Abstract: Provided is a semiconductor device that can suppress flash/burrs from forming on a lower surface of a die pad in a configuration in which the lower surface of the die pad is exposed from a sealing resin. The semiconductor device includes a lead frame, a semiconductor chip, and a sealing body. The lead frame includes a plate-shaped die pad and a lead. The die pad has one principal surface with a mounting region for mounting the semiconductor chip. The die pad includes a side portion and a frame-shaped protrusion on the side portion in top view. The protrusion overhangs in a lateral direction in an eave shape along the one principal surface. The semiconductor chip is mounted on the mounting region. The sealing body covers a side surface of the die pad while exposing the other principal surface of the die pad and sealing the semiconductor chip on the one principal surface of the die pad. The sealing body holds the die pad and the lead.

Abstract: A connector housing assembly includes a first housing having a first flange installed on a first installation panel, the first flange has a first mounting hole, a first support member installed in the first mounting hole and having a first through-hole that extends along an axial direction of the first mounting hole, a first elastic ring fitted on the first support member and radially compressed between the first support member and an inner circumferential surface of the first mounting hole, and a first connecting member passing through the first through-hole and connectable to the first installation panel. There is a first radial gap between the first support member and the inner circumferential surface of the first mounting hole when the first housing is installed on the first installation panel, allowing the first housing to float radially relative to the first connecting member.

Abstract: The methods and systems use a novel machine learning architecture, specifically a multi-tier architecture in which each tier functions to produce specific outputs that contribute to an overall diagnosis of mental health disorders based on user interactions. For example, the first tier of the machine learning model is trained to understand the words, contexts, and meanings of user inputs into a computer system. A second tier of the machine learning model is trained to provide real-time determinations of mental health disorders indirectly through the use of emotional states.

Abstract: There is provided a semiconductor device including: a first substrate and a second substrate mounted in an overlapping manner, wherein the first substrate includes: plural conductive first pads that are arranged on a substrate surface of the first substrate at intervals; plural conductive second pads that are arranged on the substrate surface at intervals; and a conductive member, and the second substrate includes: plural conductive third pads; plural conductive fourth pads; a first measurement pad that is measures whether or not the third pad is conductive with the fourth pad; and a second measurement pad that is checks whether or not the third pad is conductive with the fourth pad.

Abstract: A coil component includes a core including a winding core portion, a first flange portion, and a second flange portion, and a first wire and a second wire that are wound around the winding core portion in the same direction and that form a winding portion. The winding portion includes a second intersecting portion along a third side surface of the winding core portion at a position on the winding portion nearest to the second flange portion.

Abstract: A semiconductor device includes a circuit substrate having a semiconductor element thereon, a case surrounding a periphery of the circuit substrate so as to house the circuit substrate therein, and a lid disposed above the circuit substrate so as to close the case at an upper side thereof. The lid includes a plurality of extending portions including a first extending portion and a second extending portion, and a plurality of deformation holes respectively provided for one of the plurality of extending portions. The plurality of extending portions each extend from a lower surface of the lid facing the circuit substrate toward the circuit substrate and have a protrusion at an end thereof. The protrusion of the first extending portion protrudes in a first direction and the protrusion of the second extending portion protrudes in a second direction opposite to the first direction.

Abstract: A multilayer ceramic capacitor according to the present invention may comprise: a ceramic body comprising a plurality of dielectric layers stacked together; a lower electrode formed at the lower surface of the ceramic body; and an electrode pillar formed from the lower surface of the ceramic body toward the inner center of the ceramic body, wherein the electrode pillar comprises a first electrode pillar formed at one side of the lower surface of the ceramic body and a second electrode pillar formed at the other side of the lower surface of the ceramic body, and the first electrode pillar and the second electrode pillar form an electrode.

Abstract: A ceramic substrate according to an embodiment includes a ratio A/B of an arc discharge voltage A to a dielectric breakdown voltage B of not less than 0.3 when the arc discharge voltage A (kV) is measured when an arc discharge is detected when applying an AC voltage of 50 Hz or 60 Hz between a front surface and a back surface of the ceramic substrate at a voltage increase rate of 200 V/s, and when the dielectric breakdown voltage B (kV) between the front surface and the back surface is measured according to IEC 672-2.

Abstract: Disclosed are a positive electrode material, a preparation method of a positive electrode material, a positive electrode plate, and a battery. The positive electrode material includes a sodium-containing oxide, an angle range of a first characteristic peak of the sodium-containing oxide is less than an angle range of a second characteristic peak, the first characteristic peak is a characteristic peak of the sodium-containing oxide at an initial voltage, the second characteristic peak is a characteristic peak of the sodium-containing oxide at a cut-off voltage, and a chemical formula of the sodium-containing oxide is LixNa1-xCo1-z MzO2. M includes a metal element or a non-metal element, 0.7<x<1, and 0.001<z<0.03.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least a circuit substrate, a semiconductor die and a filling material. The circuit substrate has a first surface, a second surface opposite to the first surface and a cavity concave from the first surface. The circuit substrate includes a dielectric material and a metal floor plate embedded in the dielectric material and located below the cavity. A location of the metal floor plate corresponds to a location of the cavity. The metal floor plate is electrically floating and isolated by the dielectric material. The semiconductor die is disposed in the cavity and electrically connected with the circuit substrate. The filling material is disposed between the semiconductor die and the circuit substrate. The filling material fills the cavity and encapsulates the semiconductor die to attach the semiconductor die and the circuit substrate.

