Abstract: Implementations described herein relate to burst data read storage. In some implementations, a controller may receive a write command. The controller may determine whether a burst read flag, included in the write command, is set. The controller may write host data, associated with the write command, to a first type of storage block of the memory device or to a second type of storage block of the memory device based on whether the burst read flag is set.

Abstract: Methods, systems, and devices for host verification for a memory device are described. A memory device may receive a first value from a host device that is associated with an identification of the host device after an event. The memory device may transmit a second value to the host device that is based on the first value and comprises a random set of bits. The memory device may receive from the host device data or a command that comprises an encrypted third value that is based at least in part on the second value and a secret shared between the host device and the memory device. The memory device may also enable a functionality of the memory device based on the encrypted third value.

Abstract: Systems, apparatuses, and methods related to channel architecture for memory devices are described. Various applications can access data from a memory device via a plurality of channels. The channels can be selectively enabled or disabled based on the behavior of the applications. For instance, an apparatus in the form of a memory system can include an interface coupled to a controller and a plurality of channels. The controller can be configured to determine an aggregate amount of bandwidth used by a plurality of applications accessing data from a memory device coupled to the controller via the plurality of channels and disable one or more channels of the plurality of channels based, at least in part, on the aggregate amount of bandwidth used by the plurality of applications.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: Bake temperatures for memory blocks can be determined as part of an operation to allocate memory blocks for us by a memory device. If a temperature of a particular memory block among the plurality of memory blocks meets or exceeds a threshold operational temperature corresponding to a memory device containing the plurality of memory blocks, the particular memory block can be allocated for receipt and/or storage of data.

Abstract: Secure communication in accessing a network is described herein. An example apparatus can include a memory and a processor coupled to the memory. The processor can be configured to receive an identity public key from the identity device. The identity public key can be received in response to providing, to the identity device, a request to modify content of the identity device. The processor can be further configured to encrypt data corresponding to subscriber information using the identity public key, provide (to the identity device) the encrypted data to store the subscriber information in the identity device, and access a network operated by a network operator via the data stored in the identity device.

Abstract: A deferred error correction code (ECC) scheme for memory devices is disclosed. In one embodiment, a method is disclosed comprising starting a deferred period of operation of a memory system in response to detecting the satisfaction of a condition; receiving an operation during the deferred period, the operation comprising a read or write operation access one or more memory banks of the memory system; deferring ECC operations for the operation; executing the operation; detecting an end of the deferred period of operation; and executing the ECC operations after the end of the deferred period.

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

Abstract: Methods, apparatuses and systems related to managing deck-specific read levels are described. The apparatus may include a memory array having the memory cells organized into two or more decks. The apparatus can determine a delay between programming the decks. The apparatus can derive and implement the deck-specific read levels by selectively adjusting a base read level with an offset level according to the delay and/or the targeted read location.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells, with the memory cells individually comprising a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. At least a portion of the channel region is horizontally-oriented for horizontal current flow in the portion between the first and second source/drain regions. A capacitor of the memory cell comprises first and second electrodes having a capacitor insulator there-between. The first electrode is electrically coupled to the first source/drain region. A horizontal longitudinally-elongated sense line is in individual of the memory-cell tiers. Individual of the second source/drain regions of individual of the transistors that are in the same memory-cell tier are electrically coupled to the horizontal longitudinally-elongated sense line in that individual tier of memory cells.

Abstract: Implementations described herein relate to memory device operations for unaligned write operations. In some implementations, a memory device may receive, from a host device, a write command indicating data having a first size that corresponds to a first write unit and a first logical address. The memory device may allocate a set of buffers for the write command. The memory device may determine a set of physical addresses corresponding to a physical address that is associated with the second size, where the set of physical addresses are each associated with the first size. The memory device may merge stored data from the set of physical addresses to one or more buffers, from the set of buffers, that do not include the data to generate a data unit having the second size. The memory device may write the data unit to memory indicated by the set of physical addresses.

Abstract: A variety of applications can include apparatus having a recessed channel FinFET. The recessed channel FinFET can include one or more fin structures between the source region and the drain region, where the one or more fin structures are recessed from a top level of the source region and from a top level of the drain region. The recessed channel FinFET can include a gate recessed from the top level of a source region and a drain region, where the gate can be separated from tip regions of the fin structures by a gate dielectric defining a channel between the source region and the drain region. Recessed channel FinFETs can be structured in a periphery to an array of a memory device and can be fabricated in a process merged with forming access lines to the array.

