Abstract: A package structure is provided. The package structure has a light-emitting region and a non-light-emitting region that is adjacent to the light-emitting region, and includes a substrate, a first light-emitting layer, a second light-emitting layer and a third light-emitting layer. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are sequentially stacked on the substrate. Each of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer includes a transparent adhesive layer disposed in the light-emitting region, a light-emitting diode (LED) chip disposed on the transparent adhesive layer, a redistribution layer formed on the LED chip and extending from the light-emitting region to the non-light-emitting region, and a planarization layer disposed on the LED chip and the redistribution layer.

Abstract: A pixel unit includes a substrate, a wiring layer and three light-emitting elements. The wiring layer includes first electrode wires and second electrode wires. The first electrode wires and the second electrode wires are arranged side by side and separated from each other by a spacing. A first blocking wall structure is at a first end portion of each of the first electrode wires, the first end portion is near the corresponding second electrode wires, and a second blocking wall structure is at a second end portion of each of the second electrode wires, the second end portion is near the corresponding first electrode wires. Three light-emitting elements emit red light, green light and blue light respectively. The light-emitting elements are in a flip chip configuration and are connected to one of the first electrode wires and one of the second electrode wires adjacent to each other respectively.

Abstract: The present pertains to an optical module including an optical shell, a plurality of first light-emitting diodes, a plurality of light guide plates, and a plurality of second light-emitting diodes. The optical shell includes a plurality of recessed portions and a flat portion surrounding the recessed portions. One of the first light-emitting diodes is disposed in the recessed portions. Each of the light guide plates has a top surface and a sidewall, and the top surface of the light guide plate is substantially at the same level as the flat portion of the optical shell. One of the second light-emitting diodes is disposed below the top surface of the light guide plates and is adjacent to the sidewall of the light guide plates.

Abstract: A light-emitting diode (LED) display device, including a substrate, a de-mura region, a plurality of mounting blocks, a first LED chip array and a second LED chip array, is disclosed. The substrate includes a first region and a second region adjacent to each other. The de-mura region includes part of the first region and part of the second region. The mounting blocks are arranged in the first and the second region as an array, each mounting block including a first and a second mounting part. The first and the second mounting part are connected in parallel. The first LED chip array includes multiple first LED chips. The second LED chip array includes multiple second LED chips. Each first mounting part is arranged on the first side of the corresponding mounting block, and each second mounting part is arranged on the second side of the corresponding mounting block.

Abstract: A light-emitting diode chip includes a semiconductor layer, an insulating layer, a first and a second electrode. The semiconductor layer has a top side, a bottom side opposite to the top side and a sidewall connecting the top side and the bottom side, and a concave-convex structure is at the top side of the semiconductor layer. The insulating layer covers the sidewall and the bottom side of the semiconductor layer, and has a protruding portion extending and protruding above the concave-convex structure along a direction parallel to the sidewall. A vertical distance between a highest point of the concave-convex structure and that of the protruding portion is from 0.5 ?m to four times the thickness of the semiconductor layer. The first and the second electrode are on the bottom side of the semiconductor layer and penetrate through the insulating layer. The second electrode is adjacent to the first electrode.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: A light-modulating unit is provided. The light-modulating unit includes a light-modulating structure that has a light-emitting surface and a bottom surface that are opposite to each other. The light-modulating structure includes a housing cavity that extends from the bottom surface into the interior of the light-modulating structure. The light-modulating unit also includes a light-emitting element disposed in the housing cavity. The light-modulating unit further includes a light-reflecting array structure disposed on the light-emitting surface and directly above the light-emitting element. The light-reflecting array structure includes multiple grooves that form an m×n array, where m and n are positive integers greater than or equal to 2.

Abstract: The light emitting diode packaging structure includes a flexible substrate, micro light emitting elements disposed on the flexible substrate, a conductive pad, a redistribution layer, and an electrode pad. The micro light emitting elements have a first surface facing to the flexible substrate and a second surface opposite to the first surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting elements. The redistribution layer covers the micro light emitting elements and the conductive pad. The redistribution layer includes an insulating layer and a circuit layer embedded in the insulating layer. The circuit layer is electrically connected to the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer.

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

Abstract: A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Abstract: A pixel array package structure includes: a substrate; a pixel array disposed on the substrate, in which the pixel array includes a plurality of light emitting diode chips, and the light emitting diode chips include at least one red diode chip, at least one green diode chip, at least one blue diode chip, and a combination thereof; a reflective layer disposed on the substrate and between any two adjacent of the light emitting diode chips; a light-absorbing layer disposed on the reflective layer and surrounding the pixel array; and a light-transmitting layer disposed on the pixel array, the reflective layer, and the light-absorbing layer, in which the light-transmitting layer has an upper surface and a lower surface opposite thereto, and the lower surface is in contact with the pixel array, and the upper surface has a roughness of 0.005 mm to 0.1 mm.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 ?m.

Abstract: A diode package structure includes a substrate, at least one diode chip and an opaque encapsulating layer. The substrate has an electrically conductive layer. At least one diode chip is mounted on the substrate and electrically connected to the electrically conductive layer. The opaque encapsulating layer has a cap portion and a sidewall portion, wherein the sidewall portion is connected to and surrounds the substrate to jointly form a concave structure, the cap portion is connected between a sidewall of the diode chip and the sidewall portion, wherein a first contact vertex of the cap portion and the sidewall of the diode chip is higher than a second contact vertex of the cap portion and the sidewall portion.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: A semiconductor chip comprises a semiconductor stack and a passivation layer. The semiconductor stack comprises a top surface, a bottom surface opposite to the top surface, and a plurality of sidewalls between the top surface and the bottom surface. The passivation layer conformally covers the top surface and the sidewalls of the semiconductor stack. When viewing from the bottom surface, a plan-view contour of the semiconductor stack comprises a plurality of edges and corners. Each of the corners is defined by two adjacent edges. A plan-view contour of the passivation layer surrounding the plan-view contour of the semiconductor stack comprises a protruding portion adjacent to one of the corners and the protruding portion protrudes outwards from the plan-view contour of the passivation layer.

Abstract: A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.