Abstract: A method of fabricating a device includes providing a fin extending from a substrate, where the fin includes an epitaxial layer stack having a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing a portion of the epitaxial layer stack within a source/drain region of the semiconductor device to form a trench in the source/drain region that exposes lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers. After forming the trench, in some examples, the method further includes performing a dummy layer recess process to laterally etch ends of the plurality of dummy layers to form first recesses along a sidewall of the trench. In some embodiments, the method further includes conformally forming a cap layer along the exposed lateral surfaces of the plurality of semiconductor channel layers and within the first recesses.

Abstract: An example printing device comprises at least one moving module, which includes a profile assembly and a slider assembly. The profile assembly includes two guiding members that are spaced from each other, and the two guiding members respectively have a first guiding groove and a second guiding groove arranged in a preset direction. The slider assembly includes a slider body and an elastic member, where the slider body is in contact with the groove wall of the first guiding groove and is slidably connected in the preset direction; and the elastic member is fixedly connected with the slider body and is in contact with the groove wall of the second guiding groove and is slidably connected in the preset direction. The elastic member can deform to make the slider body press tightly against the corresponding guiding member, so that the printing device can improve its printing quality.

Abstract: The present disclosure provides an array substrate and a display device. The array substrate includes a base substrate and a scan line, a data line, a power supply line, a sensing line, a pixel driving circuit and a light-emitting unit that are sequentially stacked on the base substrate. The array substrate also includes a gate layer, a first conductive layer, a second conductive layer, and a third conductive layer. The first electrode of the storage capacitor is at least disposed at the first conductive layer, and the second electrode of the storage capacitor is at least disposed at the second conductive layer. The data line, the power supply line, and the sensing line are disposed at the third conductive layer.

Abstract: Nanostructure field-effect transistors (NSFETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a gate stack over the semiconductor substrate, the gate stack including a gate electrode and a gate dielectric layer; a first epitaxial source/drain region adjacent the gate stack; and a high-k dielectric layer extending between the semiconductor substrate and the first epitaxial source/drain region, the high-k dielectric layer contacting the first epitaxial source/drain region, the gate dielectric layer and the high-k dielectric layer including the same material.

Abstract: A manufacturing method of an antimicrobial and adhesion-proof titanium tableware having a contact portion for contacting foods, food ingredients, drinking water, beverages, or body parts of a user. The manufacturing method includes a preparation step implemented by using a titanium substrate to produce a tableware preform; a preparation step implemented by using a titanium substrate to produce a tableware preform; a surface treatment step implemented by washing a surface of the tableware preform and removing a primary oxidation layer on the surface of the tableware preform; and an oxidation step which includes: placing the tableware preform in a vacuum calcination furnace, heating the tableware preform to reach a temperature ranging from 700° C. to 850° C., and introducing oxygen for allowing one part of the surface of the tableware preform corresponding to the contact portion to be exposed to the oxygen for 3 hours to 12 hours.

Abstract: Provided are an ink composition, a layer prepared using the ink composition, and a display device comprising the layer, the ink composition comprising a solvent comprising (A) semiconductor nanorods, and (B) at least one diol-based compound, wherein the ink composition has a viscosity of at least 50 cps at 20° C. to 25° C. and at most 20 cps at 35° C. to 65° C.

Abstract: Provide is an annealing furnace, a method of constructing the annealing furnace, and a structure for prefabrication which make it possible to use a prefabricated construction method for the annealing furnace even in a long length. The annealing furnace includes a case, and plural rows of rolls at the top and the bottom of the inside of the case, the rolls being configured to convey a steel strip. The annealing furnace includes: horizontally parting faces where a body of the furnace can be horizontally divided, wherein each of horizontally parted sections parted by the horizontally parting faces further has vertically parting faces where the horizontally parted sections can be divided in a direction vertical to a longitudinal direction of the body.

Abstract: A system includes a processor and a memory. The processor locates a first memory chip that is faulty in a memory. After the first memory chip is isolated or replaced, the processor may reset the first memory chip when other memory chips in the memory are maintained to work normally. When a fault occurs in a memory chip in the memory, after the first memory chip that is faulty is isolated or replaced, the processor may independently reset the first memory chip without affecting the other memory chips in the memory. Resetting the first memory chip enables the first memory chip to restore to normal. A memory chip that can be normally used is used as a redundant memory chip or may continue to be used.

Abstract: A projection method and system, and an electronic device are provided. In this method, a user can drag a projection window in a remote device to a local device. For example, the user may drag the projection window in the remote device to the local device by using a mouse. The user may drag the projection window from the local device to the remote device. The user may adjust, on the local device, a size of the projection window displayed on the local device. In the technical solution provided in this application, a user operation is simple during projection.

