Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; a pulling component configured to drive the pulling rod component to move up and down; and a rotating component configured to drive the pulling rod component to rotate.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a pulling component configured to drive the pulling rod component to move up and down. The pulling component may include a driving device, a pillar, a slide, and a screw rod. The driving device is mounted on a top of the pillar; the pillar includes slide rail; the screw rod is mounted in parallel with the slide rail and one end of the screw rod is connected to the driving device; the slide is nested on the screw rod, at least a part of the slide is located within the slide rail, and a rotation of the screw rod drives the slide to move up and down.

Abstract: The present disclosure provides a method for growing a seed crystal, including: obtaining a plurality of orthohexagonal seed crystals in a hexagonal crystal system by performing a first cutting on a plurality of seed crystals in the hexagonal crystal system to be expanded, respectively; splicing the plurality of orthohexagonal seed crystals in the hexagonal crystal system; obtaining a seed crystal in the hexagonal crystal system to be grown by performing a second cutting on the plurality of spliced orthohexagonal seed crystals in the hexagonal crystal system; obtaining an intermediate seed crystal in the hexagonal crystal system by performing a gap growth on the seed crystal in the hexagonal crystal system to be grown under a first setting condition; and obtaining a target seed crystal in the hexagonal crystal system by performing an epitaxial growth on the intermediate seed crystal in the hexagonal crystal system under a second setting condition.

Abstract: The present disclosure provides a method for preparing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

Abstract: The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.

Abstract: The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.

Abstract: The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber, wherein a cover plate of the temperature field device includes a first through hole; and a pulling rod component that passes through the first through hole and extends into the temperature field device.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; a pulling component configured to drive the pulling rod component to move up and down; and a rotating component configured to drive the pulling rod component to rotate.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a weighting component configured to determine a weight of a crystal being grown on the pulling rod component.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a pulling component configured to drive the pulling rod component to move up and down. The pulling component may include a driving device, a pillar, a slide, and a screw rod. The driving device is mounted on a top of the pillar; the pillar includes slide rail; the screw rod is mounted in parallel with the slide rail and one end of the screw rod is connected to the driving device; the slide is nested on the screw rod, at least a part of the slide is located within the slide rail, and a rotation of the screw rod drives the slide to move up and down.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include preparing a doped YAG crystal rod; preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution; performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate; placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core.

Abstract: The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

Abstract: Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.