Abstract: The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

Abstract: The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

Abstract: The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include placing a doped YAG single crystal fiber core into a growth zone and placing a raw material into a dissolution zone; adding a mineralizer into the growth chamber to cause the mineralizer to immerse the raw material and the doped YAG single crystal fiber core; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core based on the doped YAG single crystal fiber core and the raw material under a preset pressure.

Abstract: The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

Abstract: The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1?x?z)X2O3+SiO2+2xCeO2+zZ2O3?X2(1?x?Z)Ce2xZ2zSiO5+z/2O2? or (1?x?y?z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3?X2(1?x?y?z)Y2yCe2xZ2zSiO5+x/202?; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)x2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-Z)Ce2xZ2zSiO5+x/2O2? or (1-x-y-z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-y-z)Y2yCe2xZ2zSiO5+x/2O2?; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)X2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-z)Ce2xZ2zSiO5+x/2O2? or (1-x-y-z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-y-z)Y2yCe2xZ2zSiO5+x/2O2?; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

Abstract: The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure discloses a method for growing a crystal without annealing. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: The present disclosure provides an open Czochralski furnace for single crystal growth. The crystal growth apparatus may include a furnace chamber which includes a furnace body and a furnace cover. The furnace cover may be mounted on a top of the furnace body. The furnace cover may include a first through hole. The first through hole may be configured to place a temperature field. The crystal growth apparatus in the present disclosure can solve a problem that a traditional vacuum furnace needs to firstly pump a high vacuum and secondly recharge a protecting gas, thereby improving the apparatus safety; simplify the structure of the furnace body such that components that need maintenance and repair can be disassembled quickly, thereby reducing manufacturing and maintenance costs; improve the operation accuracy and stability of the apparatus; and reduce the influence of heat convection on the stability of weighing signals in the open furnace.

Abstract: The present disclosure provides an open temperature field device, including a bottom plate, a drum, a filler, and a cover plate. The bottom plate may be mounted on a bottom of the temperature field device and cover an open end of the drum. The cover plate may be mounted on a top of the temperature field device and cover the other open end of the drum. The filler may be filled inside the drum. In the temperature field device, the filler filled inside the drum can form a new thermal insulation layer, which effectively prevents the problem of sudden temperature changes caused by the cracking of the drum and improves the stability performance and a count of reusable times of the temperature field device. Meanwhile, by adjusting the filling height and the tightness of the filler, the temperature gradient of the temperature field device can be adjusted.

Abstract: The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

Abstract: The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)X2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-z)Ce2xZ2zSiO5+x/2O2? or (1-x-y-z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3?X2(1-x-y-z)Y2yCe2xZ2zSiO5+x/2O2?; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.