Abstract: Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense/access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense/access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.

Abstract: Methods, systems, and devices for data inversion techniques are described to enable a memory device to transmit or receive a multi-symbol signal that includes more than two (2) physical levels. Some portions of some multi-symbol signals may be inverted. A transmitting device may determine to invert one or more data symbols based on one or more parameters. A receiving device may determine that one or more data symbols are inverted and may re-invert the one or more data symbols (e.g., to an original value). When receiving or transmitting a multi-symbol signal, a device may invert or re-invert a data symbol by changing a value of one bit of the data symbol. Additionally or alternatively, a device may invert or re-invert a data symbol of a multi-symbol signal by inverting a physical level of the signal across an axis located between or associated with one or more physical levels.

Abstract: Methods, systems, and devices for techniques for sequential access operations are described. In some cases, a memory system may be configured to suppress storing a checkpoint while in a sequential write mode. While in the sequential write mode, the memory system may initiate and store a first a checkpoint, along with an indication that the checkpoint was stored as part of the sequential write mode. Subsequently, the memory system may initiate a second checkpoint and suppress storing the second checkpoint. In some cases, to rebuild an address mapping after an asynchronous power loss, the memory system may access a last stored checkpoint to determine whether the checkpoint was stored as part of a sequential write mode. The memory system may generate logical addresses for data stored after the last checkpoint and before the asynchronous power loss using a starting logical address, as well as an ending logical address.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device includes a sense amplifier, a counter, and memory having memory cells. Access lines are used to select the memory cells for performing write operations. The memory device includes a controller to control the applying of a voltage to the memory cell. The voltage is applied during a write operation using the access lines. The sense amplifier is used to determine whether the memory cell reaches a threshold state or snaps. In response to determining that the memory cell does not snap, a write error count is incremented using the counter. The controller reads the counter to determine the write error count, and based on the write error count, the controller performs one or more media management or memory device control actions.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device has a memory array including memory cells. A controller of the memory device evaluates background leakage in order to select a write voltage to apply to a memory cell when performing a programming operation. The write voltage is dynamically selected from two or more write voltages. These write voltages include a first write voltage that is a normal or default voltage, and a second write voltage that is a boosted write voltage. The controller applies a pre-sensing voltage and pre-read voltage to the memory cell, and determines first and second respective currents that result from applying these voltages. In response to determining that the first current exceeds a first threshold (indicating background leakage), and the second current is below a second threshold that is greater than the first threshold (indicating that the memory cell does not snap), the controller selects the second (boosted) write voltage.

Abstract: Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A sensing time is determined using the cycle number and the group. The command is executed using the sensing time.

Abstract: A security server storing a plurality of cryptographic keys to support device authentication, access control and proof of space plot farming. The cryptographic keys can include a first cryptographic key representative of an identity of a memory device, a second cryptographic key representative of a privilege to access a memory region in the memory device, and a third cryptographic key representative of a pool of proof of space plots. The security server can sign blocks in a blockchain created via plots in the pool, sign commands to access the memory region, and secure transfer of the second and/or third cryptographic key to the computer operated by an owner of the memory device.

Abstract: A read command is received by a processing device coupled to a memory device. The read command specified a logical address. The processing device translates the logical address into a physical address of a physical block of the memory device, wherein the physical address specifies a wordline and a memory device die. Responsive to determining that the physical block is partially programmed, the processing device identifies a threshold voltage offset associated with the wordline. The processing device computes a modified threshold voltage by applying the threshold voltage offset to a read level associated with the memory device die. The processing device reads the data from the physical block using the modified threshold voltage.

Abstract: Apparatuses, systems, and methods for managing storage and retrieval of metadata at a memory. A metadata column address generator, during an metadata access operation, is configured to decode a subset of less than all of the bits of the column address to determine a metadata column address and a metadata column plane address corresponding to a particular one of column planes of a memory array. A column decoder is configured to facilitate a double cycle access operation to write data to or retrieve data from the plurality of column planes based on the column address and to write metadata to or retrieve metadata from a particular column corresponding to the metadata column address of the particular one of the column planes corresponding to the column plane address.

Abstract: Implementations described herein relate to boot processes for memory devices. In some implementations, a controller of a storage system receives a command for enabling a fast bootup process for the storage system. The fast bootup process may exclude a measurement of information retrieved from a memory device of the storage system during the fast bootup process. The controller may enable the fast bootup process based on the command. The controller may disable a normal bootup process for the storage system based on the fast bootup process being enabled. The normal bootup process may include a measurement of information retrieved from the memory device during the normal bootup process.

