Abstract: A unidirectional transient voltage suppression (TVS) device. The TVS device may include a first layer, comprising an N+ material, formed on a first part of a first main surface of a substrate and a second layer formed from an N? material. The second layer may extend from a second part of the first main surface, surrounding the first layer, and may extend subjacent to the first layer. The TVS device may include a third layer, comprising a P+ material, wherein the second layer is disposed between the first layer and the third layer. The TVS device may also include an isolation region, extending from the first main surface, and being disposed around the second layer.

Abstract: A multiple-channel protection device and associated methods thereof. The device includes a first lead having a first chip attachment portion and a second chip attachment portion, a second lead having a third chip attachment portion, and a third lead having a fourth chip attachment portion. A first semiconductor chip is configured to be conductively coupled to the first chip attachment portion and the third chip attachment portion. A second semiconductor chip is configured to be conductively coupled to the second chip attachment portion and the fourth chip attachment portion.

Abstract: A discrete semiconductor packaging structure and associated methods thereof. The structure includes a housing, a chip assembly pad being encapsulated by the housing, where the chip assembly pad is configured for coupling to a semiconductor chip. The structure further includes one or more leads, at least partially encapsulated by the housing, a clip including one or more terminals and a chip linker, where the terminals being configured for coupling to one or more leads, and a heat dissipation block, where the chip linker being coupled between the semiconductor chip and the heat dissipation block. The heat dissipation block is configured for removing heat from the semiconductor chip during operation.

Abstract: A surface mounting apparatus, structure, and associated methods thereof. The surface mounting apparatus includes a housing, a lead frame, at least partially encapsulated by the housing. The lead frame includes a chip mounting surface having a chip mounting pad, and one or more first stress relief features disposed outside of the chip mounting surface. The apparatus further includes another lead frame, at least partially encapsulated by the housing.

Abstract: A TVS device may include a substrate, comprising a polarity of a first type, a first dopant layer, disposed on a first main surface of the substrate, and comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may further include a second dopant layer, disposed on a second main surface of the substrate, opposite the first main surface, the second layer comprising the polarity of the first type, and a patterned layer, disposed on the second main surface of the substrate, the patterned layer comprising the polarity of the second type, wherein the patterned layer is interspersed with the second layer.

Abstract: A transient voltage suppression (TVS) device. The TVS device may include a substrate, comprising a polarity of a first type. The TVS device may further include a first dopant layer, disposed on a first surface of the substrate, the first layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may include a first buffer layer, disposed on the first dopant layer, and a first outer contact layer, disposed on the first buffer layer.

Abstract: A transient voltage suppression (TVS) device and method of formation. A TVS device may include a first layer, disposed on a first surface of a substrate, comprising a first P+ layer; a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P+ layer; a third layer, disposed between the first P+ layer and the second P+ layer, comprising an N? layer; and an isolation diffusion region, comprising a P structure, connected to the second P+ layer, and extending along a perimeter of the N? layer.

Abstract: A lead frame package includes a first semiconductor chip, a second semiconductor chip, and a first lead frame. The first semiconductor chip is connected to a die attachment pad using a first clip. The second semiconductor chip is connected to the die attachment pad using a second clip. The die attachment pad is sandwiched between the first semiconductor chip and the second semiconductor chip. The first lead frame is connected to the die attachment pad.

Abstract: An overvoltage protection device may include an n-type semiconductor substrate, a p-type layer disposed atop the n-type semiconductor substrate, and a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer.

Abstract: Provided herein are package structures including a first lead frame having a first pedestal and a first lead extending from the first pedestal. A first perimeter ridge defines a first recessed area in a first main side of the first pedestal, wherein a die pad is positioned within the first recessed area. The package structure may further include a chip layer having a first main side opposite a second main side, wherein the second main side is in abutment with the first perimeter ridge of the pedestal of the first lead frame. The package structure may further include a clip including a second pedestal and a lead connector extending from the second pedestal, wherein a second perimeter ridge defines a second recessed area in a second main side of the second pedestal, and wherein the second perimeter ridge is in abutment with the first main side of the chip layer.

Abstract: A discrete semiconductor package includes a semiconductor device, a left lead, and a right lead. The semiconductor device has a first side and a second side, the second side being opposite the first side. The left lead has a left terminal and a platform to support the semiconductor device on the first side. The right lead has a right terminal and a clip coin to support the semiconductor device on the second side.

