Abstract: A surface mount electrical connector comprises a housing comprising at least first and second elongate housing portions. Each elongate housing portion extends longitudinally from a first end of the housing to an opposing second end of the housing. The first elongate housing portion comprises an opening at the first end of the housing and a wall portion at the second end of the housing. The second elongate housing portion comprises an opening at the opposing second end of the housing, and a wall portion at the first end of the housing.

Abstract: A light-emitting device includes red InGaN-based LED(s), green III-nitride-based LED(s), and blue III-nitride-based LED(s), which respectively emit red emitted light, green emitted light, and blue emitted light. Spectrally selective optical element(s), on which at least the red emitted light is incident, result in red output light having a red output color point, green output light having a green output color point, and blue output light having a blue output color point. The red, green, and blue output color points define a color gamut that encompasses at least an sRGB color gamut, in some examples even when corresponding color points of the red, green, and blue emitted light do not.

Abstract: A microlight emitting diode (LED) system and method of transmitting data are disclosed. The system includes either a first array that contains multiple subarrays or a second array. Each subarray includes multiple independently-addressable single color microLEDs that emit light of different colors and are independently modulated for data communication to another microLED array. The second array contains at least one independently-addressable polychromic microLED. Each polychromic microLED has multiple independently-addressable active regions that emit different colors and that are independently modulated for data transmission to the other microLED array. A photodetector array receives data as multi-color light from the other microLED array and has multiple photodetectors each tuned for a specific color.

Abstract: A light emitting diode (LED) device sapphire substrate removal apparatus and method are disclosed. The method includes placing the LED device comprising a sapphire substrate and a carrier onto a holding plate sized and shaped to hold the carrier of the LED device and applying a twisting force to the sapphire substrate to separate the sapphire substrate from the carrier. The apparatus includes the holding plate and a sapphire substrate removal tool.

Abstract: A light emitting diode (LED) device sapphire substrate removal apparatus and method are disclosed. The apparatus and method includes placing the LED device comprising a sapphire substrate and a carrier onto holding stage sized and shaped to hold the carrier of an LED device and applying suction cups to the sapphire substrate to separate the sapphire substrate from the carrier. The apparatus include the holding stage and a sapphire substrate suction device.

Abstract: A light source including an LED may be tuned to increase or decrease color uniformity throughout the device, such as at an edge of the light source, and/or improve contrast with less lumen loss. Tuning may include spectral tuning such as modification of the optical barrier and/or side coat surrounding the LED. The modification may include one or more of a dye, scattering particles, or luminescent material. The spectral tuning may increase output of light of a certain wavelength while decreasing output of light of another wavelength, due to increased reflection or emission of the former and increased absorption of the latter.

Abstract: Light emitting diode (LED) arrays and dies and devices herein comprise: a plurality of pixels in electrical communication including a cathode per pixel and a common composite anode. Each pixel communicates to the common anode by a p-metal plug in a p-via, a p-metal layer, and p-contact materials.

Abstract: A lighting device and method of manufacturing a lighting device that improves the efficiency of converting light output by a light emitting diode (LED) to near-infrared light (NIR). To improve the efficiency, light emitted by the LED passes through a first phosphor layer that emits NIR light, and then the light passes through a second phosphor layer that absorbs light not absorbed by the first layer to generate additional light. In some instances, the additional light is in the visible spectrum.

Abstract: Lighting modules combining top-contact LEDs and surface mount LEDs are described. The top-contact LEDs are mounted directly to a heat sink and are electrically connected by ultrasonically bonded conductors to a PCB containing the surface mount LEDs. The modules may also comprise a lens assembly configured to combine light emitted by the top contact LEDs and the surface mount LEDs into a composite beam.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical layer disposed on the current spreading layer, the optical layer comprising: an optical segment opposite the n-type layer and the first dielectric material, the optical segment comprising a second dielectric material, and a reflective sidewall adjacent to the optical segment and opposite portions of the one or more n-contact materials; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A method for controlling light sources of a lighting system includes initializing a measurement device for measuring information in the lighting system. Photometric data is recorded at a first location, and the measurement records photometric data at a second location. Target illuminance in the system is set at the first and second locations, and flux values for lighting elements of the lighting system are calculated. Control parameters are transmitted based upon the flux for adjustment of the elements in the lighting system.