Abstract: Methods, systems, and devices for dynamic low power mode are described. An apparatus may include a memory device and a controller. The controller may receive a command to transition from a first power state to a second power state, the first power state associated with executing received command and the second power state associated with deactivating one or more components of the memory device. The controller may execute, while in the first power state, a set of operations associated with the transition from the first power state to second power state. The controller may determine whether a duration to execute the set of operations satisfies a delay duration between receiving the command and transitioning to the second power state from the first power state. The controller may transition from the first power state to the second power state based on determining whether the duration satisfies the delay duration.

Abstract: A method includes determining, by component of a memory sub-system, workload characteristics corresponding to a workload to be received by the memory sub-system. The method can further include dynamically altering a performance attribute of the memory sub-system based, at least in part, based on the determined workload characteristics.

Abstract: Provided is a memory system including a plurality of memory submodules and a controller. Each submodule comprises a plurality of memory channels, each channel having a parity bit and a redundant array of independent devices (RAID) parity channel. The controller is configured to receive a block of data for storage in the plurality of memory submodules and determine whether a level of data traffic demand for a first of the plurality of submodules is high or low. When the data traffic demand is low, (i) writing a portion of the block of data in the first of the plurality of submodules and (ii) concurrently updating the parity bit and the RAID parity channel associated with the block of data. When the data traffic demand is high, (i) only writing the portion of the block of data in the first of the plurality of submodules and (ii) deferring updating of the parity bits and the RAID parity channel associated with the block of data.

Abstract: Methods, systems, and devices for rating-based mapping of data to memory are described. A memory system may determine a first rating for a set of data selected for writing to a memory system. The memory system may select a target page of a block in the memory system for writing the set of data based at least in part on a second rating for the target page. The memory system may write the set of data to the target page based at least in part on the first rating for the set of data corresponding to the second rating for the target page.

Abstract: A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.

Abstract: Apparatuses and methods for shared row and column address buses. Row and column addresses are distributed along separate respective global buses in a central logic region of a memory. The row and column addresses are coupled through a shared address bus from the central logic region to a bank logic region. For example the row address may be provided along the shared address bus at a first time and the column address may be provided along the shared address bus at a second time.

Abstract: Described apparatuses and methods provide automated error correction with memory refresh. Memory devices can include error correction code (ECC) technology to detect or correct one or more bit-errors in data. Dynamic random-access memory (DRAM), including low-power double data rate (LPPDR) synchronous DRAM (SDRAM), performs refresh operations to maintain data stored in a memory array. A refresh operation can be a self-refresh operation or an auto-refresh operation. Described implementations can combine ECC technology with refresh operations to determine a data error with data that is being refreshed or to correct erroneous data that is being refreshed. In an example, data for a read operation is checked for errors. If an error is detected, a corresponding address can be stored. Responsive to the corresponding address being refreshed, corrected data is stored at the corresponding address in conjunction with the refresh operation. Alternatively, data being refreshed can be checked for an error.

Abstract: Memory cells, and memories and memory array structures containing such memory cells, might include a control gate, a channel, a gate dielectric between the channel and the control gate, a charge-storage node between the gate dielectric and the control gate, a charge-blocking material between the charge-storage node and the control gate, a laminated dielectric between the charge-blocking material and the control gate, and a high-K dielectric between the laminated dielectric and the control gate, wherein the laminated dielectric comprises an instance of a first dielectric material between the charge-blocking material and the high-K dielectric and an instance of a second dielectric material between the instance of the first dielectric material and the high-K dielectric, and wherein the instance of the first dielectric material has a higher oxygen areal density than an oxygen areal density of the instance of the second dielectric material.

Abstract: Methods, systems, and devices for valid data identification for garbage collection are described. In connection with writing data to a block of memory cells, a memory system may identify a portion of a logical address space that includes a logical address for the data. The memory system may set a bit of a bitmap, which may indicate that the block includes data having a logical address within a portion of the logical address space corresponding to the bit. The logical address space may be divided into any quantity of portions, each corresponding to a different subset of a logical-to-physical (L2P) table, and the bitmap may include any quantity of corresponding bits. To perform garbage collection on the block, the bitmap may be used to identify one or more subsets of the L2P table to evaluate to determine whether different sets of data within the block are valid or invalid.

Abstract: A device includes a first memory die and a second memory die directly coupled to the first memory die via a first bus. The device also includes a second bus directly coupled to the first memory die. The first memory die includes a first trim circuit that when in operation adjusts a delay of signal transmission by the first memory die to a first value, while the second memory die comprises a second trim circuit that when in operation adjusts a delay of signal transmission by the second memory die to a second value.