Abstract: The present disclosure provides a multi-substrate handling system having an alignment apparatus capable of positioning each of a set of substrates in predetermined orientations for transfer. A buffer chamber is configured to receive and condition the set of substrates which are disposed on a substrate carrier. A first transfer assembly is configured to transfer the set of substrates to and from the buffer chamber and is capable of transferring each of the set of substrates from the alignment apparatus to the carrier in the buffer chamber. The carrier includes a plurality of modules capable of securing the set of substrates. The system includes a second transfer assembly having at least two robots configured to transfer the carrier of the set of substrates between the buffer chamber and a process chamber. The process chamber is capable of processing the set of substrates using different process parameters for each substrate.

Abstract: The present disclosure generally relates to photolithography systems, and methods for correcting positional errors in photolithography systems. When a photolithography system is first started, the system enters a stabilization period. During the stabilization period, positional readings and data, such as temperature, pressure, and humidity data, are collected as the system prints or exposes a substrate. A model is created based on the collected data and the positional readings. The model is then used to estimate errors in subsequent stabilization periods, and the estimated errors are dynamically corrected during the subsequent stabilization periods.

Abstract: Methods of treating a plasma showerhead comprise placing a showerhead comprising a faceplate and a plurality of gas openings PECVD substrate processing chamber having a process volume between the substrate support and the faceplate, and then exposing the showerhead to a silicon-containing precursor and a reactant gas so that the process volume and the gas openings are filled with the silicon-containing precursor and the reactant gas. The method includes introducing a first plasma in the PECVD substrate processing chamber to form a silicon oxide thin film or a silicon nitride thin film on the lower surface of the faceplate and lining the gas openings. A precursor-removing purge gas is flowed and a second plasma is struck to densify the thin film.

Abstract: Disclosed herein are systems and methods for high throughput angled ion processing. In one approach, a processing apparatus may include a chamber operable to contain a plasma, the chamber defined by a plurality of sidewalls, a first end wall, and a second end wall opposite the first end wall, an extraction assembly coupled to the second end wall, the extraction assembly comprising a plurality of apertures, wherein ions are extracted through the plurality of apertures are delivered to a substrate at a non-zero angle relative to a perpendicular extending from the substrate, and wherein the substrate is positioned external to the chamber. The processing apparatus may further include an actuator operable to shift the substrate relative to the moveable plates as the ions are extracted through the plurality of apertures.

Abstract: Exemplary semiconductor processing methods may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include a layer of a silicon-containing material. The silicon-containing material may be a silicon-and-carbon-containing material, a silicon-carbon-and-nitrogen-containing material, a silicon-and-nitrogen-containing material, a silicon-and-oxygen-containing material, or silicon material. The methods may include forming plasma effluents of the etchant precursor. The methods may include contacting the substrate with the plasma effluents of the etchant precursor. The contacting may etch a portion of the layer of the silicon-containing material. The processing region may be maintained at a cryogenic temperature while contacting the substrate with the plasma effluents of the etchant precursor.

Abstract: Solutions containing cyclodextrins for imparting odor control to materials used in absorbent products and associated products and methods. The solutions containing cyclodextrins for imparting odor control to materials used in absorbent products contain an optional polar organic solvent, water, cyclodextrin, and one or more odor-controlling compounds. The solutions can be used to uniformly apply a homogeneous solution of a cyclodextrin complex onto a solid surface whereby the cyclodextrin complex precipitates in situ on the solid surface. The cyclodextrin complex precipitates deposited from these solutions rapidly release odor-masking scents when hydrated with urine and can be deposited on substrates more effectively than cyclodextrin complexes in solid form.

Abstract: A pedestal may be configured to support a substrate during a semiconductor process. An electrostatic chuck (ESC) may include electrodes embedded in the pedestal that are configured to deliver a chucking volage to the pedestal during the semiconductor process. A power source coupled to an electrode may be configured to provide a signal having a frequency range to the electrode during the semiconductor process. A controller may be configured to receive a measurement of an impedance when the frequency range is applied to the electrode. The impedance measurements my then be used to determine a chucking state of the substrate, such as whether an airgap is present between the substrate and the pedestal during the semiconductor process.

Abstract: Choke plates and semiconductor manufacturing processing chamber incorporating the choke plates are described. The choke plates include an opening extending through the body with a plurality of angled apertures extending from a gas plenum within the body to the inner face of the opening. The plurality of angled apertures are angled from the gas plenum toward the top surface of the body.

Abstract: Wafers that begin as flat surfaces during a semiconductor manufacturing process may become warped or bowed as layers and features are added to an underlying substrate. This warpage may be detected between manufacturing processes by rotating the wafer adjacent to a displacement sensor. The displacement sensor may generate displacement data relative to a baseline measurement to identify areas of the wafer that bow up or down. The displacement data may then be mapped to locations on the wafer relative to an alignment feature. This mapping may then be used to adjust parameters in subsequent semiconductor processes, including adjusting how a carrier head on a polishing process holds or applies pressure to the wafer as it is polished. A model may be trained to provide control signals for a polishing/cleaning process, or to generate metrology data.

Abstract: An equipment front end module (EFEM) having walls, a first wall including one or more load ports and an EFEM chamber formed between the walls. The EFEM further includes an upper plenum at a top of the EFEM and including an opening into the EFEM chamber. Ducts provide a return gas flow path enabling recirculation of gas from the EFEM chamber to the upper plenum, the ducts proximate the one or more load ports. The one or more ducts includes flow elements configured to cause a low pressure condition at a location of the one or more load ports.

Abstract: A method of operating a set of dispatchers for a manufacturing facility, wherein each dispatcher of the set of dispatchers is a software application that makes dispatch decisions for the manufacturing facility based on facility data related to the manufacturing facility, includes identifying a first dispatcher of the set of dispatchers, wherein the first dispatcher is a non-initialized dispatcher, selecting, as an initialization partner, a second dispatcher of the set of dispatchers, and causing the first dispatcher to initiate a data retrieval process with the second dispatcher to retrieve, from the second dispatcher, an initial set of facility data related to the manufacturing facility.

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

Abstract: Disclosed herein are multi-turn drive assemblies, systems and methods of use thereof. The multi-turn drive assemblies enable a robot link member to have a maximum rotation of at least 360 degrees about an axis. The multi-turn drive assemblies can be incorporated into a robot arm for enabling 360 degrees rotation of one or more link members about an axis. The robot arm may be located in a transfer chamber of an electronic device processing system. Also disclosed are methods of controlling the multi-turn drive assemblies and related robots.

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Abstract: An ion implantation system including an ion source for generating an ion beam, an end station containing a platen for supporting a substrate to be implanted by the ion beam, and a load lock disposed adjacent the end station and adapted to transfer substrates between an external environment and the end station. The load lock may include a transfer chamber having a hollow interior, a first isolation door affixed to a first side of the transfer chamber and openable to the external environment, a second isolation door affixed to a second side of the transfer chamber and openable to an interior of the end station, and a volume filling cassette disposed within the hollow interior of the transfer chamber and adapted to hold at least one substrate.

Abstract: A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.

Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

Abstract: A method includes identifying trace data including a plurality of data points, the trace data being associated with production, via a substrate processing system, of substrates that have property values that meet threshold values. The method further includes determining, based on the trace data, a dynamic acceptable area outside of guardband limits. The method further includes causing, based on the dynamic acceptable area outside of the guardband limits, performance of a corrective action associated with the substrate processing system.