Abstract: A semiconductor memory device includes a semiconductor substrate, bit line structures, storage node contacts, and isolation structures. The bit line structures, the storage node contacts, and the isolation structures are disposed on the semiconductor substrate. Each bit line structure is elongated in a first direction, and the bit line structures are repeatedly disposed in a second direction. Each storage node contact and each isolation structure are disposed between two of the bit line structures adjacent to each other in the second direction. Each storage node contact is disposed between two of the isolation structures disposed adjacent to each other in the first direction. Each isolation structure includes at least one first portion elongated in the first direction and partially disposed between one of the bit line structures and one of the storage node contacts adjacent to the isolation structure in the second direction.

Abstract: A semiconductor device comprises at least one gate structure disposed on a substrate; a first dielectric layer disposed on the substrate and contacting an outer sidewall of the at least one gate structure; a second dielectric layer having a L shape disposed on the first dielectric layer and contacting the outer sidewall of the at least one gate structure; an etch stop layer contacting the second dielectric layer, the first dielectric layer and the substrate, wherein the second dielectric layer has an upper portion and a lower portion contacting the upper portion, the upper portion extends along the outer sidewall, the lower portion extends from the outer sidewall to the etch stop layer; and an air gap between the second dielectric layer and the etch stop layer; wherein the first dielectric layer and the lower portion of the second dielectric layer have a same width.

Abstract: The present invention relates to a method of forming a memory capacitor. A substrate is provided with a plurality of storage node contacts. A patterned supporting structure is formed on the substrate, following by forming a bottom electrode conformally on surface of plural openings in the patterned supporting structure, thereby contacting the storage node contacts. A sacrificial layer is formed in the opening. A soft etching process is performed to remove the bottom electrode on top and partial sidewall of the patterned supporting structure, wherein the soft etching process includes using a fluoride containing compound, a nitrogen and hydrogen containing compound and an oxygen containing compound. The sacrificial layer is completely removed away. A capacitor dielectric layer and a top electrode are formed on the bottom electrode layer.

Abstract: A display device includes a plurality of sub-pixel groups, wherein each of the plurality sub-pixel groups comprises eight sub-pixels disposed in a row direction or in a column direction and the eight sub-pixels comprise two red sub-pixels; two blue sub-pixels; two green sub-pixels; and two sub-pixels of a predetermined color, wherein in each of the plurality of sub-pixel groups, a distance between the red sub-pixels or between the blue sub-pixels is less than a distance between the green sub-pixels or between the sub-pixels of the predetermined color, and the sub-pixels of the predetermined color have a luminance higher than a luminance of the red sub-pixels and the blue sub-pixels.

Abstract: A semiconductor process for improving loading effects in planarization is provided including steps of forming multiple first protruding patterns on a first region and a second region of a substrate, wherein the pattern density of the first protruding patterns in the first region is larger than the one in the second region, forming a first dielectric layer on the substrate and the first protruding patterns, wherein the first dielectric layer includes multiple second protruding patterns corresponding to the first protruding patterns below, forming a second dielectric layer on the first dielectric layer, performing a first planarization process to remove parts of the second dielectric layer, so that the top surface of the second protruding patterns are exposed, performing an etch process to remove the second protruding patterns of the first dielectric layer, removing the remaining second dielectric layer, and performing another planarization process to the first dielectric layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first gate, a gate dielectric layer, a pair of second gates, a first spacer, and a second spacer. The first gate is disposed on a substrate. The gate dielectric layer is disposed between the first gate and the substrate. The pair of second gates are disposed on the substrate and respectively located at two sides of the first gate, wherein top surfaces of the pair of second gates are higher than a top surface of the first gate. The first spacer is disposed on sidewalls of the pair of second gates protruding from the top surface of the first gate and covers the top surface of the first gate. The second spacer is disposed between the gate dielectric layer and the pair of second gates, between the first gate and the pair of second gates, and between the first spacer and the pair of second gates.

Abstract: A semiconductor memory device and a manufacturing method thereof are provided. At least one bit line structure including a first metal layer, a bit line capping layer, and a first silicon layer located between the first metal layer and the bit line capping layer is formed on a semiconductor substrate. A bit line contact opening penetrating the bit line capping layer is formed for exposing a part of the first silicon layer. A first metal silicide layer is formed on the first silicon layer exposed by the bit line contact opening. A bit line contact structure is formed in the bit line contact opening and contacts the first metal silicide layer for being electrically connected to the bit line structure. The first silicon layer in the bit line structure may be used to protect the first metal layer from being damaged by the process of forming the metal silicide layer.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a first dielectric layer on a substrate, in which a first conductor is embedded within the first dielectric layer. Next, a second dielectric layer is formed on the first dielectric layer, part of the second dielectric layer is removed to form a contact hole, and a lateral etching process is conducted to expand the contact hole to form a funnel-shaped opening. Next, a metal layer is formed in the funnel-shaped opening, and the metal layer is planarized to form a second conductor.

Abstract: A method for filling patterns includes the steps of: providing a substrate having a cell region defined thereon; forming main patterns on the substrate and within the cell region; and filling first dummy patterns adjacent to the main patterns. Preferably, each of the first dummy patterns comprises a first length along X-direction between 2 ?m to 5 ?m and a second length along Y-direction between 3 ?m to 5 ?m.

