Abstract: High temperature treatment of graphite nanofibers to increase their catalytic activity. The heat treated graphite nanofiber catalysts are suitable for catalyzing chemical reactions such as oxidation, hydrogenation, oxidative-dehydrogenation, and dehydrogenation.
Abstract: Hot melt compositions include acid waxes and acrylate functional monomers free of acid groups. Upon application of actinic radiation, the hot melt compositions cure to form and etch resist. The hot melt compositions may be used in the manufacture of printed circuit boards, optoelectronic and photovoltaic devices.
Abstract: Compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices are provided. These compositions and methods are particularly suitable for removing polymer residues from electronic devices following plasma etch processes.
Type:
Grant
Filed:
July 28, 2006
Date of Patent:
May 25, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
Robert L. Brainard, Robert L. Auger, Joseph F. Lachowski
Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
Type:
Grant
Filed:
December 6, 2005
Date of Patent:
May 25, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
Deodatta Vinayak Shenai-Khatkhate, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, Jr.
Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.
Type:
Grant
Filed:
October 6, 2006
Date of Patent:
May 25, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
Jitendra S. Goela, Michael A. Pickering, James T. Fahey, Melinda S. Strickland
Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.
Type:
Grant
Filed:
August 13, 2007
Date of Patent:
May 25, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
Michael K. Gallagher, Dana A. Gronbeck, Timothy G. Adams, Jeffrey M. Calvert
Abstract: A tin or tin alloy plating film surface treatment aqueous solution that can reduce whiskers on the surface of a tin or tin alloy plating film, and can provide a favorable tin or tin alloy plating film using a simple method for tin or tin alloy plating films that are used on electronic components.
Abstract: A conditioner, surface treatment method, and metal plating film forming method for a moist method of providing a plating film with strong adhesion towards a surface with low roughness without forming a metal film or performing an adhesion promoter pretreatment using a wet method, when plating a resin substrate containing a blend of resin material and glass material, and the like.
Abstract: Methods are disclosed for replenishing tin and its alloying metals in an aqueous electrolytic plating bath using an acidic solution containing stannous oxide. During electroplating of tin or tin alloys the stannous ions and alloying metal ions are depleted. To maintain continuous and efficient electroplating processes predetermined amounts of the plating bath containing tin and its alloying metals are bailed out. The bail out is then mixed with a predetermined amount of acidic solution containing stannous oxide and any alloying metals. The mixture is then retuned to the plating bath to return the stannous ions and alloying metal ions to their steady state concentrations.
Type:
Application
Filed:
October 21, 2009
Publication date:
May 13, 2010
Applicant:
Rohm and Haas Electronic Materials LLC
Inventors:
Yu Luo, Neil D. Brown, Michael P. Toben
Abstract: The invention provides positive-acting chemically-amplified photoresist compositions that can provide excellent lithographic performance as well as significantly enhanced storage stability. In one aspect, photoresist compositions are provided that comprise a solvent that is free of hydroxy groups (i.e. non-hydroxylic solvent), a resin binder and a photoactive compound that exhibits enhanced and long-term solubility in the solvent. In a further aspect, resists are provided that are formulated in a hydroxyl-containing solvent such as ethyl lactate and that contains a sulfonium salt photoactive compound that includes a sulfonate counter anion that can provide enhanced storage stability for the resist.
Type:
Grant
Filed:
August 4, 1998
Date of Patent:
April 27, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
James F. Cameron, James Michael Mori, George W. Orsula, Guangyu Xu, Yoshihiro Yamamoto
Abstract: The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.
Type:
Grant
Filed:
December 6, 2002
Date of Patent:
April 20, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
George G. Barclay, Ashish Pandya, Wang Yueh, Anthony Zampini, Gary Ganghui Teng, Zhibiao Mao
Abstract: A method for plating tin or a tin alloy on a substrate such that whiskers are prevented form forming or the number of whickers is reduced in number as well as size.
Abstract: A process to deposit an Alpha Alumina (?-Al2O3) crystalline coating on a substrate surface, wherein the process includes hydrothermal synthesis of the ?-Al2O3 crystalline coating.
Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.
Type:
Application
Filed:
September 15, 2009
Publication date:
March 18, 2010
Applicants:
National University Corporation Tohoku University, Advanced Interconnect Materials, LLC
Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
Abstract: To provide a tin electroplating solution devoid of harmful lead and having excellent solder wettability, and a method for depositing a tin film on electronic parts using such a tin electroplating solution. The tin electroplating solution includes organic acids, a naphtholsulfonic acid and, as needed, an antioxidant and a surfactant is disclosed.
Abstract: Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device.
Type:
Grant
Filed:
January 29, 2009
Date of Patent:
February 16, 2010
Assignee:
Rohm and Haas Electronic Materials LLC
Inventors:
Deyan Wang, Robert D. Mikkola, Chunyi Wu, George G. Barclay
Abstract: Methods of replenishing indium ions in indium electroplating compositions are disclosed. Indium ions are replenished during electroplating using indium salts of certain weak acids. The method may be used with soluble and insoluble anodes.
Type:
Application
Filed:
April 22, 2009
Publication date:
February 11, 2010
Applicant:
Rohm and Haas Electronic Materials LLC
Inventors:
Edit Szocs, Felix J. Schwager, Thomas Gaethke
Abstract: A method for making high temperature filter media includes the steps of melt-spinning a plurality of fibers of pre-ceramic thermoplastic polymer to form a non-woven textile web of the fibers, curing and cross-linking the thermoplastic polymer to a thermo-set polymer and thermally decomposing the thermo-set polymer to ceramic.
Type:
Grant
Filed:
December 16, 2003
Date of Patent:
February 9, 2010
Assignee:
Global Strategic Materials, LLC
Inventors:
Edward J. A. Pope, Jozsef Hepp, Kenneth M. Kratsch
Abstract: Methods include selectively depositing a phase change resist having high light transmittance onto a dielectric to form a pattern, etching away portions of the dielectric not covered by the resist and depositing a metal seed layer on the etched portions of the dielectric. A metal layer is then deposited on the metal seed layer by light induced plating.
Type:
Application
Filed:
July 31, 2009
Publication date:
February 4, 2010
Applicant:
Rohm and Haas Electronic Materials LLC
Inventors:
Robert K. Barr, Hua Dong, Thomas C. Sutter