Abstract: A light source including an LED may be tuned to increase or decrease color uniformity throughout the device, such as at an edge of the light source, and/or improve contrast with less lumen loss. Tuning may include spectral tuning such as modification of the optical barrier and/or side coat surrounding the LED. The modification may include one or more of a dye, scattering particles, or luminescent material. The spectral tuning may increase output of light of a certain wavelength while decreasing output of light of another wavelength, due to increased reflection or emission of the former and increased absorption of the latter.

Abstract: Light emitting diode (LED) arrays and dies and devices herein comprise: a plurality of pixels in electrical communication including a cathode per pixel and a common composite anode. Each pixel communicates to the common anode by a p-metal plug in a p-via, a p-metal layer, and p-contact materials.

Abstract: A lighting device and method of manufacturing a lighting device that improves the efficiency of converting light output by a light emitting diode (LED) to near-infrared light (NIR). To improve the efficiency, light emitted by the LED passes through a first phosphor layer that emits NIR light, and then the light passes through a second phosphor layer that absorbs light not absorbed by the first layer to generate additional light. In some instances, the additional light is in the visible spectrum.

Abstract: Lighting modules combining top-contact LEDs and surface mount LEDs are described. The top-contact LEDs are mounted directly to a heat sink and are electrically connected by ultrasonically bonded conductors to a PCB containing the surface mount LEDs. The modules may also comprise a lens assembly configured to combine light emitted by the top contact LEDs and the surface mount LEDs into a composite beam.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical layer disposed on the current spreading layer, the optical layer comprising: an optical segment opposite the n-type layer and the first dielectric material, the optical segment comprising a second dielectric material, and a reflective sidewall adjacent to the optical segment and opposite portions of the one or more n-contact materials; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A method for controlling light sources of a lighting system includes initializing a measurement device for measuring information in the lighting system. Photometric data is recorded at a first location, and the measurement records photometric data at a second location. Target illuminance in the system is set at the first and second locations, and flux values for lighting elements of the lighting system are calculated. Control parameters are transmitted based upon the flux for adjustment of the elements in the lighting system.

Abstract: LED devices and methods of operating them are described. An LED lighting device includes a substrate (702), a white LED (402) on the substrate at a location configured for alignment with an optical axis of an automotive lamp when installed, and a near ultraviolet LED (404) on the substrate at a location spaced apart from the white LED by an amount such that the near ultraviolet LED is defocused from the optical axis of the automotive lamp when installed such that the near ultraviolet LED emits energy in the near ultraviolet band in a larger area than the white LED when powered on.

Abstract: Provided is a tunnel junction based RGB die and driving scheme. The ?LED die of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the ?LED die of one or more embodiments allows for better control of emission color than in known RGB technologies. A red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer. A driving scheme is provided that includes a single current source per RGB pixel. This is enabled by way of using PWM switches and a proper selection of the active region area per active region color.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a patterned feature in the mesa defined by an absence of an epitaxial material from the mesa; a first dielectric material surrounding the sidewall of the pixel; one or more n-contact materials and a common cathode in electrical contact with the n-type layer; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer, a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical coating disposed on the current spreading layer, the optical coating comprising a second dielectric material; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A lighting system and method of driving an array of micro light emitter (microLED) pixels are disclosed. Each pixel contains a blue sub-pixel configured to emit blue light, a red sub-pixel configured to emit red light, a green sub-pixel configured to emit green light, and a yellow sub-pixel configured to emit yellow light. A processor selects, for each pixel to produce white light, between driving the blue sub-pixel and yellow sub-pixel to produce the white light and driving the blue sub-pixel, the red sub-pixel, the green sub-pixel, and the yellow sub-pixel to produce the white light.

Abstract: Lighting devices, lens arrays, and method of manufacture are described herein. A lighting device includes an LED array that includes rows and columns of light-emitting diode (LED) dies on a common substrate. A lens array is disposed over the array of LED dies. The lens array includes multiple lenses, each having a bullet-shaped cross-section and disposed over a respective row of the LED dies in the LED array such that an invariant axis of each of the lenses is aligned along the row of LEDs and an axis of periodicity of the lenses is perpendicular to the invariant axis.

