Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.

Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.

Abstract: A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.

Abstract: As part of a system for processing workpieces, a workpiece support arrangement, separate from a process chamber arrangement supports at least two workpieces at least generally in a stacked relationship to form a workpiece column. A transfer arrangement transports at least two of the workpieces between the workpiece column and the process chamber arrangement by simultaneously moving the two workpieces at least generally along first and second transfer paths, respectively, that are defined between the workpiece column and the first and second process stations. The transfer arrangement can simultaneously move untreated and treated workpieces. Vertical motion swing arms and coaxial swing arms are described. A pair of spaced apart swing arms, the workpiece column and the processing stations can cooperatively define a pentagonal shape. Timing belt backlash elimination, a dual degree of freedom slot valve and low point chamber pumping, for removing chamber contaminants, are also described.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

Abstract: An endeffector for handling wafers at a relatively low temperature is disclosed along with an endeffector for handling wafers at a relatively high temperature. Both endeffectors include a base member and uniquely designed support members that are configured to only contact a wafer at the wafer's edge. Further, the support members have an arcuate shape that generally matches a radius of a semiconductor wafer. More specifically, each support member has a curved wafer contact surface that tapers from a maximum radius at a top surface to a minimum radius at a bottom surface. The endeffectors may also include a wafer detection system. The endeffector for handling wafers at relatively low temperatures may also include a pushing device that is used not only to position a wafer but to hold a wafer on the endeffector during acceleration or deceleration of the endeffector caused by a robot arm attached to the endeffector.

Abstract: A method and system for determining a shape of an irradiance pulse to which a semiconductor wafer is to be exposed during a thermal cycle are disclosed. The method includes receiving, with a processor circuit, thermal cycle parameters specifying requirements of the thermal cycle, and determining, with the processor circuit, a shape of a heating portion of the irradiance pulse. Determining includes optimizing at least one parameter of a flux profile model of the heating portion of the irradiance pulse to satisfy the requirements while minimizing frequency-domain energy spectral densities of the flux profile model at resonant frequencies of the wafer, to minimize vibration of the wafer at the resonant frequencies when the wafer is exposed to the irradiance pulse.

Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.

Abstract: A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: An apparatus for supporting a workpiece during heat-treating includes a support plate having a non-planar upper surface, and a support system. The support system is configured to support the workpiece above the support plate during heat-treating of the workpiece, such that a lower surface of an initial shape of the workpiece is supported at a non-uniform spacing above the non-planar upper surface of the support plate, said non-uniform spacing including an edge gap beneath an outer perimeter of the workpiece, and a central gap at a central axis of the workpiece.

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract: An apparatus for supporting a semiconductor workpiece includes a heating system configured to cause thermally-induced motion of the semiconductor workpiece by heating a surface of the workpiece relative to a bulk of the workpiece. The thermally-induced motion includes vertical motion of an outer edge region of the workpiece and a center of the workpiece relative to each other. The apparatus further includes a support system configured to allow the thermally-induced motion including the vertical motion of the outer edge region of the workpiece and the center of the workpiece relative to each other while supporting the workpiece.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating electrodes include an inner heating electrode defining an inner heating zone and a peripheral heating electrode defining a peripheral heating zone separated by a gap distance. The temperature profile across the surface of the substrate can be tuned by varying thermal characteristics of the pedestal thermal zone, the inner heating zone, the peripheral heating zone, or by varying the size of the gap distance between the inner heating electrode and the peripheral heating electrode.

Abstract: An apparatus for producing electromagnetic radiation includes a flow generator configured to generate a flow of liquid along an inside surface of an envelope, first and second electrodes configured to generate an electrical arc within the envelope to produce the electromagnetic radiation, and an exhaust chamber extending outwardly beyond one of the electrodes, configured to accommodate a portion of the flow of liquid. In another aspect, the flow generator is electrically insulated. In another aspect, the electrodes are configured to generate an electrical discharge pulse to produce an irradiance flash, and the apparatus includes a removal device configured to remove particulate contamination from the liquid, the particulate contamination being released during the flash and being different than that released by the electrodes during continuous operation.

Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

Abstract: The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.

Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.