Abstract: Apparatuses and methods related to a voice recognition system, a voice recognition server and a control method of a display apparatus, are provided. More particularly, apparatuses and methods relate to a voice recognition system which performs a voice recognition function by using at least one of a current usage status with respect to the display apparatus and a function that is currently performed by the display apparatus. A voice recognition system includes: a voice receiver which receives a voice command; and a controller which determines at least one from among a current usage status with respect to a display apparatus and a function currently performed by the display apparatus, determines an operation corresponding to the received voice command by using at least one from among the determined current usage status and the function currently performed by the display apparatus, and performs the determined operation.

Abstract: A method for manufacturing a semiconductor device includes: forming a plurality of sacrificial stack portions on a semiconductor substrate, the sacrificial stack portions being spaced apart from each other; forming a metal material layer to cover the sacrificial stack portions, the metal material layer including a first metal and a second metal different from the first metal, the first metal having a reduction potential lower than that of the second metal; and annealing the metal material layer to form a self-forming barrier layer conformally covering the sacrificial stack portions, the self-forming barrier layer including a metal oxide, a metal silicide, or a combination thereof formed from the first metal by annealing.

Abstract: An imaging lens includes a light blocking sheet that includes an inner ring surface, a plurality of tapered light blocking structures, and a nanostructure layer. The inner ring surface surrounds an optical axis and defines a light passage opening. The tapered light blocking structures are disposed on the inner ring surface, and each tapered light blocking structure protrudes from the inner ring surface and tapers off towards the optical axis. The tapered light blocking structures are periodically arranged to surround the optical axis. The contour of each tapered light blocking structure has a curved part in a view along the optical axis. The curved part forms a curved surface on the inner ring surface. The nanostructure layer is disposed on the curved surface and has a plurality of ridge-like protrusions that extend non-directionally, and the average structure height of the nanostructure layer ranges from 98 nanometers to 350 nanometers.

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

Abstract: A listening device includes a housing and a circuit board assembly. The housing includes at least one sound outlet. The circuit board assembly is disposed on the housing and includes a microphone, a proximity sensing chip, and a proximity sensing pattern. The microphone and the proximity sensing chip are close to each other and are disposed in a first area of the circuit board assembly. The proximity sensing pattern is disposed in a second area of the circuit board assembly. The second area is connected to the first area. The proximity sensing pattern surrounds and is staggered with the at least one sound outlet.

Abstract: A downsized variable inductor is disclosed. The downsized variable inductor includes: a magnetic core formed in a closed loop shape, and including an air gap portion formed by partially opening the closed loop shape; a gap core inserted and fixed to the air gap portion to be integral with the magnetic core, and served to increase an inductance and a maximum current at low current of the inductor, and a coil wound and connected to the magnetic core.

Abstract: A full-bandwidth dual-sided speaker device is disclosed, including a magnetic flux guiding plate, a first and a second magnetic circuit modules, a first, a second and a third vibration assemblies. The first magnetic circuit module is disposed above the magnetic flux guiding plate, and the second magnetic circuit module is disposed under the magnetic flux guiding plate. The first vibration assembly is disposed above the first magnetic circuit module, and the second vibration assembly is disposed under the second magnetic circuit module. The third vibration assembly is disposed above the magnetic flux guiding plate, and the third vibration assembly is corresponding to above the outer side of the second magnetic circuit module. The third vibration assembly is positioned outside the first vibration assembly. The first, second and third vibration assemblies are arranged corresponding to a central axial line.

Abstract: A multilayer inductor includes a body. The body includes, within a magnetic member having a stack of magnetic layers containing iron powder, a coil including a coil conductor wound around and a through conductor that is electrically connected to the coil conductor and exposed in a bottom surface of the magnetic member. The multilayer inductor also includes an outer electrode that is on the through conductor and is electrically connected to the through conductor; and an exterior resin layer on the bottom surface of the magnetic member. The outer electrode includes protrusions that protrude perpendicular to a stacking direction of the magnetic layers in an upper end portion on a far side from the through conductor and a lower end portion on a near side from the through conductor in the stacking direction. The exterior resin layer extends across between the protrusions in the upper and lower end portions.

Abstract: The present invention relates to an air adsorbent for a micro speaker including a hydrophobic metal-organic framework, and a speaker box system including the same, wherein the air adsorbent for a micro speaker according to an embodiment of the present invention includes a metal-organic framework (MOF) and has hydrophobic properties.

Abstract: Provided is a ceramic capacitor capable of reducing the influence of deviation even when internal electrodes are misaligned. The disclosed ceramic capacitor comprises: a ceramic body; a first internal electrode disposed inside the ceramic body; and a second internal electrode disposed inside the ceramic body and surrounding the circumference of the first internal electrode while being spaced apart from the first internal electrode on the same horizontal plane as the first internal electrode.