Abstract: Methods and apparatus are described herein. A lighting device includes a silicon body and a common electrical terminal. The silicon body includes first and second light emitting regions. The first light emitting region is above the second light emitting region and emits light having a different color than the first light emitting region when powered on. The common electrical terminal is electrically coupled to both the first light emitting region and the second light emitting region. The common electrical terminal has a step-shaped cross-section including a bottom surface and a first step shaped section above the bottom surface. The first step shaped section has a first horizontal contacting area and a riser portion between the bottom surface and the first horizontal contacting area. The riser portion is completely covered in a dielectric material. The horizontal contacting area and the bottom surface are at least partially exposed from the dielectric material.

Abstract: An LED or microLED light source with multiple light-emitting diode stacks separated by tunnel junction(s). The diode stacks of the light source are independently addressable leading to a light source with high light output range.

Abstract: A light emitting device includes four primary light sources, the first light source emits light with an emission spectrum having a first peak in a wavelength in a range of 420-440 nm and a second peak in a wavelength range of 530-580 nm, the second light source emits light with an emission spectrum having a peak in a wavelength in a range of 470-500 nm, the third light source emits light with an emission spectrum having a peak in a wavelength range of 530-580 nm, and the fourth light source emits light with an emission spectrum having a peak in a wavelength range of 580-660 nm.

Abstract: A lens comprises a base and a head where the base may have one or more side walls with a straight cross-section and the head may have one or more surfaces with a curved cross-section forming an apex at the top of the lens with an effective radius of curvature. The base thickness, the total thickness of the lens, and/or the effective radius of curvature may be tuned to improve emission directionality and/or light extraction efficiency of an LED over which the lens is disposed. Individual ones of the lens may be disposed over individual LEDs in an array. To reduce crosstalk.

Abstract: A method of manufacturing a light emitting diode (LED) headlight unit that includes an integrally molded heat sink, LED module, and optics component. The method of manufacturing includes injection molding the heat sink that incorporates the LED module in a first injection molding step and then forming the optics component on the top surface of the heatsink in a second injection molding step. In an alternative method of manufacturing the LED headlight unit with the integrally molded heat sink, LED module, and optics component, the optics component is molded first, and the heat sink is molded onto the bottom surface of the optics component, thereby integrating the LED module into the heat sink.

Abstract: A wearable optical display assembly includes an array of light-emitting elements arranged as a display device, and one or more optical elements arranged as a magnification system. The array is positioned at a predetermined viewing distance from an eye of a user wearing the optical display assembly. The array has an unmagnified element spacing; the magnification system forms a magnified image of the array that can be seen by the user with a magnified element spacing larger than the unmagnified element spacing. The magnified element spacing is no smaller than spatial resolution of at least a portion of the eye of the user at the predetermined viewing distance. In some instances, the magnified element spacing can subtend an angle no smaller than 1 arcminute at the predetermined viewing distance.

Abstract: A light-emitting apparatus includes a light emitting device, a set of transmissive optical elements, and a side wall coating layer forming a rigid spacer. The set of optical elements is positioned with its back optics surface facing and spaced apart from the front device surface. Device output light emitted from light-emitting areas of the front device surface propagates to and through the optical elements. The space between the front device surface and the back optics surface, through which the device output light propagates, is either evacuated or filled with ambient air or inert gas. The side wall coating layer, on side surfaces of the light-emitting device or on side surfaces of multiple light-emitting elements thereof, extends beyond the front device surface to form the spacer, which leaves unobstructed at least portions of the one or more light-emitting areas of the front device surface.

Abstract: A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extend to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact, reducing non-radiative recombination at the side surfaces. The LEDs include a front reflector with a central opening at least partly aligned with the anode contact. The LED can include front or back sets of nanostructured optical elements.

Abstract: A first luminescent material having peak emission wavelengths in the range of 1600-1900 nm comprises a Cr3+ and Tm3+ co-doped garnet phosphor having the general formula (Gd3-u-yTmyREu) [Ga2-a-b-d-eLuaCrbScd Ale]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Ho, Er, Ce, Lu, Sc and 0?u?2, 0<y?1.5, 0?a?1, 0<b?0.3, 0?c?3, 0?d?0.5, 0?e?1.8. A second luminescent material having peak emission wavelengths in the range of 1400-1600 nm comprises a Cr3+ and Ni2+ co-doped garnet phosphor having the general formula (Gd3-uREu) [Ga2-a-b-d-eNiaCrbLd Ale]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Ho, Er, Ce, Lu, Tm, Sc and L=Ti, Zr, Hf, Sn, Ge, Si and 0?u?2, 0<a?0.1, 0<b?0.3, 0<b?3, 0?c?0.15, 0?e?2. A light source comprises the first and second luminescent materials and one or more semiconductor light emitting diodes arranged to excite luminescence from the luminescent materials to provide short wavelength infrared emission over the range 1300-2000 nm.

