Abstract: An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

Abstract: Light sources including one or more light emitting diodes (LEDs) comprise: a primary down converter material on the one or more LEDs; and a roughened down converter material on the one or more LEDs. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: measuring a baseline color point distribution of a baseline light source, and a primary down converter material in the absence of any laser-modified down converter material; preparing a baseline color point distribution graph; identifying one or more sections of the primary down converter material whose corresponding LEDs contribute to deviating from a tuned color point distribution; and applying a roughening laser treatment to prepare one or more sections of roughened down converter material, and thereby prepare a light source having the tuned color point distribution.

Abstract: Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.

Abstract: Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.

Abstract: A microlens array comprises an array of microlenses on a flat base. A spacer located along the periphery of the microlens array protrudes away from the plane of the base. The microlens array may be arranged in combination with one or more LEDs or pcLEDs with the spacer positioned between the microlens array and the LEDs or pcLEDs and thus spacing the microlenses away from the LED or pcLEDs. Arranged in this manner, the surface of the microlens array facing the LEDs or pcLEDs and light emitting surfaces of the LEDs or pcLEDs together define an air filled or evacuated gap between the microlens array and the LEDs or pcLEDs, which improves the performance of the microlens array in collimating or partially collimating light emitted by the LEDs or pcLEDs.

Abstract: A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer.

Abstract: An inventive apparatus includes a substrate and a set of multiple electrically conductive traces. The substrate is transparent or reflective for visible light. The electrically conductive traces are sufficiently transparent, or are less than 200 ?m wide and occupy less than 25% of an areal extent of the set, so as to enable visual observation of a scene through or reflected by the substrate along a sight line that passes through the set of electrically conductive traces.

Abstract: A laterally heterogenous wavelength-converting optical element includes pixel regions surrounded by border regions; each includes down-converting phosphor particles bound by a coating or solid medium. The pixel regions are aligned with LEDs of an array. The phosphor regions differ with respect to one or more of compositions, particle sizes, coating thicknesses, refractive indices, or voids (size, number density, or volume fraction). Those difference(s) can result in the border regions exhibiting larger optical scattering, which can improve contrast of down-converted light emitted by adjacent pixels of the array.

Abstract: The invention generally relates to a catheter sterilization system using semiconductor light emitting devices (LEDs) to sterilize the lumen of a catheter. The sterilization system may include a sterilization head with attached semiconductor LEDs sized for insertion into the catheter. The sterilization head is connected to the linearly extending connector allowing an operator to move the sterilization head through the catheter. The sterilization system may alternatively include microLEDs attached to the inner sidewalls of the catheter to sterilize the lumen of the catheter.

Abstract: A light source useful for architectural lighting, general lighting, street lighting, or other lighting applications includes a plurality of light emitting diodes. A least some light emitting diodes can be sized between 30 microns and 500 microns. A plurality of micro-optics sized less than 1 millimeter are positioned over at least some of the plurality of light emitting diodes. A controller may be connected to selectively power groups of the plurality of light emitting diodes to provide different light beam patterns.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?c. Active-layer output light incident on the redirection layer at an incidence angle greater than ?c is redirected to propagate toward the front surface at an incidence angle that is less than ?c. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?c, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: A glare free LED retrofit lamp, automotive lighting system and method of assembly are described herein. The glare free LED retrofit lamp includes a referencing ring and a lamp body at least partially in an opening in the referencing ring. A first LED is disposed on a first surface of the lamp body, and a second LED is disposed on a second surface of the lamp body opposite the first surface. The first LED is configured to emit light having a higher color temperature when powered on than light emitted by the second LED when powered on.

Abstract: Lighting devices and methods of manufacture are described. A lighting device includes a substrate, multiple light-emitting diodes (LEDs) on the substrate, an electronic switch on the substrate, and multiple connectors, each comprising a wire bond. Multiple wire bonds electrically couple at least two of the multiple LEDs and multiple wire bonds electrically couple the electronic switch and at least one of the plurality of LEDs.

Abstract: A light engine with distinct light sources sharing at least one optic may employ scattering particles to change the illuminance line profiles of one or more of the light sources so that they are more uniformly mixed in the far-field. The scattering particles may be integrated into phosphor layers of specific light sources or may be disposed in a separate layer. The scattering particles may be tunable based on the particular characteristics of the light source, such as their spectral characteristics or their chemical mixing characteristics.

Abstract: A lighting device and a method of manufacturing a lighting device are described. The lighting device includes a heat sink having a mounting area. A main board is mounted to the mounting area of the heat sink, the main board including a recess. A light-emitting diode (LED) assembly is mounted to the mounting area within the recess of the main board. The LED assembly includes at least one emitter. Electrical circuitry is disposed on the top surface of the main board, which is configured to control the at least one emitter of the LED assembly. An electrical connection is provided between the LED assembly and the electrical circuitry.

Abstract: A light-emitting device includes: a semiconductor diode structure, a reflector, a wavelength-converting layer, and an intermediate spacer between the diode structure and the wavelength-converting layer. The diode structure emits diode output light at a vacuum wavelength ?0 to propagate within the diode structure. The reflector is on the back diode structure and internally reflects diode internally incident output light. The wavelength-converting layer is positioned with its back surface facing and spaced-apart from a front surface of the diode structure, and absorbs diode output light at ?0 and emits down-converted light at a vacuum wavelength ?1>?0, which exits the wavelength-converting layer through its front surface.

Abstract: A phosphor layer is attached to an LED with increased precision. In particular, a phosphor ceramic is attached to an LED with glue. During the attachment process, the glue must be hardened and/or cured. The phosphor ceramic includes a hood that contains the glue in the hood as it hardens and/or is cured in order that the phosphor ceramic is properly aligned on the LED. The hood also improves the light extraction by capturing the light emitted from the sides of the LED.

Abstract: This specification discloses spinel-type phosphors that may be advantageously employed in light sources for medical optical coherence tomography (OCT), light sources for medical OCT comprising such phosphors, and OCT systems comprising such light sources.

Abstract: A LED controller for an LED pixel array includes an image frame buffer to receive image data and a standby image buffer connected to the image frame buffer to hold a standby image. A command and control module connected is configured to substitute the standby image in the standby image buffer for the image in the image frame buffer when image data is unavailable.

Abstract: Micro-light emitting diode (uLED) devices comprise: a source wafer comprising a uLED die bonded to a target wafer. Wafer n-contacts are directly bonded to a plurality of die n-contacts; wafer p-contacts are directly bonded to die p-contacts; and wafer dielectric material is directly bonded to die dielectric material; the wafer dielectric material isolates the wafer n-contacts and the wafer p-contacts.