Abstract: A method for manufacturing a system in a wafer for measuring an absolute and a relative pressure includes etching a shallow and a deep cavity in the wafer. A top wafer is applied and the top wafer is thinned for forming a first respectively second membrane over the shallow respectively deep cavity, and for forming in the top wafer first respectively second bondpads at the first respectively second membrane resulting in a first respectively second sensor. Back grinding the wafer results in an opened deep cavity and a still closed shallow cavity. The first bondpads of the first sensor measure an absolute pressure and the second bondpads of the second sensor measure a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.

Abstract: A multi-LED device comprises a transparent substrate, a plurality of light emitting diodes, LEDs, arranged for emitting light of a plurality of colors and disposed on the transparent substrate, an integrated control circuit in connection with the LEDs and comprising a plurality of photo sensors optically connected to the LEDs. Each photo sensor is provided with a color filter. The integrated circuit is arranged for receiving via the plurality of photo sensors information on a light intensity of the plurality of colors of the LEDs and for regulating the light intensity of the colors of the LEDs based on the information on the light intensity. The transparent substrate with the plurality of LEDs is flip-chip mounted on the integrated control circuit.

Abstract: A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

Abstract: A semiconductor device for measuring IR radiation is disclosed. It comprises a substrate and a cap enclosing a cavity, a sensor pixel in the cavity, comprising a first absorber for receiving said IR radiation, a first heater, first temperature measurement means for measuring a first temperature; a reference pixel in the same cavity, comprising a second absorber shielded from said IR radiation, a second heater, and second temperature measurement means for measuring a second temperature; a control circuit for applying a first/second power to the first/second heater such that the first temperature equals the second temperature; and an output circuit for generating an output signal indicative of the IR radiation based on a difference between the first and second power.

Abstract: An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.

Abstract: A single phase motor drive circuit for driving a single phase motor, comprising: a timer unit for receiving a sensor signal indicative of an angular position of a rotor, and for providing a timing signal in phase with the sensor signal; a waveform generator for generating a waveform for energizing the motor, the waveform generator being adapted for receiving the timing signal and a configurable setting, and for generating the waveform based thereon; a configuration unit for receiving an input signal indicative of a desired motor speed, the configuration unit being adapted for generating the configurable setting as a function of the input signal, and for providing the setting to the waveform generator to dynamically configure the waveform generator. A method, an assembly and a cooling system includes the single phase motor driver circuit.

Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (?T) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

Abstract: Method of starting a three-phase sinusoidal BLDC motor, comprising: a) determining an initial position of the rotor; b) applying a first set of sinusoidal energizing signals to the windings, corresponding to a set of sinusoidal waveforms shifted apart by 120° and 240° sampled at a first angle (?1); and maintaining the energizing signals for allowing the rotor to move to a first angular position; c) while maintaining the energizing signals, monitoring two of the phase currents, and determining whether a predefined condition is satisfied, comprising testing whether a ratio of two total current values is equal to a predefined value, and if true, to repeat steps b) and c), but with second and further sinusoidal energizing signals sampled at a second or further angular position, selected from a limited group of discrete angular positions.

Abstract: To provide a rotation detection device that has a miniaturized sensor IC in comparison with a prior art. A rotation detection device includes: a magnet that forms a magnetic field toward a tooth surface of a gear; and a sensor disposed between the magnet and the gear, the sensor including: at least a pair of magnetic detection elements x1 and x2 that outputs signals according to a magnetic flux density in a radial direction of the gear; and a magnetic concentrator that induces, in the radial direction of the gear, a component in a circumferential direction of the gear in the magnetic flux density on detection surfaces of the magnetic detection elements x1 and x2, the sensor detecting a variation in a magnetic flux density accompanying the rotation of the gear.

Abstract: A method determines isotropic stress by means of a Hall element which includes a plate-shaped area made of a doped semiconductor material and comprises four contacts contacting the plate-shaped area and forming corners of a quadrangle, two neighboring corners of the quadrangle defining an edge thereof. At least one van der Pauw transresistance value in at least one van der Pauw measurement set-up of the Hall element is determined, wherein the four contacts of the Hall element form contact pairs, a contact pair comprising two contacts defining neighboring corners of the quadrangle. One contact pair supplies a current and the other contact pair measures a voltage. A relationship between the supplied current and the measured voltage defines the Van der Pauw transresistance value. The method comprises determining a stress signal which depends on the at least one Van der Pauw transresistance value and determining isotropic stress.

