Abstract: An object is to provide a film for latex ink having a latex ink-receiving layer containing an acrylic resin, the latex ink-receiving layer having excellent adhesion to both a printed portion using latex ink and a base material. Then, the object is achieved by the following: a film for latex ink having a laminate structure in which a latex ink-receiving layer (X) and a base material (Y) are stacked, in which the latex ink-receiving layer (X) is formed of a resin composition (x1) containing an acrylic resin (A) having a cross-linkable functional group and a cross-linking agent (B), and the cross-linking agent (B) contains an isocyanurate compound (B1) and a modified product (B2) of the isocyanurate compound.

Abstract: The present invention relates to a method for manufacturing a gas barrier film, including at least steps 1 to 3 (each step is as defined in the specification) in this order; a gas barrier film including: a substrate; and a polysilazane-based compound-derived layer on at least one surface side of the substrate, wherein the polysilazane-based compound-derived layer satisfies a specific requirement; and a gas barrier film including: a substrate; and a gas barrier layer laminate provided on at least one surface side of the substrate and including a gas barrier layer (XG) not adjacent to the substrate and a gas barrier layer (YG) located closer to the substrate than the layer (XG) and adjacent to the layer (XG), the gas barrier layers (XG) and (YG) being directly laminated, wherein the gas barrier layer laminate satisfies a specific requirement.

Abstract: A roll includes a core having a tubular shape and a laminate wound around the core. The laminate includes a process film, a surface coat layer formed from a fluorine resin, a substrate layer, an adhesive layer, and a release liner formed from polyethylene terephthalate (PET) in this order in a laminating direction. The process film is formed from at least of polyethylene terephthalate (PET), polyolefin, and polyvinyl chloride (PVC), and is thinner than the release liner.

Abstract: A wiring sheet for three-dimensional molding includes a pseudo-sheet structure including a plurality of conductive linear bodies arranged at an interval; a first embedding layer; and a second embedding layer, the pseudo-sheet structure being sandwiched between the first embedding layer and the second embedding layer. The conductive linear bodies have a wave shape when viewed from above. A storage shear modulus at 23° C. of each of the first embedding layer and the second embedding layer is from 1×104 to 3×106 Pa. When a thickness of the first embedding layer is T1, a thickness of the second embedding layer is T2, and a thickness of the pseudo-sheet structure is T3, a specific relational equation is satisfied.

Abstract: [Problem] A release liner and an adhesive sheet with which contact area of an adhesive layer on an adherend is reduced at positioning and adhesive force can excellently develop at the adhesive layer after positioning are provided. [Solution] A release liner 100 has a surface 101 at which concave portions 120 are formed. The concave portion narrows toward a deepest part 121, and a portion 110 between the concave portions has a convex sectional shape in a thickness direction D1 of the release liner. The convex sectional shape narrows at a continuous tilt from the deepest part to an apex 111 of the convex sectional shape, and in the convex sectional shape, a width w at a height of ½h, which is half of a height h, and the height h have a relation of w>h.

Abstract: An adhesive tape for semiconductor processing, which includes a base material, a buffer layer that is provided on at least one surface side of the base material, and an adhesive layer that is provided on the other surface side of the base material. This adhesive tape is configured such that: the buffer layer has a Young's modulus of 10-400 MPa at 23° C. and a rupture energy of 1-9 MJ/m3; and the Young's modulus of the base material at 23° C. is higher than the above-mentioned Young's modulus of the buffer layer.

Abstract: A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

Abstract: A semiconductor processing adhesive tape that includes a substrate, a buffer layer which is provided on at least one side of the substrate, and an adhesive layer which is provided on the other side of the substrate, wherein the buffer layer has an energy to break at 23° C. of 13 to 80 MJ/m3.

Abstract: Provided are a conductive structure having low contact resistance, the conductive structure including a cured layer formed by curing a curable composition, a conductive linear body fixed by the cured layer, and a pair of electrodes placed so as to directly contact the conductive linear body, wherein the curable composition contains a cationic polymerizable compound and a photocationic polymerization initiator, and the cured layer fixes the electrodes; a manufacturing method for the conductive structure; and article including the conductive structure; and a manufacturing method for the article.

