Abstract: A process is provided for evaluating oxygen precipitates in a single crystal silicon sample. The process comprises (a) annealing the single crystal silicon sample at a temperature sufficient to selectively grow as-grown oxygen precipitates having a size of about 25 nm or more and selectively dissolve as-grown oxygen precipitates having a size of about 25 nm or less; (b) cooling the single crystal silicon sample at a cooling rate sufficient to inhibit the nucleation of oxygen precipitates having a size of about 25 nm or less; (c) coating a surface of the single crystal silicon sample with a composition containing a metal capable of decorating oxygen precipitates; and (d) annealing the coated single crystal silicon sample at a temperature, for a duration, and in an atmosphere sufficient to decorate the oxygen precipitates in the single crystal silicon sample.