Abstract: An electronic device comprising a first substrate having a device area, a first sealing element comprising an anelastic material and a second sealing element being a metal. The first sealing means and the second sealing means are arranged such that the inner side or the outer side of the sealing is completely formed by the second sealing element providing hermiticity and the other side is substantially formed by the first sealing element providing a flexible sealing.

Abstract: An infrared thermal sensor for detecting infrared radiation, comprising a substrate and a cap structure together forming a sealed cavity, the cavity comprising a gas at a predefined pressure; a membrane arranged in said cavity for receiving infrared radiation; a plurality of beams for suspending the membrane; a plurality of thermocouples for measuring a temperature difference between the membrane and the substrate; wherein the ratio of the thermal resistance between the membrane and the substrate through the thermocouples, and the thermal resistance between the membrane and the substrate through the beams and through the gas is a value in the range of 0.8 to 1.2. A method of designing such a sensor, and a method of producing such a sensor is also disclosed.

Abstract: An infrared thermal sensor for detecting infrared radiation is described. It comprises a substrate and a cap structure together forming a sealed cavity. A membrane is suspended therein by a plurality of beams, each beam comprising at least one thermocouple arranged therein or thereon for measuring a temperature difference between the membrane and the substrate. At least two beams have a different length and each of the thermocouples have a substantially same constant width to length ratio such that the thermal resistance measured between the membrane and the substrate is substantially constant for each beam, and such that the electrical resistance measured between the membrane and the substrate is substantially constant for each beam. The beams may be linear, and be oriented in a non-radial direction.

Abstract: A method for assisting in operating a PWM driven motor comprising for at least one phase of the PWM driven motor: generating a pulse width modulated phase voltage scheme according to a desired phase profile with a base scaling factor, by time multiplexing a first pulse and at least a further pulse within a pulse width modulation period of the phase the first pulse having a pulse width according to a first profile, for that rotor position, multiplied with a first scaling factor, the first profile being in phase with the desired phase profile, and the at least a further pulse having a pulse width corresponds with a further profile, for that rotor position, multiplied with a further scaling factor, the further profile being not in phase with the desired phase profile, whereby the first pulse and the at least one further pulse are positioned within the pulse width modulation period of the phase in at least partially non-overlapping way.

Abstract: A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprises a membrane, and a bridge comprising a first and a second resistor pair, arranged on a first resp. second side portion of the membrane. The first resistor pair comprises a first and a second resistor (R1, R2) comprising elongated piezo-resistive strips connected in series, and located closely together, such that R1 and R2 have substantially the same temperature. The sensor has a reduced sensitivity to: a temperature gradient over the membrane, and optionally also a non-uniform stress gradient caused by packaging and a inhomogeneous disturbing electric field perpendicular to the sensor. The piezo-resistive strips of the first and second resistor may be oriented in orthogonal directions of maximum piezo-resistive coefficients. A second bridge may be added outside the membrane, for compensating for package pressure.

Abstract: A sensor integrated circuit comprising a controller and a diagnostic module in communication with the controller. The controller is configured for providing a diagnostic reporting signal being a periodic superposition signal on a sensing output of the sensor integrated circuit and/or on a supply current of the sensor integrated circuit. The periodic superposition signal has periodic pulses with a predetermined fixed pulse duration and a predetermined periodicity. The controller furthermore is configured for altering the predetermined periodicity or predetermined fixed pulse duration of the periodic superposition signal upon a fault detection in the diagnostic module communicated to the controller.

Abstract: Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

Abstract: A semiconductor chip for measuring a magnetic field based on the Hall effect. The semiconductor chip comprises an electrically conductive well having a first conductivity type, in a substrate having a second conductivity type. The semiconductor chip comprises at least four well contacts arranged at the surface of the well, and having the first conductivity type. The semiconductor chip comprises a plurality of buffer regions interleaved with the well contacts and having the first conductivity type. The buffer regions are highly conductive and the buffer region dimensions are such that at least part of the current from a well contact transits through one of its neighboring buffer regions.

Abstract: A switching control circuit includes driving a flow of direct current through an at least partially inductive load. The switching control circuit is adapted for adjusting a control current in order to activate and/or deactivate a flow of current to a load terminal. The system comprises a timer element for initiating at least one timed adjustment of the control current during activation or deactivation of the flow of current through a first semiconductor switch of the circuit so as to anticipate a state change of a component of the switching control circuit. The controller is adapted for determining a timing for the timed adjustment in a predictive manner. A method employs the various features of the switching control circuit.

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.