Abstract: A curable resin film of the present invention forms a first protective film (1a) by attaching the curable resin film containing an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 to a surface (5a) of a semiconductor wafer (5) having a plurality of bumps (51) with an average peak height (h1) of 50 to 400 ?m, an average diameter of 60 to 500 ?m, and an average pitch of 100 to 800 ?m, heating the attached curable resin film at 100° C. to 200° C. for 0.

Abstract: An aspect of the present invention provides an electromagnetic wave absorption film that is less susceptible to the surrounding environment.

Abstract: This film-shaped firing material is a film-shaped firing material containing sinterable metal particles and a binder component, in which, when the average thickness of the portion of the film-shaped firing material excluding the edge portion is deemed 100%, the average thickness of the edge portion of the film-shaped firing material is at least 5% thicker than the average thickness of the portion of the film-shaped firing material excluding the edge portion.

Abstract: A release liner which makes it difficult for an adhesive layer to impair slidability and makes it easy to exhibit an adhesive force suitably, a method of producing a release liner, an adhesive sheet, and a method of producing an adhesive sheet. A release liner has a surface provided with a ridge portion extending linearly, and on the surface, a plurality of recesses having different depths are randomly formed in a surface direction and are continuously connected.

Abstract: A release liner which makes it difficult for an adhesive layer to impair slidability and makes it easy to exhibit an adhesive force suitably, a method of producing a release liner, an adhesive sheet, and a method of producing an adhesive sheet. A release liner has a surface provided with a ridge portion extending linearly, and on the surface, a plurality of recesses having different depths are randomly formed in a surface direction and are continuously connected.

Abstract: This curable resin film forms a first protective film on a surface having bumps of a semiconductor wafer by being attached to the surface and being cured, in which a cured material of the curable resin film has a Young's modulus of equal to or greater than 0.02 MPa and a peak value of a load measured by a probe tack test at 80° C. is equal to or less than 500 g. A first protective film forming sheet is provided with a first supporting sheet, and the curable resin film is provided on one surface of the first supporting sheet.

Abstract: A film-shaped firing material 1 is provided, including sinterable metal particles 10 and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a shrinkage factor in a planar direction of the film-shaped firing material after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes is 10% or less with respect to the shrinkage factor before the firing, and a volume shrinkage factor thereof is in a range of 15% to 90% with respect to the volume shrinkage factor before the firing, and a contact ratio of the film-shaped firing material with an adherend after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes in a state in which the film-shaped firing material is in contact with the adherend is 90% or greater with respect to a contact area of the adherend.

Abstract: In various embodiments, the present invention is directed to an interior-light-utilizing display obtained by laminating a reflection structure and a light diffusion film, in which the light diffusion film has an internal structure including a plurality of regions having a relatively high refractive index in a region having a relatively low refractive index in the film. The interior-light-utilizing display provides improved luminance and is capable of stably maintaining constant display characteristics even where the incident angle of the external light changes.

Abstract: A pressure sensitive adhesive tape for semiconductor processing includes a base having a Young's modulus of 1000 MPa or more at 23° C., and a pressure sensitive adhesive layer provided on at least one surface of the base, and the product (N)×(C) of (N) and (C) is 500 or more at 30° C., and 9000 or less at 60° C., where (N) [?m] is a thickness of the pressure sensitive adhesive layer and (C) [?m] is a creep amount.

Abstract: A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40° C. to 600° C. at a temperature-rising-rate of 10° C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of “A1<B1<A1+200 seconds” and a relationship of “A1<2000 seconds”.

Abstract: The present invention provides a film-shaped firing material 1 including sinterable metal particles 10, and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a tensile elasticity of the film-shaped firing material at 60° C. is in a range of 4.0 to 10.0 MPa, and a breaking elongation thereof at 60° C. is 500% or greater; and a film-shaped firing material with a support sheet including the film-shaped firing material 1 which contains sinterable metal particles and a binder component, and a support sheet 2 which is provided on at least one side of the film-shaped firing material, in which an adhesive force (a2) of the film-shaped firing material to the support sheet is smaller than an adhesive force (a1) of the film-shaped firing material to a semiconductor wafer, the adhesive force (a1) is 0.1 N/25 mm or greater, and the adhesive force (a2) is in a range of 0.1 N/25 mm to 0.