Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

Abstract: A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

Abstract: A wheel for a conveyor system for transporting semiconductor wafers includes a first section for supporting a semiconductor wafer at a first level and a second section for supporting the wafer at a second level, with the first level being higher than the second level. In one embodiment, each of the first and second sections is semicircular. The first level may be substantially the same as a level at which the wafer is subjected to a wafer cleaning operation, and the distance the second level is below the first level may be in a range from about one sixteenth of an inch to about three sixteenths of an inch. A conveyor system for transporting wafers and a method for transferring wafers from a conveyor system to a wafer processing station also are described.

Abstract: A system and method for detachably securing a locking mechanism to a housing is provided. The locking mechanism comprises a cam ring, a retention ring and a plurality of locking elements. The cam ring and the retention ring are slidably coupled and concentric with respect to each other. The locking elements are movably disposed within the cam ring and the retention ring. When a rotational force is applied to the locking mechanism, the locking elements move between a first position and a second position. The housing is positioned adjacent the locking elements and concentric with the locking mechanism. In the second position, the locking elements engage an engagement mechanism on the housing.

Abstract: An etch that provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma is provided. An extremely high reverse RIE lag is achieved, wherein the etching of small high-aspect ratio openings is possible, but that of large openings is not. A high-density plasma is generated so that carbon monoxide (CO) is ionized to CO+ so that at least 1 sccm equivalent of CO+ is provided. Excited CO neutrals (CO*) are also present within the plasma. Fluorocarbon and hydrofluorocarbon gases are also provided. The excited CO neutrals scavenge free fluorine, near the wafer surface and in the large openings, increasing polymer deposition on the photoresist and in the large openings thus reduce or stop etching in those regions.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: A fluid delivery module for use in preparing a substrate is provided. The fluid delivery module includes a process bowl designed to contain a substrate to be prepared. The process bowl has a bottom wall and a sidewall. The fluid delivery module further includes a fluid delivery ring configured to be attached to the sidewall of the process bowl. The fluid delivery ring includes a plurality of inlet and outlet pairs. Each of the plurality of inlet and outlet pairs is defined in the fluid ring and is designed to receive a respective supply tube. Each respective supply tube has an end that terminates at each of the outlets of the fluid delivery ring and is configured to direct fluid onto a surface of the substrate.

Abstract: A pin stop and method of implementation suitable for use lift pin assemblies used in semiconductor process environments is provided. The pin stop includes a pin shaft and a circular pin head with soft stop and hard stop features defined thereon. The soft stop feature is defined in a grove in the pin head surface and is configured to impact a stopping surface slowing movement of a lift pin assembly. The hard stop then impacts the stopping surface providing a constant, reliable and repeatable position of a wafer positioned on the lift pin assembly.

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck.

Abstract: Wafer preparation systems and methods for wafer preparation are provided. The wafer preparation system includes a scrubber unit and a dryer unit arranged vertically with the dryer unit above the scrubber unit. The scrubber unit is configured to receive a wafer for mechanical scrub cleaning, and the dryer unit is configured to receive the wafer from the scrubber unit for drying after the mechanical scrub cleaning. The cleaning and the drying are accomplished with the wafer in a vertical orientation. An edge holder attached to a lifter rod lifts the wafer through the scrubber unit to the dryer unit. The method for wafer preparation includes receiving a wafer in a scrubbing station and lifting the wafer internally from the scrubbing station to the drying station that is located above the scrubbing station in a vertical arrangement.

Abstract: Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates . The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath.

Abstract: A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

Abstract: An edge ring clamping assembly wherein an edge ring is supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

Abstract: An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.

Abstract: A method of improving the post-etch corrosion resistance of aluminum-containing wafers by performing a two-step post-etch passivation sequence which does not involve a plasma. In the first step the pressure is high, relative to typical passivation procedures, and the wafer temperature is relatively low. In the second step, the pressure is ramped down and the wafer temperature is ramped up. This two-step approach results in a more-efficient removal of chlorine from the wafer, and hence improved corrosion resistance.

Abstract: A vacuum plasma processor includes an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor. When the electrode array is part of the bottom electrode, the electrodes of the array are parts of a thermoelectric, Peltier effect arrangement responsive to localized temperature sensors and are parts of an electrostatic chuck. The thermoelectric arrangement controls localized temperature of workpieces and the chucking voltages indicate workpiece position relative to a workpiece holder including the electrodes. The electrodes of the arrays are coupled to circuitry for determining and/or controlling at least one localized plasma electric parameter at different locations of a workpiece and/or the plasma. The circuitry simultaneously supplies RF power having differing frequencies and/or power levels to different electrodes of the arrays and includes separate matching networks connected to the different electrodes of the array.

Abstract: A retaining ring structure of a carrier head designed for use in a chemical mechanical polishing system (CMP) is provided. The retaining ring includes a retaining ring support and a sacrificial retaining ring, which is designed to confine a substrate to be polished. The included sacrificial retaining ring has an upper surface and a contact surface. The upper surface of the sacrificial retaining ring is configured to be attached to the retaining ring support, such that the retaining ring support holds the sacrificial retaining ring. Preferably, the contact surface of the sacrificial retaining ring is configured to be substantially planer with a top surface of the substrate being polished. In a preferred example, the sacrificial retaining ring can include a plurality of capillary tubes and is constructed from a material having substantially the same characteristics as the surface of the substrate to be polished.

Abstract: A method and apparatus for slurry distribution is provided. The apparatus for the distribution of slurry over a polishing pad surface used in chemical mechanical polishing includes a roller positioned over a polishing pad surface. The roller is connected with a gimbaling attachment to a positioning arm and is configured to apply a force against the polishing pad surface while maintaining a surface of the roller substantially parallel to the polishing pad surface. The gimbaled roller drives the slurry into and over the porous texture of the polishing pad surface and ensures a substantially even distribution of slurry. In another example, a double roller apparatus is also provided and is configured to combine slurry distribution and pad conditioning.

Abstract: A nozzle assembly includes a connector tube having a first end and a second end. An outer surface of the connector tube is threaded. A first cap having an opening therethrough is threaded onto the first end of the connector tube. A second cap having an opening therethrough is threaded onto the second end of the connector tube. Each of the first and second caps has a top surface and a threaded inner surface. The nozzle assembly further includes a nozzle having a tubular portion defining a channel. The tubular portion is disposed in the opening of the first connector cap so that a position of the nozzle can be axially and rotationally adjusted. A spin, rinse, and dry station including the adjustable nozzle assembly and a method for spin rinsing the bottom side, i.e., the backside, of a semiconductor wafer also are described.

Abstract: An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.