Abstract: A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The active layer extends to the side surfaces of the LED; the anode contact is on a central area of the p-doped layer and leaves peripheral regions without direct electrical coupling to the anode contact. A back dielectric layer on peripheral portions of the anode contact surface that lack direct electrical coupling to the anode electrical contact includes a central portion opposite at least the central area of the anode contact surface. That protruding central portion protrudes away from the anode contact surface, has a tapered shape, and redirects a portion of light propagating from the active layer through the anode contact surface to propagate back through the anode contact surface toward the light-exit surface.

Abstract: A LED light source includes a frame with side walls having reflective interior surfaces that define sides of an internal cavity. The frame may be placed above an LED array to contain the light of the array. One or more light transmitting layers may be placed above the frame to further or maintain containment of the light and/or to support an optical element above the frame. The optical element may direct the light of the LED array to provide a narrowed radiation pattern that may be advantageously employed for backlighting LCOS and other displays.

Abstract: Provided is a monolithic active matrix pixel with a polychromatic RGB micro-LED and field effect transistors (FET) on the same epitaxial wafer. The field effect transistors are gallium nitride (GaN)-based. The polychromatic RGB micro-LED is formed on a transistor channel layer on the epitaxial wafer. The polychromatic RGB micro-LED has four electrode terminals, one of which is a common anode or a common cathode.

Abstract: An amber emitting nitride ceramic phosphor may be directly sintered under pressure to improve the resulting compositional gradient. As a result mechanical thinning of the ceramic is less necessary. The ceramic also comes out more chemically stable, allowing for the example the application of a dichroic layer which can improve color point in the final light emitting device. The inventive process is cheaper than conventional production methods and may results in a phosphor with better quantum efficiency.

Abstract: Provided is an LED (100) comprised of an epitaxial stack having two active regions (106a, 106b) separated by a tunnel junction (108). A red converting element (112) may be added selectively to pixels during device isolation/processing to create an array of pixels that can be controlled to be blue or green or a mix of the two, and other pixels that use the blue or green active regions to pump the red converting element (112) to stimulate red emission from this specific pixel area. An alternative can be during device processing to selectively remove the topmost active region (green or blue) and replace that with a red converting material. This could permit a coplanar final structure.

Abstract: A light emitting device with a composite contact prevents performance degradation caused during laser lift off. The composite contact includes a transparent and conductive layer absorbing the laser to prevent it from reaching the metal trench while serving as a current spreading layer, and includes one or more other layers such as a dielectric spacer preventing optical loss, and a thin contact layer providing better contact with the metal trench than the transparent conductive layer might by itself.

Abstract: An LED light source to produce a more Lambertian radiation pattern having a microLED die where the side walls of the die are reflective and sloped at a greater than 20 degrees angle and where the top surface of the LED die is roughened. Scattering particles may also be placed on the top emitting surface of the microLED. An optical element with roughened surfaces may be placed above the microLED die. The microLED die may also be placed in a cup structure with reflective side walls.

Abstract: An LED includes first/second doped layers with active region(s) therebetween emitting a first wavelength, and is arranged in a vertical die geometry with a reflective first electrical contact on a first LED surface. A wavelength converter absorbs the first wavelength and emits a second, longer wavelength. Some examples include a transparent second electrical contact on a second LED surface or angled LED sidewalls, and the wavelength converter is on the LED surface and the angled LED sidewalls. Some other examples include a second electrode on LED side surfaces extending beyond a second LED surface to form a cavity, with the wavelength converter on the second LED surface at least partly filling the cavity.

Abstract: An LED includes first/second doped layers with active region(s) therebetween emitting a first wavelength, and is arranged in a flip chip geometry with reflective layer(s) on a first LED surface. A wavelength converter facing a second LED surface absorbs the first wavelength and emits a second, longer wavelength. In some examples, the wavelength converter is on the LED surface and angled sidewalls. In some other examples, the wavelength converter is on the surface and angled sidewalls of a dielectric medium on the second LED surface. In still other examples, the LED can include on the first LED surface a mesa with the active region(s) and one of the doped layers, with angled LED and mesa sidewalls. The wavelength converter is on the LED surface and reflective layer(s) are on the LED sidewalls.

Abstract: A headlighting system is provided. The headlighting system includes a plate. The headlighting system includes a reference plane. The headlighting system includes light emitting diode filaments. The light emitting diode filaments are on the plate. The light emitting diode filaments are on the plate at reference positions. The reference positions are set at distances from the reference plane.

Abstract: An LED die, a wafer of LED dies, and methods of manufacture are described. A shaped surface luminance wavelength converter platelet includes a first wavelength converting layer, which has a first concentration of scattering pores. A second wavelength converting layer is disposed over the first wavelength converting layer and has a second concentration of scattering pores with the second concentration of scattering pores being larger than the first concentration of scattering pores.