Abstract: A light emitting structure includes one or more optical barriers which may have some gaps or discontinuity in order to decrease the amount of light absorbed by the optical barrier. The optical barrier may have a gap in the vertical direction between it and the substrate, or between it and the top of a side coat, or both. The optical barrier may have a gap or discontinuity in the horizontally direction, so that it does not fully surround the LED or phosphor horizontally. This may increase the light extraction efficiency of the light emitting structure.

Abstract: A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.

Abstract: LED packages, wafers of LED dies and methods of manufacture are described. An LED package includes an LED die. The LED die includes a light-emitting semiconductor stack, which has a light-emitting top surface, a bottom surface opposite the light-emitting top surface, and at least one side surface. The light-emitting semiconductor stack is configured to emit pump light through the light-emitting top surface when powered on. First and second solder pads are disposed on the bottom surface of the light-emitting semiconductor stack and are electrically coupled to the semiconductor stack. A silicone wavelength converter is provided over the light-emitting top surface of the LED die. A first silicone material surrounds the side surfaces of the light-emitting semiconductor stack. A second silicone material is disposed under the LED die and surrounding the first and second solder pads. The second silicone material is harder than the first silicone material.

Abstract: Light emitting devices, hybridized devices, and methods of manufacture are described herein. A lighting device includes a semiconductor die. The semiconductor die includes rows and columns of light-emitting segments separated via trenches, and each of the light-emitting segments has a p-type region and an n-type region. The device also includes at least one first electrical contact per row electrically coupled to the p-type region or the n-type region of each of the light-emitting segments in the corresponding row. The device also includes at least one second electrical contact per column electrically coupled to the p-type region or the n-type region of each of the light-emitting segments in the corresponding row. The first and second electrical contacts receive a bias voltage to power on individual light-emitting segments in the semiconductor die by row and column.

Abstract: Light emitting devices and methods of operation are described herein. A lighting device includes a semiconductor die, which has rows and columns of light-emitting segments separated from one another via trenches, at least one p- or n-type contact per row, and at least one p- or n-type contact per column. The lighting device also includes a driver and a controller. The controller controls the driver to display an image on the semiconductor die by applying a bias voltage to select p- and n-type contacts corresponding to light-emitting segments that form the image.

Abstract: An LED may be tuned by thermal effects through the contacts attached to the semiconductor regions. The contacts may have gaps or voids between or within them to create nonuniformity in the thermal distribution of the semiconductor regions, which will in turn increase or decrease luminance output at those spots. The contacts may be actively heated or cooled to further affect the temperature of the semiconductor regions nearest the contacts. The layout of the contacts may be chosen to produce a fully addressable LED with precise luminance tuning.

Abstract: A lens comprises a base and a head where the base may have one or more side walls with a straight cross-section and the head may have one or more surfaces with a curved cross-section forming an apex at the top of the lens with an effective radius of curvature. The base thickness, the total thickness of the lens, and/or the effective radius of curvature may be tuned to improve emission directionality and/or light extraction efficiency of an LED over which the lens is disposed. Individual ones of the lens may be disposed over individual LEDs in an array. To reduce crosstalk.

Abstract: Methods and apparatus are described herein. A lighting device includes a silicon body and a common electrical terminal. The silicon body includes first and second light emitting regions. The first light emitting region is above the second light emitting region and emits light having a different color than the first light emitting region when powered on. The common electrical terminal is electrically coupled to both the first light emitting region and the second light emitting region. The common electrical terminal has a step-shaped cross-section including a bottom surface and a first step shaped section above the bottom surface. The first step shaped section has a first horizontal contacting area and a riser portion between the bottom surface and the first horizontal contacting area. The riser portion is completely covered in a dielectric material. The horizontal contacting area and the bottom surface are at least partially exposed from the dielectric material.