rotating element intermittently switches between being aligned with the fixed input port and the fixed output port and being aligned with the fixed output port and the fixed input port, respectively. The apparatus also has a cylindrical piston contained within the cylindrical bore where the cylindrical piston has a length that is less than the cylindrical bore and switches from being closer to the fixed input port and the fixed output port.

Abstract: A power delivery system for providing energy to sustain a plasma in a plasma processing chamber configured for processing substrates. The power delivery system includes a metallic enclosure having an input port, a first output port, a second output port, and a third output port. There is further included a power distribution box disposed within the enclosure. The power distribution box includes a first AC input port for receiving AC power from external of the metallic enclosure through the input port and for providing AC power to AC loads external to the metallic enclosure via the first output port. There is also included a DC power supply electrically coupled to the power distribution box. The DC power supply is configured to receive the AC power from the power distribution box and to output DC power. The DC power supply is disposed within the metallic enclosure. The DC power is supplied to DC loads external of the metallic enclosure via the second output port.

Abstract: A load station is used in a planarizing machine to perform several useful functions related to handling of a wafer. By centering the wafer with respect to a spindle carrier the load station interrupts the accumulation of positional errors. The load station never makes solid contact with the wafer, but instead the wafer is continually levitated on three cushions of water that are directed upwardly against the lower face of the wafer. The presence of the wafer partially impedes the flow of water from the nozzles used for levitation causing an increase in the water pressure immediately upstream of the nozzles. This increased pressure is sensed and used as an indicator of the presence of a wafer at the load station. The load station further includes a nozzle that directs a stream against the lower side of the wafer so as to elevate the wafer from the load station into the carrier.

Abstract: A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as urethane in a cylindrical mold. The belt is thus made from a single layer, reducing weight, size, cost and maintenance requirements.

Abstract: A pressure booster and method for amplifying a water pressure that is supplied by a water facility is provided. The pressure booster is configured to be connected between the water facility and one or more semiconductor substrate cleaning systems. The pressure booster includes a pump having a pump input that connects to the water facility and a pump output that is configured to produce a fluctuating amplified water pressure that is greater than the water pressure that is supplied by the water facility. Further included is a pressure dampener having a dampener input for accepting the fluctuating amplified water pressure from the pump output. The pressure dampener is configured to partially reduce pressure fluctuations in the fluctuating amplified water pressure. The pressure dampener also has a dampener output. A pressure regulator having a regulator input for receiving the dampener output is also included as part of the pressure booster.

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is configured to spray a liquid onto the surface of the wafer at an application angle and at a fan angle. The application angle is defined between a plane of the surface of the wafer and a spraying plane of the liquid. The fan angle and the application angle are configured such that the spraying liquid covers the surface of the wafer in a quiescent manner.

Abstract: A single slot valve shaft is in a vacuum body between adjacent vacuum chambers, such as a process module and a transport module. Separate valves are provided on the single shaft actuator for each of two valve body slots, each body slot being closed or opened according to the position of the single shaft. The separate valves allow a vacuum condition to be maintained in the transport module while an adjacent process module is open to the atmosphere for servicing. The single shaft allows access to an open valve for servicing the open valve by way of stops that limit drive travel and hold the valve in an open, but not vertically-spaced, position relative to a respective slot. The open valve is easily reached by a gloved hand of a service worker. The single shaft is mounted on a first cradle, and the first cradle is mounted on a second cradle. Two separate shaft drives move the two cradles to position the single shaft to locate the valves between the slots to open one slot and close the other slot.

Abstract: In a vacuum processing chamber, a monitoring arrangement for detecting when a substrate is sufficiently dechucked by an electrostatic clamp to allow safe movement thereof by a transfer mechanism such as a pin lifter. The monitoring arrangement includes an acoustic generator which outputs a sound wave at the resonant frequency of the substrate and the dechucking condition is detected when the sound wave is adsorbed by the substrate. The arrangement can be used during processing of wafers such as plasma etching or chemical vapor deposition.

Abstract: A method for performing and an apparatus to perform chemical mechanical polishing on a semiconductor wafer are disclosed. The apparatus includes a wafer holder, a polishing member, and a movable table. The movable table is in contact with and is supporting the polishing member. The polishing member includes a polishing pad, a backing layer, and a stiffening layer positioned between the backing layer and the polishing pad. The polishing pad has a polishing surface that is oriented to receive a semiconductor wafer held by the wafer holder. The polishing surface is configured to chemically mechanically polish the semiconductor wafer. The method includes holding a semiconductor wafer, moving a polishing member, and bringing a surface of the semiconductor wafer into contact with the polishing member. The polishing member includes a polishing pad, a backing layer, and a stiffening layer positioned between the polishing pad and the backing layer.

Abstract: A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as urethane in a cylindrical mold. The belt is thus made from a single layer, reducing weight, size, cost and maintenance requirements.

Abstract: A probe for measuring properties of plasma includes a shell, a contact extending through the shell and having a first connecting portion positioned in the shell, and a connector guide attached to a second connecting portion, the second connecting portion being detachably coupled to the first connecting portion. In another embodiment, a probe for measuring properties of plasma includes a shell, a contact extending through the shell, wiring extending from the contact and along an interior of the shell, and a coolant inlet line for injecting coolant into the interior of the shell for cooling the wiring. A method for cooling wiring positioned in an interior of a probe includes providing a coolant inlet line for injecting coolant into the interior of the probe and inserting the coolant inlet line in the interior of the probe such that the coolant cools the wiring.

Abstract: A brush assembly includes a distributor having a slot matrix formed in an outer surface of the distributor, the slot matrix including a plurality of longitudinal slots intersecting a plurality of annular slots. The brush assembly further includes a housing having an inner surface abutting the outer surface of the distributor, a brush mounted on the housing and a shaft. During use, the flow of liquid from the shaft to the housing flows through the longitudinal slots and annular slots of the distributor. By appropriately selecting the dimensions and numbers of these slots, the flow of liquid from the shaft to the housing is readily redistributed. For example, the flow of liquid is redistributed to provide a greater amount of liquid to the ends of the brush than to the center of the brush.

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract: A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.

Abstract: Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor is located a the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the wafer surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.

Abstract: A process for selectively removing an anti-reflective coating (ARC) in the manufacturing of semiconductor integrated circuits using an oxygen-free plasma of one or more fluorine containing compounds, chlorine and an optional inert carrier gas. The process renders effective etching of the anti-reflective coating while maintaining dimensional control of a previously etched photoresist.

Abstract: The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter pin during lifting. The perimeter pin is configured to overcome a holding force at an interface of the substrate and the surface. Generally, the holding force is generated between the substrate and the surface during the processing step. The apparatus further includes a center pin for moving the substrate from the first position to a second position wherein the substrate is disposed on the center pin during moving. The second position is further away from the surface of the chuck than the first position.

Abstract: A single slot valve shaft is in a vacuum body between adjacent vacuum chambers, such as a process module and a transport module. Separate valves are provided on the single shaft actuator for each of two valve body slots, each body slot being closed or opened according to the position of the single shaft. The separate valves allow a vacuum condition to be maintained in the transport module while an adjacent process module is open to the atmosphere for servicing. The single shaft allows access to an open valve for servicing the open valve by way of stops that limit drive travel and hold the valve in an open, but not vertically-spaced, position relative to a respective slot. The open valve is easily reached by a gloved hand of a service worker. The single shaft is mounted on a first cradle, and the first cradle is mounted on a second cradle. Two separate shaft drives move the two cradles to position the single shaft to locate the valves between the slots to open one slot and close the other slot.

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.