Abstract: Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. The millisecond anneal system includes a processing chamber for thermally treating a substrate using a millisecond anneal process. The system further includes one or more arc lamps. Each of the one or more arc lamps is coupled to a water loop for circulating water through the arc lamp during operation of the arc lamp. The system includes a reagent injection source configured to introduce a reagent, such as nitrogen gas, into water circulating through the arc lamp during operation of the arc lamp.

Abstract: Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.

Abstract: Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.

Abstract: Defluorination processes for removing fluorine residuals from a workpiece such as a semiconductor wafer are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer. The workpiece can have one or more fluorine residuals on a surface of the workpiece. The method can include performing a defluorination process on the workpiece at least in part using a plasma generated from a first process gas. The first process gas can include a hydrogen gas. Subsequent to performing the defluorination process, the method can include performing a plasma strip process on the workpiece to at least partially remove a photoresist layer from the workpiece.

Abstract: Systems and methods for substrate support in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system includes a processing chamber having a wafer support plate. A plurality of support pins can extend from the wafer support plate. The support pins can be configured to support a substrate. At least one of the support pins can have a spherical surface profile to accommodate a varying angle of a substrate surface normal at the point of contact with the substrate. Other example aspects of the present disclosure are directed to methods for estimating, for instance, local contact stress at the point of contact with the support pin.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

Abstract: A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

Abstract: Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. The breakage detection signal is indicative of whether the substrate has broken during thermal processing.

Abstract: Systems and methods for detecting a fluid leak associated with fluid cooled components in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system can include a processing chamber having one or more fluid cooled components. The system can include a gas flow system configured to provide for the flow of process gas in the processing chamber. The system can include a vapor sensor configured to measure vapor in process gas flowing through the gas flow system for detecting a fluid leak associated with the one or more fluid cooled components.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

Abstract: Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

Abstract: Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. The breakage detection signal is indicative of whether the substrate has broken during thermal processing.

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.

Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

Abstract: The plasma reactor of the invention is intended for treating the surfaces of objects such as semiconductor wafers and large display panels, or the like, with plasma. The main part of the plasma reactor is an array of RF antenna cells, which are deeply immersed into the interior of the working chamber. Each antenna cell has a ferromagnetic core with a heat conductor and a coil wound onto the core. The core and coil are sealed in the protective cap. Deep immersion of the antenna cells having the structure of the invention provides high efficiency of plasma excitation, while the arrangement of the plasma cells and possibility of their individual adjustment provide high uniformity of plasma distribution and possibility of adjusting plasma parameters, such as plasma density, in a wide range.