Abstract: A novel polymer positive temperature coefficient (PPTC) material, device, and method of fabrication. One example of polymer positive temperature coefficient (PPTC) includes a polymer matrix, the polymer matrix comprising a first polymer. The PPTC material may further include a conductive filler, disposed in the polymer matrix; and at least one polymer filler, dispersed within the polymer matrix. The at least one polymer filler may comprise a second polymer, different from the first polymer, wherein the at least one polymer comprises a first melting temperature, and wherein the second polymer comprises a second melting temperature, the second melting temperature exceeding the first melting temperature by at least 20 C.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: Provided herein are thermally protected varistor (TPV) devices including a varistor body and a terminal assembly directly coupled together. The terminal assembly may include a housing, wherein an opening is provided in a base of the housing. A lead is coupleable with the varistor body via a thermal linking material positioned within the opening of the base, the thermal linking material operable to maintain direct physical contact with the lead when the thermal linking material is below a melting point. The terminal assembly may further include a shield slidable within the housing between a first position and a second position, wherein in the first position the shield is positioned adjacent the thermal linking material, and in the second position the shield is positioned between the lead and the second side of the varistor body. The shield includes a tab for releasably coupling the shield to the housing.

Abstract: Approaches provided herein include a protection device assembly having a protection component and a first electrode layer extending along a first main side of the protection component. The first electrode layer may include a first section separated from a second section by a first gap. The assembly may further include a second electrode layer extending along a second main side of the protection component, the second electrode layer including a third section separated from a fourth section by a second gap, wherein the first gap is aligned with the second gap. The assembly may further include a first insulation layer disposed over the first electrode layer, and a second insulation layer disposed over the second electrode layer. The assembly may further include a solder pad extending around an end of the protection component, the solder pad further extending over the first insulation layer and the second insulation layer.

Abstract: Provided herein are protection devices having a tubular ceramic part and a tubular metal oxide varistor (MOV) electrically coupled in series or parallel. In some embodiments, the tubular ceramic part is connected between a first electrode and a second electrode, and the tubular MOV is connected between the second electrode and a third electrode. In some embodiments, the tubular ceramic part and the tubular MOV have a same or similar shape and/or outer circumference. The protection device further includes an enclosure surrounding the tubular ceramic part and the tubular MOV, wherein the first electrode, the second electrode, and the third electrode each have leads extending outside the enclosure. In some embodiments, the tubular MOV includes a central cavity aligned with a central cavity of the tubular ceramic part, wherein the central cavity of the tubular MOV MOV and the central cavity of the tubular ceramic part contain an inert gas.

Abstract: Structurally supported electrical transient materials are disclosed. Furthermore, methods to provide structurally supported electrical transient materials are disclosed. In one implementation, a structurally supported electrical transient material includes a support structure that is at least partially covered by an electrical transient material. In one example, the support structure is a mesh material integrated at least partially in the electrical transient material.

Abstract: An overheat protection device and a varistor are provided. The overheat protection device comprises: a first electrode and a second electrode disposed to be spaced apart; a hot-melt wire located between the first electrode and the second electrode, the hot-melt wire being in electrical contact with the first electrode and the second electrode; and an insulator supporting the first electrode and the second electrode, wherein the hot-melt wire is melted into a liquid hot-melt material when the ambient temperature reaches a predetermined temperature, the liquid hot-melt material wets the first electrode and the second electrode, and the liquid hot-melt material does not wet the insulator at least at a portion located between the first electrode and the second electrode.

Abstract: Provided herein are protection devices having a tubular ceramic part and a tubular metal oxide varistor (MOV) electrically coupled in series or parallel. In some embodiments, the tubular ceramic part is connected between a first electrode and a second electrode, and the tubular MOV is connected between the second electrode and a third electrode. In some embodiments, the tubular ceramic part and the tubular MOV have a same or similar shape and/or outer circumference. The protection device further includes an enclosure surrounding the tubular ceramic part and the tubular MOV, wherein the first electrode, the second electrode, and the third electrode each have leads extending outside the enclosure. In some embodiments, the tubular MOV includes a central cavity aligned with a central cavity of the tubular ceramic part, wherein the central cavity of the tubular MOV MOV and the central cavity of the tubular ceramic part contain an inert gas.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: Electrical transient materials are disclosed. Furthermore, methods to provide electrical transient materials are disclosed. In one implementation, an apparatus includes an electrical transient material; and conductive particles disposed in the electrical transient material, at least one or more of the conductive particles have an irregular shape.

Abstract: An electromagnetic interference (EMI) circuit assembly includes a first, second, and third conductive layer. A protection component disposed between the first and second conductive layers. A dielectric layer is disposed between the second and the third conductive layers. The protection component is configured to protect a load from one or both of an overcurrent condition and an over temperature condition, and the third layer define a capacitor configured to suppress EMI signals.

Abstract: An electromagnetic interference (EMI) circuit assembly includes a first, second, and third conductive layer. A protection component disposed between the first and second conductive layers. A dielectric layer is disposed between the second and the third conductive layers. The protection component is configured to protect a load from one or both of an overcurrent condition and an over temperature condition, and the third layer define a capacitor configured to suppress EMI signals.

Abstract: In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include a first layer comprising a phenolic material or a silicone material; and a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating.

Abstract: A circuit protection device including a PTC device and a diode. A first insulation layer is formed between first electrode surfaces of the diode and the PTC device. Vias for thermally and electrically connecting the first electrode surfaces of the diode and the PTC device are formed in the first insulation layer. First, second, and third external electrode pads are provided on a second insulation layer formed on the second electrode surface of the PTC device. The second electrode surface of the PTC device is electrically connected to the first external electrode pad. The first electrode surface of the diode and the first electrode surface of the PTC device are electrically connected to the second external electrode pad. A second electrode surface of the diode is electrically connected to the third external electrode pad.

Abstract: A circuit protection device includes a metal oxide varistor (MOV), a spring terminal and a thermal disconnect coupling the spring terminal to the MOV. A gas discharge tube (GDT) is coupled to the MOV. The spring terminal is biased such that upon occurrence of an overvoltage condition, heat generated by the MOV melts the thermal disconnect and allows the spring terminal to be displaced away from the MOV, thereby creating an opening circuit.

Abstract: A circuit protection device includes a metal oxide varistor (MOV), a spring terminal and a thermal disconnect coupling the spring terminal to the MOV. A gas discharge tube (GDT) is coupled to the MOV. The spring terminal is biased such that upon occurrence of an overvoltage condition, heat generated by the MOV melts the thermal disconnect and allows the spring terminal to be displaced away from the MOV, thereby creating an opening circuit.

Abstract: A circuit protection device includes a metal oxide varistor (MOV), a spring terminal and a thermal disconnect coupling the spring terminal to the MOV. A gas discharge tube (GDT) is coupled to the MOV. The spring terminal is biased such that upon occurrence of an overvoltage condition, heat generated by the MOV melts the thermal disconnect and allows the spring terminal to be displaced away from the MOV, thereby creating an opening circuit.

Abstract: In one embodiment a varistor may include a ceramic body. The varistor may further comprise a multilayer coating disposed around the ceramic body. The multilayer coating may include a first layer comprising a phenolic material or a silicone material; and a second layer adjacent the first layer, the second layer comprising a high dielectric strength coating.