Abstract: A layout of a semiconductor device, a semiconductor device and a method of forming the same, the semiconductor device include a first fin and a second fin disposed on a substrate, a gate and a spacer. The first fin and the second fin both include two opposite edges, and the gate completely covers the two opposite edges of the first fin and only covers one sidewall of the two opposite edges of the second fin. The spacer is disposed at two sides of the gate, and the spacer covers another sidewall of the two opposite edges of the second fin.

Abstract: A power management device including a power management circuit is provided. The power management circuit is configured to output a first power signal and a second power signal to a pixel circuit of a display panel. The pixel circuit includes an organic light-emitting diode. The organic light-emitting diode includes an anode terminal and a cathode terminal. The anode terminal is coupled to the first power signal. The cathode terminal is coupled to the second power signal. The second power signal is an alternating-current voltage. In addition, a pixel circuit of a display panel, and a power management method for the pixel circuit of the display panel are also provided.

Abstract: A semiconductor structure for electrostatic discharge (ESD) protection is provided. The semiconductor structure includes a substrate, a first doped well, a source doped region, a drain doped region, and a gate structure. The first doped well is disposed in the substrate and has a first conductive type. The source doped region is disposed in the substrate and has a second conductive type opposite to the first conductive type. The drain doped region is disposed in the substrate and has the second conductive type. The gate structure is disposed on the substrate and between the source doped region and the drain doped region. The gate structure is separated from the source doped region.

Abstract: A static random access memory (SRAM) cell structure includes a first inverter. The first inverter includes a first transistor and a second transistor. The first transistor includes a first source electrode and a first drain electrode. The first source electrode is connected to a first voltage source. The first source electrode includes a first doped region and a second doped region disposed in the first doped region, and a conductivity type of the second doped region is complementary to a conductivity type of the first doped region. The first drain electrode is connected to a first storage node. The second transistor includes a second source electrode and a second drain electrode. The second source electrode is connected to a second voltage source. The second drain electrode is connected to the first storage node.

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.

Abstract: A local dimming control method for a backlight module having a plurality of light emitting diodes is provided. The local dimming control method includes the steps of determining an initial duty cycle of a driving signal, calculating brightness of each light emitting diode according to the initial duty cycle, calculating a local luminance of each light emitting diode based on combination of brightness of that light emitting diode and light diffusion of surrounding light emitting diodes, calculating a cost function of clipping error and leaking error according to the local luminance of each light emitting diode and an ideal brightness of the corresponding pixel, calculating a gradient of the cost function of clipping error and leaking error, and adjusting the initial duty cycle according to the gradient, and image characteristics of the pixel and the surrounding pixels to provide an adjusted duty cycle of the driving signal.

Abstract: A video processing apparatus and a video processing circuit of the video processing apparatus are provided. The video processing circuit includes a video processor, a first memory controller, a second memory controller and a distributor. The video processor includes at least one sub-processing-tasks processor which is configured to execute one or more sub-processing tasks respectively. The first memory controller controls a first memory. The second memory controller controls a second memory. The distributor stores the data outputted by the video processor to the first memory and the second memory through the first memory controller and the second memory controller respectively.

Abstract: A semiconductor device includes at least one wafer and at least one TSV (through silicon via) structure. The at least one wafer each includes a substrate, an isolation structure, and a conductive pad. The isolation structure is formed in the substrate and extends from a first side of the substrate toward a second side opposite to the first side of the substrate. The conductive pad is formed at a dielectric layer disposed on the first side of the substrate, wherein the conductive pad is electrically connected to an active area in the substrate. The at least one TSV structure penetrates the at least one wafer. The conductive pad contacts a sidewall of the at least one TSV structure, and electrically connects the at least one TSV structure and the active area in the substrate. The isolation structure separates from and surrounds the at least one TSV structure.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contact in a direction is less than a width of a bottom surface of each storage node contact.

Abstract: A channel circuit of source driver and an operation method thereof are provided. The channel circuit includes a digital-to-analog converter (DAC), a first switch, an output buffer circuit and a pre-charge circuit. The terminals of the first switch are coupled to the first output terminal of the DAC and the first input terminal of the output buffer circuit, respectively. The pre-charge circuit is coupled to the first input terminal of the output buffer circuit. The pre-charge circuit pre-charges the first input terminal of the output buffer circuit when the first switch is turned off during a pre-charge period, and not to pre-charge the first input terminal of the output buffer circuit when the first switch is turned on during a normal operation period.

Abstract: A channel circuit of a source driver, including a first digital-to-analog converter (DAC), a second DAC, a first switch, a second switch and an output buffer circuit, is provided. The output terminal of the output buffer circuit is configured to be coupled to a data line of a display panel. An output terminal of the first DAC is coupled to a first input terminal among the input terminals of the output buffer circuit. An output terminal of the second DAC is coupled to a second input terminal among the input terminals of the output buffer circuit. The first switch is disposed along a first signal path between the output terminal of the first DAC and the output terminal of the output buffer circuit. The second switch is disposed along a second signal path between the output terminal of the second DAC and the output terminal of the output buffer circuit.