Patents Assigned to Meijo University
  • Publication number: 20090065763
    Abstract: The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
    Type: Application
    Filed: November 17, 2008
    Publication date: March 12, 2009
    Applicant: Meijo University
    Inventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya
  • Publication number: 20080277670
    Abstract: The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm?3; donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm?3 and donor impurities that are in a concentration less than 1×1019 cm?3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 13, 2008
    Applicants: Meijo University, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya, Masahiro Yoshimoto, Hiroyuki Kinoshita
  • Publication number: 20080123713
    Abstract: The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.
    Type: Application
    Filed: August 31, 2007
    Publication date: May 29, 2008
    Applicant: Meijo University
    Inventors: Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki
  • Publication number: 20070145557
    Abstract: The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
    Type: Application
    Filed: February 26, 2007
    Publication date: June 28, 2007
    Applicant: Meijo University
    Inventors: Satoshi Kamiyama, Hiroshi Amano, Motoaki Iwaya, Isamu Akasaki, Hideki Kasugai
  • Publication number: 20070114560
    Abstract: The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
    Type: Application
    Filed: November 21, 2006
    Publication date: May 24, 2007
    Applicant: Meijo University
    Inventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya, Hiroyuki Kinoshita