Abstract: Provided is a non-transitory computer-readable medium storing a program for causing a computer to execute the steps including a step of subjecting a sample containing microorganisms to mass spectrometry to obtain a mass spectrum, a step of reading a mass-to-charge ratio m/z of a peak derived from a marker protein from the mass spectrum, and an identification step of identifying which bacteria of serovar of Salmonella genus bacteria the microorganisms contained in the sample contain, based on the mass-to-charge ratio m/z, wherein at least one of two types of ribosomal proteins S8 and Peptidylpropyl isomerase is used as the marker protein.

Abstract: An LED array includes: a substrate having a depressing-projecting structure formed on a surface of the substrate; a planarization layer formed on the depressing-projecting structure; a plurality of micro LED elements each of which is formed on the planarization layer; and a stray light attenuating groove formed between a pair of adjacent micro LED elements among the plurality of micro LED elements, and extending from toward the pair of micro LED elements to toward the depressing-projecting structure at least part way of the planarization layer.

Abstract: One aspect of the present disclosure is a medical treatment tool including a first arm having a first end and a second end and a second arm having a first end and a second end, wherein the first end of the first arm and the first end of the second arm are coupled such that a distance between the second end of the first arm and the second end of the second arm is adjustable. Each of the first arm and the second arm comprises: a conductor extending from the first end to the second end and exposed at the second end; a support containing a composite material made of a resin and a reinforcing material as a main component and extending along the conductor; and a cover covering the conductor and the support.

Abstract: The object of the present invention is to provide a separation method and a separation apparatus for carbon nanotubes capable of separating a mixture of carbon nanotubes in a highly efficient, inexpensive and simple manner.

Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.

Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.

Abstract: A rectangular substrate 12 composed of c-plane sapphire is prepared. Nickel serving as a catalytic metal is deposited on the entirety of an upper surface of the substrate 12 to form a catalytic metal film 14 (see (a)). The catalytic metal film 14 is patterned by a lithography method into a catalytic metal film 16 having a predetermined shape (see (b)). The temperature of the catalytic metal film 16 is raised to 1000° C. and maintained at 1000° C. for 20 minutes. The temperature of the catalytic metal film 16 is lowered from 1000° C. to 800° C. at a rate of 5° C./min. The temperature of the catalytic metal film 16 is maintained at 800° C. for 15 hours. Thereby, a catalytic metal layer 17 having large grains is provided (see (c)).

Abstract: The present invention provides a method for producing a carbon nanotube having a high purity and a method for purifying an unpurified carbon nanotube or a carbon nanotube having a low purity. The method for producing a carbon nanotube comprises a step of providing a carbonaceous material containing a carbon nanotube and a step of adding an iron material and hydrogen peroxide to the carbonaceous material to thereby purity a carbon nanotube. It is preferred that an iron powder is used as the iron material. The iron powder is preferably used in a proportion of 0.5 to 20 parts by mass relative to 100 parts by mass of the whole carbonaceous material.

Abstract: A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.

Abstract: An aluminum nitride single crystal in the form of polygonal columns, the polygonal columns having the following properties [a] to [c]: [a] the content of a metal impurity is below a detection limit, [b] the average bottom area is from 5×103 to 2×105 ?m2, and [c] the average height is 50 ?m to 5 mm. The above aluminum nitride single crystal is preferably obtainable in a method including the steps of sublimating an aluminum nitride starting material (A) containing 0.1 to 30% by mass of a rare earth oxide by heating the starting material at a temperature of not lower than 2000° C., depositing aluminum nitride on a hexagonal single crystal substrate and thereby growing aluminum nitride single crystal in the shape of polygonal columns.

Abstract: A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.

Abstract: A process and an apparatus for producing a composite material utilize a rotatable hollow body that is inclined with an upstream side being higher than a downstream side. A reaction zone is defined within an elongated chamber in the hollow body. Protrusions inwardly extend from an inner peripheral wall of the hollow body adjacent to the reaction zone. Base material is input into the chamber via a base material introduction port and a carbon source vapor is input into the chamber via a carbon source supply port. A heater heats the reaction zone to a temperature at which carbon nanotubes form on the base material from the carbon source vapor. The protrusions catch base material disposed on the inner peripheral wall of the hollow body when the hollow body rotates and then drop the base material through the reaction zone so that the base material contacts the carbon source vapor.

Abstract: The multi-micro hollow cathode light source has a cathode plate, an insulation plate, an anode plate, and metal pieces. The insulation plate is sandwiched by the cathode plate and the anode plate. The cathode plate is made of copper. The centers of the cathode plate, insulation plate, and anode plate, are provided with holes, respectively. The holes form a penetrating though-hole. Linear slots are disposed in the cathode plate continuously extending from the hole in a cross shape. Each slot penetrates the cathode plate. Four metal pieces made of materials different from one another are inserted and buried in the four slots.

Abstract: Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

Abstract: An information processing apparatus 10 includes an input device 20, a computer 30, and a display 40. The input device 20 is provided so that a dome-shaped operation cover 25 covers an image capturing device included in the input device 20. The computer 30 recognizes a pressing digit that has pressed the operation cover 25 based on a color image of an entire hand which has been captured by the image capturing device, and generates a set command based on the pressing digit. The computer 30 also recognizes an approaching digit that is approaching the operation cover 25 based on the color image, and generates a pre-announcement command based on the digit. The computer 30 executes a process corresponding to each of the commands.

Abstract: The present invention provides a method for producing a carbon nanotube having a high purity and a method for purifying an unpurified carbon nanotube or a carbon nanotube having a low purity. The method for producing a carbon nanotube comprises a step of providing a carbonaceous material containing a carbon nanotube and a step of adding an iron material and hydrogen peroxide to the carbonaceous material to thereby purity a carbon nanotube. It is preferred that an iron powder is used as the iron material. The iron powder is preferably used in a proportion of 0.5 to 20 parts by mass relative to 100 parts by mass of the whole carbonaceous material.

Abstract: The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

Abstract: The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm?3; donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm?3 and donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

Abstract: The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

Abstract: The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.