Abstract: A processing device in a memory system determines that a number of commands from an active queue that have been executed on a memory device does not satisfy an executed transaction threshold criterion, that a number of pending commands in an inactive queue satisfies a first promotion threshold criterion, and that a number of pending commands in the active queue does not satisfy a second promotion threshold criterion. In response, the processing device switches an execution grant from the active queue to the inactive queue.

Abstract: Disclosed herein are methods, apparatuses and systems related to manage memory blocks. A memory system can track a duration while a memory block remains open for programming operations. When the tracked duration meets or exceeds a corresponding threshold, the memory system can implement an internally commanded programming operation to store predetermined data into an open location that is adjacent to an end of the previously-written data in the memory block.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. A through-array-via (TAV) region comprises TAVs that individually extend through the lowest conductive tier and into the conductor tier. Individual of the TAVs in the lowest conductive tier comprise a conductive core having an annulus circumferentially there-about. The annulus has dopant therein at a total dopant concentration of 0.01 to 30 atomic percent.

Abstract: A microelectronic device comprises a stack structure comprising insulative structures vertically interleaved with conductive structures, first support pillar structures vertically extending through the stack structure in a first staircase region including steps defined at edges of tiers of the insulative structures and conductive structures, and second support pillar structures vertically extending through the stack structure in a second staircase region including additional steps defined at edges of additional tiers of the insulative structures and conductive structures, the second support pillar structures having a smaller cross-sectional area than the first support pillar structures. Related memory devices, electronic systems, and methods are also described.

Abstract: Methods, systems, and devices for evaluation of memory device health monitoring logic are described. For example, a memory device may include health monitoring logic operable to activate certain internal health monitors of a set of multiple monitors and to communicate an output associated with the activated monitors. In a first mode of operation, the health monitoring logic may provide a single output that is generated from multiple outputs of the set of monitors. In a second mode of operation, the health monitoring logic may cycle through certain monitors (e.g., in a test mode), and may generate an output corresponding to respective active monitors as it cycles through the set of monitors. The health monitoring logic may communicate an output specific to each monitor to a host device such that the host device may evaluate an output from each monitor of the set of monitors.

Abstract: A buffer management component of a memory sub-system configures a plurality of read buffers in a data path associated with a memory device; receives a first read command to read data stored at the memory device; selects a first read buffer to receive the first data; responsive to selecting the first buffer, initiates a read operation to retrieve the first data from the memory device and store the first data in the first read buffer; receives a second read command to read a second data stored at the memory device, where second read command is received before first read command has been completed; determines whether a second read buffer is available to receive the second data; responsive to determining that the second read buffer is available, selects the second read buffer to receive the second data for the second read command; and responsive to selecting the second read buffer, initiates a second read operation to retrieve the second data from the memory device and store the first data in the second read buff

Abstract: Methods, systems, and devices supporting configurable resistivities for lines in a memory device, such as access lines in a memory array are described. For example, metal lines at different levels of a memory device may be oxidized to different extents in order for the lines at different levels of the memory device to have different resistivities. This may allow the resistivity of lines to be tuned on a level-by-level basis without altering the fabrication techniques and related parameters used to initially form the lines at the different levels, which may have benefits related to at least reduced cost and complexity. Lines may be oxidized to a controlled extent using either a dry or wet process.

Abstract: In some implementations, a server device may generate a machine readable code that conveys first information associated with a first entity. The server device may provide an indication of the machine readable code that indicates the first information. The server device may obtain a request to update information conveyed by the machine readable code, the request including an indication of at least one of the machine readable code or the first information. The server device may modify the first information conveyed by the machine readable code to second information, based on the request and based on authenticating the request, wherein the second information includes a first secure information layer indicating the first information and a second secure information layer indicating information indicated by the request. The server device may provide, to the communication device, an indication of at least one of the machine readable code or the second information.

Abstract: Methods, systems, and devices for idle mode temperature control for memory systems are described. A memory system may implement the use of one or more dummy access commands to reduce the effects of errors introduced by temperature changes while the memory system is in an idle mode. For example, performing one or more access commands, such as one or more read commands, may increase a temperature of a memory device and support a desired operating temperature for the memory device while the memory system is in the idle mode. The memory system may measure the temperature of the memory device during the idle mode. If the memory system determines that the temperature of the memory device has fallen below a threshold temperature, the memory system may issue a quantity of dummy access commands to the memory device, and the corresponding dummy access operations may result in a temperature increase at the memory device.

Abstract: A semiconductor device comprises a stack structure comprising decks each comprising a memory element level comprising memory elements, and a control logic level in electrical communication with the memory element level and comprising control logic devices. At least one of the control logic devices of the control logic level of one or more of the decks comprises at least one device exhibiting a gate electrode shared by neighboring vertical transistors thereof. A control logic assembly, a control logic device, an electronic system, a method of forming a control logic device, and a method of operating a semiconductor device are also described.

Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative and conductive levels. The conductive levels have terminal regions and nonterminal regions. The terminal regions are vertically thicker than the nonterminal regions. Channel material extends vertically through the stack. Tunneling material is adjacent the channel material. Charge-storage material is adjacent the tunneling material. High-k dielectric material is between the charge-storage material and the terminal regions of the conductive levels. The insulative levels have carbon-containing first regions between the terminal regions of neighboring conductive levels, and have second regions between the nonterminal regions of the neighboring conductive levels. Some embodiments include methods of forming integrated assemblies.

Abstract: Fuse logic is configured to selectively enable certain group of fuses of a fuse array to support one of column (or row) redundancy in one application or error correction code (ECC) operations in another application. For example, the fuse logic may decode the group of fuses to enable a replacement column (or row) of memory cells in one mode or application, and decodes a subset of the group of fuses to retrieve ECC data corresponding to a second group of fuses are encoded to enable a different replacement column or row of memory cells in a second mode or application. The fuse logic includes an ECC decode logic circuit that is selectively enabled to detect and correct errors in data encoded in the second group of fuses based on the ECC data encoded in the subset of fuses of the first group of fuses.

Abstract: Systems, apparatuses, and methods to secure identity chaining between software/firmware components of trusted computing base. A memory device includes a secure memory region having access control based on cryptography. The secure memory region stores component information about a second component configured to be executed after a first component during booting. Prior to using a component identity of the second component to generate a compound identifier of the first component, health of the second component to be executed is verified based on the component information stored in the secure memory region.

Abstract: Provided is a system and method for storing, via a processor, in a memory of an application specific integrated circuit (ASIC), one or more threshold values responsive to at least one of physical layer and processing layer operating conditions of the ASIC. Also included is monitoring at least one of a physical layer operating condition value and a processing layer performance condition value of the ASIC, the moderating forming a monitored value, comparing the monitored value with the stored threshold values, and throttling processing layer performance of the ASIC when the monitored value exceeds at least one of the stored threshold values.

Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.

Abstract: Apparatuses and methods for selective communication through a memory connector via switching circuitry. An apparatus includes a memory connector, a memory bus corresponding to a memory protocol, one or more communication buses corresponding to one or more communication protocols, and switching circuitry operably coupled between the memory connector and the memory bus and the one or more communication buses. The one or more communication protocols are different from the memory protocol. The switching circuitry is configured to selectively operably couple any one of the memory bus and the one or more communication buses to the memory connector to enable communication through the memory connector using any one of the memory protocol or the one or more communication protocols.

Abstract: A processing device determines difference error counts that are indicative of relative widths of valleys. Each of the valleys is located between a respective pair of programming distributions of memory cells of the memory device. A program targeting operation is performed on a memory cell of the memory device to calibrate one or more program verify (PV) targets associated with the programming distributions. To perform the program targeting operation, a rule from a set of rules is selected based on the difference error counts. The set of rules corresponds to an adjusting of a PV target of a last programming distribution. One or more program verify (PV) targets associated with the programming distributions are adjusted based on the selected rule.

Abstract: A package substrate for connecting together semiconductor devices with other semiconductor device packages. The package substrate includes an exposed core layer with at least one via exposing a conductive layer of the package substrate. A first portion of the package substrate may include a solder mask on top and bottom surfaces. A first semiconductor device may be connected to the first portion of the package substrate. Layers of a second portion of the package substrate are removed to expose a core layer and vias are created in the exposed core layer to expose the conductive layer. Conducive material at least partially filling the vias may be used to connect a semiconductor device package to the second portion of the package substrate. The semiconductor device packages may communicate through conductive layers in the package substrate. The package substrate may be used to connect the semiconductor packages to a motherboard.

Abstract: A server system to customize firmware of an endpoint via an online firmware store in connection with validating authenticity of the endpoint. For example, a customized version of firmware can be ordered for the endpoint prior to the use of the endpoint. After receiving a request having identity data generated by a memory device configured in the endpoint, the server system can determine, based on a secret of the memory device, the authenticity of the endpoint having the current firmware. An update to firmware stored in the memory device and executed in the endpoint to generate the request is identified. The server system generates a verification code for a command executable in the memory device to perform the update. After receiving the command and the verification code, the memory device validates the verification code to determine whether to execute the command for firmware update.

Abstract: Methods, systems, and devices for unmap backlog in a memory system are described. A memory system may be configured to support receiving an unmap command from a host system and signaling, to the host system, an indication that the unmap command has been processed (e.g., handled, acknowledged). In response to the unmap command, the memory system may proceed with various unmap operations, which may include unmapping at least some of the associated addresses after indicating that the unmap command has been processed. For example, a memory system may implement an unmap backlog table to identify sections of addresses that are to be unmapped (e.g., after indicating that the unmap command has been processed). In some examples, the memory system may support various aspects of prioritization between unmap operations (e.g., background unmap operations) and other access operations such as read operations, write operations, or other access operations.