Abstract: LED devices and methods of operating them are described. An LED lighting device includes a substrate (702), a white LED (402) on the substrate at a location configured for alignment with an optical axis of an automotive lamp when installed, and a near ultraviolet LED (404) on the substrate at a location spaced apart from the white LED by an amount such that the near ultraviolet LED is defocused from the optical axis of the automotive lamp when installed such that the near ultraviolet LED emits energy in the near ultraviolet band in a larger area than the white LED when powered on.

Abstract: Provided is a tunnel junction based RGB die and driving scheme. The ?LED die of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the ?LED die of one or more embodiments allows for better control of emission color than in known RGB technologies. A red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer. A driving scheme is provided that includes a single current source per RGB pixel. This is enabled by way of using PWM switches and a proper selection of the active region area per active region color.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having sidewall, the mesa including an n-type layer, an active region, and a p-type layer; a patterned feature in the mesa defined by an absence of an epitaxial material from the mesa; a first dielectric material surrounding the sidewall of the pixel; one or more n-contact materials and a common cathode in electrical contact with the n-type layer; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A micro-light emitting diode (uLED) comprises: a pixel defined by a mesa of semiconductor layers having a sidewall, the mesa including an n-type layer, an active region, and a p-type layer, a first dielectric material surrounding the sidewall of the pixel; a current spreading layer in contact with one or more n-contact materials and the n-type layer; an optical coating disposed on the current spreading layer, the optical coating comprising a second dielectric material; and an anode in contact with the p-type layer. MicroLED dies and devices comprising the uLEDs and method of making the same are also provided.

Abstract: A lighting system and method of driving an array of micro light emitter (microLED) pixels are disclosed. Each pixel contains a blue sub-pixel configured to emit blue light, a red sub-pixel configured to emit red light, a green sub-pixel configured to emit green light, and a yellow sub-pixel configured to emit yellow light. A processor selects, for each pixel to produce white light, between driving the blue sub-pixel and yellow sub-pixel to produce the white light and driving the blue sub-pixel, the red sub-pixel, the green sub-pixel, and the yellow sub-pixel to produce the white light.

Abstract: Lighting devices, lens arrays, and method of manufacture are described herein. A lighting device includes an LED array that includes rows and columns of light-emitting diode (LED) dies on a common substrate. A lens array is disposed over the array of LED dies. The lens array includes multiple lenses, each having a bullet-shaped cross-section and disposed over a respective row of the LED dies in the LED array such that an invariant axis of each of the lenses is aligned along the row of LEDs and an axis of periodicity of the lenses is perpendicular to the invariant axis.

Abstract: A light emitting structure includes one or more optical barriers which may have some gaps or discontinuity in order to decrease the amount of light absorbed by the optical barrier. The optical barrier may have a gap in the vertical direction between it and the substrate, or between it and the top of a side coat, or both. The optical barrier may have a gap or discontinuity in the horizontally direction, so that it does not fully surround the LED or phosphor horizontally. This may increase the light extraction efficiency of the light emitting structure.

Abstract: A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.

Abstract: LED packages, wafers of LED dies and methods of manufacture are described. An LED package includes an LED die. The LED die includes a light-emitting semiconductor stack, which has a light-emitting top surface, a bottom surface opposite the light-emitting top surface, and at least one side surface. The light-emitting semiconductor stack is configured to emit pump light through the light-emitting top surface when powered on. First and second solder pads are disposed on the bottom surface of the light-emitting semiconductor stack and are electrically coupled to the semiconductor stack. A silicone wavelength converter is provided over the light-emitting top surface of the LED die. A first silicone material surrounds the side surfaces of the light-emitting semiconductor stack. A second silicone material is disposed under the LED die and surrounding the first and second solder pads. The second silicone material is harder than the first silicone material.