Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: A microorganism identification method according to the present invention includes a step of subjecting a sample containing microorganisms to mass spectrometry to obtain a mass spectrum, a step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum, and an identification step of identifying which bacteria of serovar of Salmonella genus bacteria the microorganisms contained in the sample contain, based on the mass-to-charge ratio m/z, in which at least one of two types of ribosomal proteins S8 and Peptidylpropyl isomerase is used as the marker protein.

Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.

Abstract: A novel mannanase. A polypeptide having a specific amino acid sequence such as the amino acid represented by SEQ ID NO:2 exhibits a mannanase activity. Although this mannanase does not have homology with known mannanase at the amino acid level, the polypeptide has a mannanase activity as well as heat resistance.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

Abstract: Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.

Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Abstract: A nitride semiconductor substrate includes a sapphire substrate and a nitride semiconductor layer formed thereon and containing a group III element including Al and nitrogen as a main component. A surface of the sapphire substrate where the nitride semiconductor layer is formed includes recesses having a maximum opening size of from 2 nm to 60 nm in an amount of from 1×109 pieces to 1×1011 pieces per cm2. The recesses and surfaces immediately above the recesses form spaces. Of a surface of the nitride semiconductor layer on the sapphire substrate side, a height difference ?H between a surface immediately above of each recess and a surface in contact with a flat surface is 10 nm or less. A portion of the nitride semiconductor layer above each recess has a crystalline structure produced by growth along a polar plane of the group III element.

Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.

Abstract: Providing a stent which can easily be indwelled in a blood vessel in a state such that a catheter can be projected toward an inside of aneurysm. The stent is a stent for use in medical treatment of an aneurysm (1) and includes a cylindrical stent body (10) provided on a peripheral wall and having a plurality of insertion portions (11) through each of which a catheter (7) is insertable and a plurality of valving elements (20) provided in the insertion portions (11) respectively. Each valving element (20) is opened when the catheter (7) is inserted through one of the insertion portions (11). Each valving element (20) is closed when the catheter (7) is pulled out of the insertion portion (11). This suppresses an outflow into a blood vessel of a coil (9) placed in the aneurysm (1).

Abstract: To provide a method for discriminating a microorganism including: a step of subjecting a sample containing a microorganism to mass spectrometry to obtain a mass spectrum; a reading step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum; and a discrimination step of discriminating which bacterial species of Escherichia coli, Shigella bacteria, and Escherichia albertii the microorganism contained in the sample contains based on the mass-to-charge ratio m/z, in which at least one of 13 ribosomal proteins S5, L15, S13, L31, L22, L19, L20, L13, S15, L25, HNS, HdeB, and L29 is used as the marker protein.

Abstract: A microorganism identification method includes steps of: obtaining a mass spectrum through mass spectrometry of a sample including microorganisms; reading, from the mass spectrum, a mass-to-charge ratio m/z of a peak associated with a marker protein; and identifying which bacterial species of the genus Campylobacter are included in the microorganisms in the sample based on the mass-to-charge ratio m/z. The microorganism identification method is further characterized in that at least one of the following 18 marker proteins is used as the marker protein, S10, L23, S19, L22, L16, L29, S17, L14, L24, S14, L18, L15, L36, S13, S11 (Me), L32, and L7/L12.

Abstract: To provide a method for discriminating a microorganism by selecting and using a marker protein capable of reproducibly and quickly discriminating a bacterial species of the genus Listeria. The method for discriminating a microorganism according to the present invention includes: a step of subjecting a sample containing a microorganism to mass spectrometry to obtain a mass spectrum; a reading step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum; and a discrimination step of discriminating which bacterial species of Listeria bacteria the microorganism contained in the sample contains based on the mass-to-charge ratio m/z, in which at least one of 17 ribosomal proteins L3, L4, L23, L2, L24, L6, L18, S5, L15, S13, S11, L10, L21, L13, S9, L31, S16 is used as the marker protein and particularly at least one of 8 ribosomal proteins L24, L6, L18, L15, S9, L31, S16 among the 17 ribosomal proteins is used.

Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.

Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.

Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.