Patents Assigned to Meijo University
  • Publication number: 20210111538
    Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
    Type: Application
    Filed: March 13, 2018
    Publication date: April 15, 2021
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Kazuki KIYOHARA, Masaru TAKIZAWA, Ji-Hao LIANG
  • Publication number: 20210074877
    Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.
    Type: Application
    Filed: September 9, 2020
    Publication date: March 11, 2021
    Applicants: KOITO MANUFACTURING CO., LTD., MEIJO UNIVERSITY, TOYODA GOSEI CO., LTD.
    Inventors: Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Lu Weifang, Naoki Sone, Kazuyoshi Iida, Ryo Nakamura, Masaki Oya
  • Patent number: 10892601
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 12, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru Kuramoto, Seiichiro Kobayashi, Tetsuya Takeuchi
  • Patent number: 10833223
    Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: November 10, 2020
    Assignees: TOYODA GOSEI CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hisanori Kojima, Toshiki Yasuda, Kazuyoshi Iida
  • Publication number: 20200300862
    Abstract: A microorganism identification method according to the present invention includes a step of subjecting a sample containing microorganisms to mass spectrometry to obtain a mass spectrum, a step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum, and an identification step of identifying which bacteria of serovar of Salmonella genus bacteria the microorganisms contained in the sample contain, based on the mass-to-charge ratio m/z, in which at least one of two types of ribosomal proteins S8 and Peptidylpropyl isomerase is used as the marker protein.
    Type: Application
    Filed: March 31, 2016
    Publication date: September 24, 2020
    Applicants: SHIMADZU CORPORATION, MEIJO UNIVERSITY
    Inventors: Hiroto TAMURA, Naomi YAMAMOTO, Teruyo KATO, Keisuke SHIMA, Shinji FUNATSU
  • Publication number: 20200176633
    Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.
    Type: Application
    Filed: February 5, 2020
    Publication date: June 4, 2020
    Applicants: TOSHIBA MATERIALS CO., LTD., Meijo University
    Inventors: Ryosuke HIRAMATSU, Atsuya SASAKI, Hideaki HIRABAYASHI, Satoshi KAMIYAMA
  • Patent number: 10647973
    Abstract: A novel mannanase. A polypeptide having a specific amino acid sequence such as the amino acid represented by SEQ ID NO:2 exhibits a mannanase activity. Although this mannanase does not have homology with known mannanase at the amino acid level, the polypeptide has a mannanase activity as well as heat resistance.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: May 12, 2020
    Assignee: MEIJO UNIVERSITY EDUCATIONAL FOUNDATION
    Inventors: Motoyuki Shimizu, Masashi Kato
  • Publication number: 20200144451
    Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
    Type: Application
    Filed: January 9, 2020
    Publication date: May 7, 2020
    Applicant: MEIJO UNIVERSITY
    Inventors: Tetsuya TAKEUCHI, Tomoyuki SUZUKI, Hiroki SASAJIMA, Motoaki IWAYA, Isamu AKASAKI
  • Patent number: 10593831
    Abstract: Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: March 17, 2020
    Assignee: MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
  • Publication number: 20200013924
    Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Applicants: TOSHIBA MATERIALS CO., LTD., Meijo University
    Inventors: Satoshi KAMIYAMA, Atsuya SASAKI, Ryosuke HIRAMATSU, Hideaki HIRABAYASHI
  • Publication number: 20190363515
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 28, 2019
    Applicants: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI, Tetsuya TAKEUCHI
  • Publication number: 20190355571
    Abstract: A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1×109 pieces to 1×1011 pieces per cm2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference ?H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.
