Abstract: Systems, apparatuses, and methods related to extended memory communication subsystems for performing extended memory operations are described. An example method can include receiving, at a processing unit that is coupled between a host device and a non-volatile memory device, signaling indicative of a plurality of operations to be performed on data written to or read from the non-volatile memory device. The method can further include performing, at the processing unit, at least one operation of the plurality of operations in response to the signaling. The method can further include accessing a portion of a memory array in the non-volatile memory device. The method can further include transmitting additional signaling indicative of a command to perform one or more additional operations of the plurality of operations on the data written to or read from the non-volatile memory device.

Abstract: Methods of operating a memory device are disclosed. A method may include receiving, at a first die of a number of dies, a first number of bits including one or more command bits, one or more identification bits, and a first number of address bits associated with a command during a first clock cycle. The method may further include conveying, from the first die to at least one other die, at least some of the first number of bits. Further, the method may include receiving, at the first die, a second number of bits including a second number of address bits associated with the command during a second, subsequent clock cycle. Also, the method may include conveying, from the first die to the at least one other die, at least some of the second number of bits. Memory devices and electronic systems are also disclosed.

Abstract: Methods, systems, and devices for timing signal calibration for a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous with an input signal. To support asynchronous timing, a timing signal generation component of a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. Delay components may have characteristics that are sensitive to fabrication or operational variability, such that timing signals may also be affected by such variability. In accordance with examples as disclosed herein, a memory device may include delay components, associated with access operation timing signal generation, that are configured to be selectively enabled or disabled based on a calibration operation of the memory device, which may improve an ability of the memory device to account for various sources of timing signal variability.

Abstract: Methods, systems, and devices for distribution-following access operations for a memory device are described. In an example, the described techniques may include identifying an activation of a first memory cell at a first condition of a biasing operation, and identifying an activation of a second memory cell at a second condition of the biasing operation, and determining a parameter of an access operation based at least in part on a difference between the first condition and the second condition. In some examples, the memory cells may be associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time.

Abstract: Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include control gate regions and distal regions proximate the control gate regions. The control gate regions have front surfaces, top surfaces and bottom surfaces. The top and bottoms surfaces extend back from the front surfaces. High-k dielectric material is along the control gate regions. The high-k dielectric material has first regions along the top and bottom surfaces, and has second regions along the front surfaces. The first regions are thicker than the second regions. Charge-blocking material is adjacent to the second regions of the high-k dielectric material. Charge-storage material is adjacent to the charge-blocking material. Gate-dielectric material is adjacent to the charge-storage material. Channel material is adjacent to the gate-dielectric material. Some embodiments include integrated assemblies.

Abstract: Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

Abstract: Apparatuses and methods for post-package repair (PPR) protection. A device may enter a PPR mode to repair one or more memory addresses by blowing fuses. However, fuses may be incorrectly blown if the device receives row activation (ACT) signals while in the PPR mode. A PPR mask circuit may provide a PPR mask signal if an ACT signal is received while the memory is in the PPR mode. The PPR mask signal may suppress further ACT signals from being provided. In some embodiments, the memory may also include a PPR function circuit, which may monitor one or more signals used as part of PPR operations. If these signals are in an illegal state, the PPR function circuit may suppress PPR operations to prevent damage to the fuse array.

Abstract: Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include control gate regions and second regions proximate to the control gate regions. High-k dielectric material wraps around ends of the control gate regions, and is not along the second regions. Charge-blocking material is adjacent to the high-k dielectric material. Charge-storage material is adjacent to the charge-blocking material. The charge-storage material is configured as segments which are vertically stacked one atop another, and which are vertically spaced from one another by gaps. Gate-dielectric material is adjacent to the charge-storage material. Channel material extends vertically along the stack and is adjacent to the gate-dielectric material. Some embodiments include integrated assemblies, and methods of forming integrated assemblies.

Abstract: An edge memory array mat with access lines that are split, and a bank of sense amplifiers formed under the edge memory array may in a region that separates the access line segment halves. The sense amplifiers of the bank of sense amplifiers are coupled to opposing ends of a first subset of the half access lines pairs. The edge memory array mat further includes access line connectors configured to connect a second subset of the half access line pairs across the region occupied by the bank of sense amplifiers to form combined or extended access lines that extend to a bank of sense amplifiers coupled between the edge memory array mat and an inner memory array mat.