Abstract: This application provides an antenna unit and an electronic device. A signal at a C-mode port and a signal at a D-mode port of a same loop antenna in any antenna unit are respectively excited by using two feeds, and the antenna unit is electrically symmetrically disposed, so that the signal at the C-mode port is self-cancelled at the D-mode port, and the signal at the D-mode port is self-cancelled at the C-mode port, to implement signal isolation between the two ports and interference self-cancel, and the signal at the C-mode port and the signal at the D-mode port can be complementary to each other in different radiation directions, to implement two antennas with high isolation and a low envelope correlation coefficient ECC based on the same loop antenna.

Abstract: The inventive concept relates to a neural network device, an operation method of the neural network device, and a neural network system including the neural network device, the operation method of the neural network device includes, receiving raw data from a sensor, converting the raw data to a feature map suitable for a first hidden layer among a plurality of hidden layers of a target neural network using a sensor response network adaptively trained to the sensor, inputting the feature map to the first hidden layer of the target neural network, and driving the neural network on a basis of the feature map.

Abstract: An operating method for an electronic device that communicates with a source device through a high definition multimedia interface (HDMI), includes determining whether the source device supports a multi-extended display identification data (EDID) read operation through a display data channel (DDC) and sequentially transmitting an EDID set stored in a non-volatile memory to the source device using an EDID group corresponding to a size of a cache memory, as a transmission unit, based on a size of the EDID set and the size of the cache memory, when it is determined that the multi-EDID read operation is supported.

Abstract: An electronic apparatus is provided. The electronic apparatus includes a communication interface, a memory, and a processor, wherein the processor is configured to acquire a user command from the user and control the communication interface to transmit the user command to a plurality of external devices, receive information on a first question generated based on the user command and information on first response to the generated first question acquired from users of each of the plurality of external devices, identify whether there a conflict between each first response occurs, acquire information on a subject to be re-questioned, control the communication interface to transmit information on the conflict to at least one external device identified, receive information on a second response to a second question generated, and acquire a final response based on the information on the first response and the information on the second response and output the final response.

Abstract: A cutting tool (1) formed of a silicon nitride-based sintered body (2) including a matrix phase (3), a hard phase (4), and a grain boundary phase (10) in which a glass phase (11) and a crystal phase (12) exist. The sintered body (2) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase (4) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2? ranging from 25° to 35° in an internal region of the sintered body (2). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11?B/A?0.40 . . . Expression (1) in a surface region of the sintered body (2), and satisfies 0.00?B/A?0.10 . . . Expression (2) in the internal region of the sintered body (2).

Abstract: There is provided a method of automated defects' classification, and a system thereof. The method comprises obtaining data informative of a set of defects' physical attributes usable to distinguish between defects of different classes among the plurality of classes; training a first machine learning model to generate, for the given defect, a multi-label output vector informative of values of the physical attributes, thereby generating for the given defect a multi-label descriptor; and using the trained first machine learning model to generate multi-label descriptors of the defects in the specimen. The method can further comprise obtaining data informative of multi-label data sets, each data set being uniquely indicative of a respective class of the plurality of classes and comprising a unique set of values of the physical attributes; and classifying defects in the specimen by matching respectively generated multi-label descriptors of the defects to the multi-label data sets.

Abstract: Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

Abstract: An embodiment relates to an immersive couch, and more particularly to an immersive couch configured to be movable in three degrees of freedom using a concise and simple mechanism for moving an inflatable body, thereby not only improving convenience in use, safety, handling, storability, and maintainability, but also reducing manufacturing costs, operating costs, and maintenance costs. The immersive couch includes: a couch body formed as an inflatable body; a holding unit installed on the couch body; an actuation connecting member including one end connected to the holding unit; a rotary body connected to wind and unwind the actuation connecting member; a rotary body actuator rotating the rotary body forwards and backwards; and a controller controlling operations of the rotary body actuator.

Abstract: Provided is a semiconductor package having improved signal integrity (SI) and a chip stack structure of a plurality of semiconductor chips. The semiconductor package includes a package substrate, a chip stack structure on the package substrate and including at least two semiconductor chips, and an external connection terminal on a lower surface of the package substrate. A first semiconductor chip arranged uppermost in the chip stack structure is connected to a first bonding pad of the package substrate through a first wire. A second semiconductor chip arranged under the first semiconductor chip in the chip stack structure is connected to a second bonding pad of the package substrate through a second wire. When the first bonding pad is farther from the external connection terminal than the second bonding pad, the external connection terminal is connected to the first bonding pad through a wiring line of the package substrate.