Abstract: Methods, systems, and devices for in-memory associative processing for vectors are described. A device may perform a computational operation on a first set of contiguous bits of a first vector and a first set of contiguous bits of a second vector. The first sets of contiguous bits may be stored in a first plane of a memory die and the computational operation may be based on a truth table for the computational operation. The device may perform a second computational operation on a second set of contiguous bits of the first vector and a second set of contiguous bits of the second vector. The second sets of contiguous bits may be stored in a second plane of the memory die and the computational operation based on the truth table for the computational operation.

Abstract: A memory device includes a memory array including a plurality of wordline groups, each wordline group of the plurality of wordline groups including a set of even wordlines and a set of odd wordlines, and control logic, operatively coupled with the memory array, to perform operations including identifying a set of failing wordline groups from the plurality of wordline groups, the set of failing wordline groups including at least one failing wordline group determined to have failed a first erase verify of an erase verify process, and causing a second erase verify of the erase verify process to be performed sequentially with respect to each failing wordline group of the set of failing wordline groups.

Abstract: Apparatuses, systems, and methods for enhanced metadata information. The memory array includes a number of column planes and an extra column plane. A memory device is set in an ×4 single-pass operational mode. In this mode, the memory may store a data codeword in a selected ones of the column planes, and metadata may be stored in a non-selected ones of the column planes and in the extra column plane. An error correction code circuit (ECC) may store parity bits associated with the data and metadata in the non-selected ones of the column planes. In this manner, the data, metadata, and parity may be accessed as part of a single access of the memory array.

Abstract: Examples described herein include systems and methods which include wireless devices and systems with examples of cross correlation including symbols indicative of radio frequency (RF) energy. An electronic device including a statistic calculator may be configured to calculate a statistic including the cross-correlation of the symbols. The electronic device may include a comparator configured to provide a signal indicative of a presence or absence of a wireless communication signal in the particular portion of the wireless spectrum based on a comparison of the statistic with a threshold. A decoder/precoder may be configured to receive the signal indicative of the presence or absence of the wireless communication signal and to decode the symbols responsive to a signal indicative of the presence of the wireless communication signal. Examples of systems and methods described herein may facilitate the processing of data for wireless communications in a power-efficient and time-efficient manner.

Abstract: Apparatuses and techniques for implementing shareable usage-based disturbance circuitry are described. Shareable usage-based disturbance circuitry includes circuits (e.g., shared circuits) that manage usage-based disturbance across at least two sections of a bank of memory within a die of a memory device. In example implementations, the shareable usage-based disturbance circuitry includes a counter circuit and/or an error-correction-code circuit that is coupled to sense amplifiers associated with two neighboring sections. With the shareable usage-based disturbance circuitry, dies within the memory device can be cheaper to manufacture, can consume less power, and can have a smaller footprint with less complex signal routing compared to other dies with other circuits dedicated to mitigating usage-based disturbance within each section.

Abstract: Described apparatuses and methods facilitate sharing redundant memory portions at a controller-level to enable memory repair between two or more memory blocks. Each memory die of multiple memory dies can include, for instance, multiple spare rows for use if a row of a memory array has a faulty bit. If a memory die has more faults than spare rows, the memory die cannot repair the additional faults. This document describes a controller that can inventory unrepaired faults and available spare rows across multiple memory dies. The controller can then “borrow” a spare row from a second memory die that has an available one and “share” the spare row with a first memory die that has a fault than it cannot repair. The controller can remap a memory access request targeting the row with the unrepaired fault in the first memory die to a spare row in the second memory die.

Abstract: Examples of systems and method described herein or generating, in a memory controller and/or memory device, access codes for memory regions of the memory device using authentication logic, and for accessing the memory device using the access codes. For example, a memory controller and/or a coupled memory device may generate access codes that a host computing device may include in a memory access request to access one or more memory regions of the memory device. Data read or written at the memory device may in some examples only be accessed in accordance with the access codes for memory regions of the memory device. Accordingly, the systems and methods described herein may provide security for specific memory regions of a memory device because the access code are updated periodically (e.g., based on obtained reset indication) or in accordance with an updated count value from a counter.

Abstract: Apparatuses and methods including circuits in gap regions of a memory array are disclosed. An example apparatus includes first and second memory mats adjacent along a first direction, and further includes a region between the first and second memory mats along the first direction. The region includes a local input/output (LIO) line that extends along a second direction perpendicular to the first direction through the region, and further includes a LIO driver and a LIO precharge circuit coupled to the LIO line. The LIO driver is configured to drive the LIO line to data voltage levels based on data read from memory cells or based on data to be written to memory cells, and the LIO precharge circuit is configured to provide a LIO precharge voltage to the LIO lines.