Patents Assigned to Lextar Electronics Corporation
  • Patent number: 11121288
    Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: September 14, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Jung-Tang Chu, Kun-Yang Hsieh, Che-Hung Lin, Yu-Jen Cheng
  • Patent number: 11038088
    Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: June 15, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Te-Chung Wang, Shiou-Yi Kuo
  • Patent number: 11018182
    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: May 25, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Yi-Jyun Chen, Li-Cheng Yang, Yu-Chun Lee, Shiou-Yi Kuo, Chih-Hao Lin
  • Patent number: 10991855
    Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 27, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Cheng-Ping Chang, Zong-Han Yu, Kuo-Chan Hung
  • Patent number: 10978622
    Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.
    Type: Grant
    Filed: August 11, 2019
    Date of Patent: April 13, 2021
    Assignee: Lextar Electronics Corporation
    Inventors: Yi-Ting Tsai, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 10971650
    Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: April 6, 2021
    Assignee: Lextar Electronics Corporation
    Inventor: Shiou-Yi Kuo
  • Patent number: 10944034
    Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: March 9, 2021
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventor: Shiou-Yi Kuo
  • Patent number: 10908344
    Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: February 2, 2021
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Pei-Song Cai, Lung-Kuan Lai, Shih-Yu Yeh, Guan-Zhi Chen, Hong-Zhi Liu, Kuo-Yen Chang, Ching-Hua Li
  • Patent number: 10816716
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 27, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Patent number: 10808171
    Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: October 20, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Chi Lee, Mu-Huai Fang, Ru-Shi Liu, Yi-Ting Tsai, Tzong-Liang Tsai, Yu-Chun Lee
  • Patent number: 10811396
    Abstract: A display device includes a substrate, a light-emitting member, and an anti-reflective glass layer. The light-emitting member is on the substrate. The anti-reflective glass layer is over the light-emitting member, and the anti-reflective glass layer has a transmittance of 40-95%. The anti-reflective glass layer includes a glass layer and a light-absorbing layer. The glass layer has a rough top surface and a haze of 70-80%. The light-absorbing layer is on the rough top surface of glass layer.
    Type: Grant
    Filed: January 20, 2019
    Date of Patent: October 20, 2020
    Assignee: Lextar Electronics Corporation
    Inventors: Cheng-Yu Tsai, Jian-Chin Liang, Jo-Hsiang Chen
  • Patent number: 10808172
    Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: October 20, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Zhen Bao, Yu-Jui Tseng, Ru-Shi Liu, Hung-Chun Tong, Hung-Chia Wang, Yu-Chun Lee, Tzong-Liang Tsai
  • Patent number: 10811578
    Abstract: A LED carrier includes a substrate, a conductive layer, an adhesive layer, and a reflector. The conductive layer is disposed on the substrate, and has a bonding portion and an extending portion. The bonding portion has a top surface higher than a top surface of the extending portion. The adhesive layer covers the extending portion of the conductive layer and exposes the bonding portion of the conductive layer. The reflector is disposed over the adhesive layer. The adhesive layer has a hook portion in contact with a corner of the reflector.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: October 20, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Chih-Hao Lin, Chun-Peng Lin, Chang-Han Chen, Kuang-Neng Yang, Cheng-Ta Kuo
  • Patent number: 10763402
    Abstract: A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.
    Type: Grant
    Filed: December 5, 2018
    Date of Patent: September 1, 2020
    Assignee: Lextar Electronics Corporation
    Inventors: Shang-Hsun Tsai, Li-Wei Liu
  • Patent number: 10756706
    Abstract: A filter circuit comprises a resistor-capacitor (RC) circuit, a comparator circuit, and an output control circuit. The RC circuit is configured to generate a ripple voltage according to the PWM signal. The comparator circuit couples with the RC circuit, and is configured to compare the ripple voltage with a first reference voltage, and output a switch signal according to a comparison result. The output control circuit couples with the comparator circuit and the RC circuit, and is configured to generate an output signal according to the switch signal and the PWM signal. When a duty ratio of the PWM signal is larger than a predetermined threshold value, the output signal is corresponding to the PWM signal. When the duty ratio of the PWM signal is smaller than the predetermined threshold value, the output signal is not corresponding to the PWM signal.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: August 25, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Tsung-Yuan Lai, Chien-Shen Hung, Hsien-Chih Ho
  • Patent number: 10720559
    Abstract: A light-emitting diode (LED) device and a manufacturing method thereof are provided. The LED device includes a frame body, a first conductive extension structure, a second conductive extension structure, and a LED chip. The frame body includes an upper surface, a bottom, a recess on the opposite side of the bottom, and a first side surface and a second side surface opposite to each other. The first and second conductive extension structures are located in the frame body. The first and second conductive extension structures extend from the first side surface to the second side surface of the frame body. The frame body encapsulates a left side surface, a right side surface, a top surface, and a bottom surface of each of the first and second conductive extension structures. The LED chip is disposed in the recess and includes a first conductive pad and a second conductive pad.
    Type: Grant
    Filed: October 7, 2018
    Date of Patent: July 21, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Lung-Kuan Lai, Pei-Song Cai, Jian-Chin Liang, Hao-Chung Chan, Hong-Zhi Liu
  • Patent number: 10720555
    Abstract: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: July 21, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chun Tong, Chang-Zhi Zhong, Fu-Hsin Chen, Yu-Chun Lee
  • Patent number: 10693037
    Abstract: A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: June 23, 2020
    Assignee: Lextar Electronics Corporation
    Inventors: Shiou-Yi Kuo, Shih-Huan Lai
  • Patent number: 10677423
    Abstract: A light emitting device includes a circuit board, light-emitting diodes, an optically clear adhesive layer and a transparent film. The light-emitting diodes are disposed on a surface of the circuit board. The optically clear adhesive layer is disposed on the surface of the circuit board and covers the light-emitting diodes. The transparent film is disposed over a side of the optically clear adhesive layer distant from the circuit board. A hardness of the transparent film is greater than a hardness of the optically clear adhesive layer.
    Type: Grant
    Filed: December 9, 2018
    Date of Patent: June 9, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Yin-Cyuan Wu, Yu-Chang Wu, Yun-Yi Tien
  • Patent number: D898268
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: October 6, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Tsung-Huan Tsai, Yu-Min Lin, Chin-Hao Chi, Wei-Yuan Tsou