Abstract: Systems and methods are provided for determining the size of particles within a fluidized bed reactor for use with thermally decomposable silicon-containing gas. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: A wafer holder for holding a semiconductor wafer during a thermal wafer treatment process. The wafer holder includes at least three wafer supports. Each wafer support includes an upright shaft and a plurality of flexible fibers supported by the shaft in positions such that at least some of the fibers engage the semiconductor wafer when the wafer rests on the wafer supports.

Abstract: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.

Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.

Abstract: Methods are disclosed for generating a representation of flatness defects on a wafer. Data is received describing the thickness of the wafer at a plurality of points on a wafer divided into a plurality of sites. A reference plane is defined for each of the plurality of sites. For each of the sites, an upper plane and a lower plane are defined relative to the reference plane. A determination is made as to which of the plurality of points on the wafer represents a flatness defect by identifying which points are not disposed between the upper plane and lower plane. A representation is then generated depicting a location of each of the flatness defects on the wafer. In some embodiments, a single representation is generated depicting the location of flatness defects on a plurality of wafers.

Abstract: A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.

Abstract: A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.

Abstract: A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.

Abstract: A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.