Abstract: A discrete power semiconductor package includes a semiconductor chip, a heatsink, a first lead, a second lead, and a clip. The heatsink is adjacent the semiconductor chip and draws heat away from the semiconductor chip. The clip binds the semiconductor chip to the heatsink and includes a chip linker, a first terminal, and a second terminal. The chip linker is atop the semiconductor chip. The first terminal connects to the first lead and the second terminal connects to the second lead.

Abstract: In one embodiment, an asymmetric TVS device may include a semiconductor substrate, comprising an inner region, the inner region having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, the first surface region comprising a second polarity, opposite the first polarity. The asymmetric TVS device may also include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, and wherein the second surface region comprises a second dopant concentration, greater than the first dopant concentration.

Abstract: Provided herein are semiconductor packages with improved clamps. In some embodiments, a semiconductor package may include a housing having a wall extending from a main body, and a set of support walls extending from the wall. The semiconductor package may further include a clamp extending between the set of support walls, the clamp having a first planar section coupled to a first support wall of the set of support walls, a second planar section coupled to a second support wall of the set of support walls, and a third planar section between the first and second planar sections. The third planar section may include an opening operable to receive a fastener, and a plurality of stress relief openings.

Abstract: Aspects of the present disclosure include one or more semiconductor electrostatic discharge protection devices. At least one embodiment includes a semiconductor electrostatic discharge device with one or more fingers divided into two segments with alternating p-diffusion and n-diffusion regions, with each region being associated with at least one of a portion of a diode and/or silicon-controlled rectifier (SCR).

Abstract: A surge protection apparatus may include an input terminal; an output terminal, the output terminal electrically coupled to the input terminal; a ground terminal, the ground terminal electrically coupled to the input terminal and output terminal; a positive temperature coefficient (PTC) fuse, the PTC fuse connected in electrical series between the input terminal and output terminal; a crowbar device, the crowbar device electrically connected to the ground terminal and output terminal, wherein the crowbar device is in electrical series with the PTC fuse between the input terminal and ground terminal; and a central frame portion, the central frame portion electrically coupled to the input terminal, output terminal and ground terminal, wherein the crowbar device is disposed on a first side of the central frame portion and the PTC fuse is disposed on a second side of the central frame portion, opposite the first side.

Abstract: A protection device may include a semiconductor substrate and a thyristor-type device, formed within the semiconductor substrate, where the thyristor device extends from a first main surface of the semiconductor substrate to a second main surface of the semiconductor substrate. The protection device may include a first PN diode, formed within the semiconductor substrate; and a second PN diode, formed within the semiconductor substrate, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode.

Abstract: A method of forming a semiconductor device may include providing a semiconductor substrate, the semiconductor substrate comprising an inner region of a first polarity, and a surface layer, disposed on the inner region, wherein the surface layer comprises a second polarity, opposite the first polarity. The method may further include removing a surface portion of the semiconductor substrate using a saw, wherein a trench region is formed within the semiconductor substrate, and cleaning the trench region using a chemical process, wherein at least one mesa structure is formed within the semiconductor substrate.

Abstract: In one embodiment, an overvoltage protection device (100) may include a crowbar device (106), where the crowbar device (106) includes a first crowbar terminal (115), the first crowbar terminal (115) connected with a first external voltage line (102). The overvoltage protection device (100) may further include a transient voltage suppression (TVS) device (108), where the TVS device (108) includes a second TVS terminal (121), the second TVS terminal (121) connected with a second external voltage line (104). The crowbar device (106) and the TVS device (108) may be arranged in electrical series between the first crowbar terminal (115) and the second TVS terminal (121).

Abstract: A surge protection apparatus may include an input terminal; an output terminal, the output terminal electrically coupled to the input terminal; a ground terminal, the ground terminal electrically coupled to the input terminal and output terminal: a positive temperature coefficient (PTC) fuse, the PTC fuse connected in electrical series between the input terminal and output terminal; a crowbar device, the crowbar device electrically connected to the ground terminal and output terminal, wherein the crowbar device is in electrical series with the PTC fuse between the input terminal and ground terminal; and a central frame portion, the central frame portion electrically coupled to the input terminal, output terminal and ground terminal, wherein the crowbar device is disposed on a first side of the central frame portion and the PTC fuse is disposed on a second side of the central frame portion, opposite the first side.