    Type: Application
    Filed: November 8, 2017
    Publication date: November 21, 2019
    Applicants: ASAHI KASEI KABUSHIKI KAISHA, MEIJO UNIVERSITY
    Inventors: Akira Yoshikawa, Tomohiro Morishita, Motoaki Iwaya
  • Patent number: 10411438
    Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: September 10, 2019
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Isamu Akasaki, Takanobu Akagi
  • Patent number: 10398442
    Abstract: Providing a stent which can easily be indwelled in a blood vessel in a state such that a catheter can be projected toward an inside of aneurysm. The stent is a stent for use in medical treatment of an aneurysm (1) and includes a cylindrical stent body (10) provided on a peripheral wall and having a plurality of insertion portions (11) through each of which a catheter (7) is insertable and a plurality of valving elements (20) provided in the insertion portions (11) respectively. Each valving element (20) is opened when the catheter (7) is inserted through one of the insertion portions (11). Each valving element (20) is closed when the catheter (7) is pulled out of the insertion portion (11). This suppresses an outflow into a blood vessel of a coil (9) placed in the aneurysm (1).
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: September 3, 2019
    Assignee: MEIJO UNIVERSITY
    Inventors: Toshio Fukuda, Akihiko Ichikawa, Takahiro Ito
  • Publication number: 20190242903
    Abstract: To provide a method for discriminating a microorganism including: a step of subjecting a sample containing a microorganism to mass spectrometry to obtain a mass spectrum; a reading step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum; and a discrimination step of discriminating which bacterial species of Escherichia coli, Shigella bacteria, and Escherichia albertii the microorganism contained in the sample contains based on the mass-to-charge ratio m/z, in which at least one of 13 ribosomal proteins S5, L15, S13, L31, L22, L19, L20, L13, S15, L25, HNS, HdeB, and L29 is used as the marker protein.
    Type: Application
    Filed: March 31, 2016
    Publication date: August 8, 2019
    Applicants: SHIMADZU CORPORATION, MEIJO UNIVERSITY
    Inventors: Hiroto TAMURA, Naomi YAMAMOTO, Teruyo KATO, Keisuke SHIMA, Shinji FUNATSU
  • Publication number: 20190120851
    Abstract: A microorganism identification method includes steps of: obtaining a mass spectrum through mass spectrometry of a sample including microorganisms; reading, from the mass spectrum, a mass-to-charge ratio m/z of a peak associated with a marker protein; and identifying which bacterial species of the genus Campylobacter are included in the microorganisms in the sample based on the mass-to-charge ratio m/z. The microorganism identification method is further characterized in that at least one of the following 18 marker proteins is used as the marker protein, S10, L23, S19, L22, L16, L29, S17, L14, L24, S14, L18, L15, L36, S13, S11 (Me), L32, and L7/L12.
    Type: Application
    Filed: March 31, 2016
    Publication date: April 25, 2019
    Applicants: SHIMADZU CORPORATION, MEIJO UNIVERSITY
    Inventors: Hiroto TAMURA, Naomi YAMAMOTO, Teruyo KATO, Keisuke SHIMA, Shinji FUNATSU
  • Publication number: 20190056407
    Abstract: To provide a method for discriminating a microorganism by selecting and using a marker protein capable of reproducibly and quickly discriminating a bacterial species of the genus Listeria. The method for discriminating a microorganism according to the present invention includes: a step of subjecting a sample containing a microorganism to mass spectrometry to obtain a mass spectrum; a reading step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum; and a discrimination step of discriminating which bacterial species of Listeria bacteria the microorganism contained in the sample contains based on the mass-to-charge ratio m/z, in which at least one of 17 ribosomal proteins L3, L4, L23, L2, L24, L6, L18, S5, L15, S13, S11, L10, L21, L13, S9, L31, S16 is used as the marker protein and particularly at least one of 8 ribosomal proteins L24, L6, L18, L15, S9, L31, S16 among the 17 ribosomal proteins is used.
    Type: Application
    Filed: March 31, 2016
    Publication date: February 21, 2019
    Applicants: SHIMADZU CORPORATION, MEIJO UNIVERSITY
    Inventors: Hiroto TAMURA, Naomi YAMAMOTO, Teruyo KATO, Keisuke SHIMA, Shinji FUNATSU
  • Patent number: 10116120
    Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: October 30, 2018
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Isamu Akasaki, Shinichi Tanaka, Kazufumi Tanaka
  • Publication number: 20180166856
    Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Shinichi TANAKA, Kazufumi TANAKA
  • Publication number: 20180166855
    Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Takanobu AKAGI