Abstract: An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

Abstract: Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.

Abstract: Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.

Abstract: A laterally heterogenous wavelength-converting optical element includes pixel regions surrounded by border regions; each includes down-converting phosphor particles bound by a coating or solid medium. The pixel regions are aligned with LEDs of an array. The phosphor regions differ with respect to one or more of compositions, particle sizes, coating thicknesses, refractive indices, or voids (size, number density, or volume fraction). Those difference(s) can result in the border regions exhibiting larger optical scattering, which can improve contrast of down-converted light emitted by adjacent pixels of the array.

Abstract: An inventive apparatus includes a substrate and a set of multiple electrically conductive traces. The substrate is transparent or reflective for visible light. The electrically conductive traces are sufficiently transparent, or are less than 200 ?m wide and occupy less than 25% of an areal extent of the set, so as to enable visual observation of a scene through or reflected by the substrate along a sight line that passes through the set of electrically conductive traces.

Abstract: A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer.

Abstract: The invention generally relates to a catheter sterilization system using semiconductor light emitting devices (LEDs) to sterilize the lumen of a catheter. The sterilization system may include a sterilization head with attached semiconductor LEDs sized for insertion into the catheter. The sterilization head is connected to the linearly extending connector allowing an operator to move the sterilization head through the catheter. The sterilization system may alternatively include microLEDs attached to the inner sidewalls of the catheter to sterilize the lumen of the catheter.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?c. Active-layer output light incident on the redirection layer at an incidence angle greater than ?c is redirected to propagate toward the front surface at an incidence angle that is less than ?c. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?c, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: A light source useful for architectural lighting, general lighting, street lighting, or other lighting applications includes a plurality of light emitting diodes. A least some light emitting diodes can be sized between 30 microns and 500 microns. A plurality of micro-optics sized less than 1 millimeter are positioned over at least some of the plurality of light emitting diodes. A controller may be connected to selectively power groups of the plurality of light emitting diodes to provide different light beam patterns.

Abstract: A light engine with distinct light sources sharing at least one optic may employ scattering particles to change the illuminance line profiles of one or more of the light sources so that they are more uniformly mixed in the far-field. The scattering particles may be integrated into phosphor layers of specific light sources or may be disposed in a separate layer. The scattering particles may be tunable based on the particular characteristics of the light source, such as their spectral characteristics or their chemical mixing characteristics.

Abstract: A light-emitting device includes: a semiconductor diode structure, a reflector, a wavelength-converting layer, and an intermediate spacer between the diode structure and the wavelength-converting layer. The diode structure emits diode output light at a vacuum wavelength ?0 to propagate within the diode structure. The reflector is on the back diode structure and internally reflects diode internally incident output light. The wavelength-converting layer is positioned with its back surface facing and spaced-apart from a front surface of the diode structure, and absorbs diode output light at ?0 and emits down-converted light at a vacuum wavelength ?1>?0, which exits the wavelength-converting layer through its front surface.

Abstract: A LED controller for an LED pixel array includes an image frame buffer to receive image data and a standby image buffer connected to the image frame buffer to hold a standby image. A command and control module connected is configured to substitute the standby image in the standby image buffer for the image in the image frame buffer when image data is unavailable.

Abstract: Light emitting devices comprise: one or more light emitting diode (LED) dies in a reflector cup; a first light-scattering layer contacting side surfaces of the LED dies, and a bottom wall and a sidewall of the reflector cup, the first light-scattering layer comprising light-scattering particles and a first binder material; and a second light-scattering layer contacting at least a top surface of the LED dies, and the first light-scattering layer at an interface, the second light-scattering layer comprising phosphor particles and a second binder material.

Abstract: Micro-light emitting diode (uLED) devices comprise: a source wafer comprising a uLED die bonded to a target wafer. Wafer n-contacts are directly bonded to a plurality of die n-contacts; wafer p-contacts are directly bonded to die p-contacts; and wafer dielectric material is directly bonded to die dielectric material; the wafer dielectric material isolates the wafer n-contacts and the wafer p-contacts.

Abstract: Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.

Abstract: Micro-light emitting diode (uLED) devices comprise: a plurality of micro-light emitting diodes (uLEDs), each of the uLEDs comprising: a pixel; an N-contact in contact with the pixel and having an N-contact top surface; a P-contact in contact with the pixel and having a P-contact top surface; an N-contact test pad on the N-contact top surface and having an N-contact test pad surface; and a P-contact test pad on the P-contact top surface and having a P-contact test pad surface; and a primary release layer positioned between all of the N-contacts and P-contacts of the uLEDs. Test apparatus and methods of making and testing the same are also provided.

Abstract: Provided are optical transformer devices having a high power efficiency. The device architecture provides uniform current spreading to minimize efficiency droop. The quantum well designs are optimized for both light-emitting diode (LED) and photo diode (PD) operation. A low-loss optical cavity allows efficient transfer of light from the LED junction to the PD junction. The architecture provides a low-loss voltage up- and down-conversion and provides compatibility with production-grade epitaxial growth and wafer fabrication processes.

Abstract: A gas sensing system measures a concentration of first and second gasses in a gas sample disposed in a cavity containing a porous scattering material. The first and second gas each have an absorption peak at a different wavelength. First and second emitters emit light having a spectrum that includes one of the different wavelengths. A single sensor, or multiple sensors, detect at least some of the light emitted by the first and second emitters. A processor determines concentration of the first and second gases from signals from the sensor that indicate intensities of the light from the first and second emitters. When a single sensor is used, the first and second emitters are driven, and the sensor signal detected, at different times. When multiple sensors are used, the sensors detect signals at one of the absorption peaks.

Abstract: A light-emitting diode (LED) array illuminates different objects in, for example, a commercial environment. A camera captures an image of each object under different lighting conditions. Feedback is used by processing circuitry for each image to determine the lighting parameters of the LED array to obtain optimum lighting conditions and the lighting parameters stored. When a new object is illuminated, the lighting parameters for the object are retrieved and used. The lighting parameters may change dependent on ambient conditions, including lighting and time of day.

Abstract: A semiconductor light-emitting device has an emitter matrix with an arrangement of emitter cells interspersed with non-emitter cells. The emitter cell has a semiconductor emitter, and a non-emitter cell does not have a semiconductor emitter. A number of bond pads for connection to a power supply and a plurality of wirebonds are present. Each wirebond extends from a bond pad to the semiconductor emitter of an emitter cell. An imaging arrangement includes a light source for illuminating a scene. The light source has a pair of such semiconductor light-emitting devices. A method of manufacturing such a semiconductor light-emitting device is also described.