Abstract: Apparatus having a controller configured to connect a string of series-connected memory cells (e.g., a NAND string) to a node, perform a sensing operation on a selected memory cell of the NAND string while the selected memory cell is connected to the node through a first field-effect transistor (FET) between the node and the NAND string and through a second FET between the first FET and the NAND string, connect a control gate of the first FET to receive a lower voltage level after performing the sensing operation, connect the control gate of the second FET to receive the lower voltage level after connecting the control gate of the first FET to receive the lower voltage level, and connect a control gate of the selected memory cell to receive the lower voltage level after connecting the control gate of the second FET to receive the lower voltage level.

Abstract: A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack comprises a cavity therein that comprises a stair-step structure. At least a portion of sidewalls of the cavity is lined with sacrificial material. Insulative material is formed in the cavity radially inward of the sacrificial material. At least some of the sacrificial material is removed from being between the cavity sidewalls and the insulative material to form a void space there-between. Insulator material is formed in at least some of the void space. Other embodiments, including structure independent of method, are disclosed.

Abstract: Apparatuses and methods for pure-time, self-adopt sampling for RHR refresh. An example apparatus includes a memory bank comprising a plurality of rows each associated with a respective row address, and a sampling timing generator circuit configured to provide a timing signal having a plurality of pulses. Each of the plurality of pulses is configured to initiate sampling of a respective row address associated with a row of the plurality of rows to detect a row hammer attack. The sampling timing generator includes first circuitry configured to provide a first subset of pulses of the plurality of pulses during a first time period and includes second circuitry configured to initiate provision of a second subset of pulses of the plurality of pulses during a second time period after the first time period.

Abstract: A method used in forming an array of memory cells comprises forming lines of top-source/drain-region material, bottom-source/drain-region material, and channel-region material vertically there-between in rows in a first direction. The lines are spaced from one another in a second direction. The top-source/drain-region material, bottom-source/drain-region material, and channel-region material have respective opposing sides. The channel-region material on its opposing sides is laterally recessed in the second direction relative to the top-source/drain-region material and the bottom-source/drain-region material on their opposing sides to form a pair of lateral recesses in the opposing sides of the channel-region material in individual of the rows. After the pair of lateral recesses are formed, the lines of the top-source/drain-region material, the channel-region material, and the bottom-source/drain-region material are patterned in the second direction to comprise pillars of individual transistors.

Abstract: Semiconductor devices having busing layouts configured to reduce on-die capacitance are disclosed herein. In one embodiment, a semiconductor device includes an electrostatic discharge device electrically connected in parallel with an integrated circuit and configured to divert high voltages generated during an electrostatic discharge event away from the integrated circuit. The semiconductor device further includes a signal bus and a power bus electrically connected to the electrostatic discharge device. The signal bus includes a plurality of first fingers grouped into first groups and the power bus includes a plurality of second fingers grouped into second groups. The first groups are positioned generally parallel to and interleaved between the second groups.

Abstract: Devices and techniques are disclosed herein to compensate for variance in one or more electrical parameters across multiple signal lines of an array of memory cells. A compensation circuit can provide a bias signal to a first one of the multiple signal lines, the bias signal having an overdrive voltage greater than a target voltage by a selected increment for a selected overdrive period.

Abstract: Representative apparatus, method, and system embodiments are disclosed for a self-scheduling processor which also provides additional functionality. Representative embodiments include a self-scheduling processor, comprising: a processor core adapted to execute instructions; and a core control circuit adapted to automatically schedule an instruction for execution by the processor core in response to a received work descriptor data packet. In a representative embodiment, the processor core is further adapted to execute a non-cached load instruction to designate a general purpose register rather than a data cache for storage of data received from a memory circuit. The core control circuit is also adapted to schedule a fiber create instruction for execution by the processor core, and to generate one or more work descriptor data packets to another circuit for execution of corresponding execution threads.

Abstract: A garbage collection operation can be performed on one or more data blocks of a memory sub-system, where data is stored at the one or more data blocks using a first write mode. In response to determining that the garbage collection operation satisfies a performance condition, a determination is made as to whether a data block of a cache area of the memory sub-system satisfies an endurance condition, where data is stored at the data block of the cache area using a second write mode. A write mode for the data block of the cache area is changed from the second write mode to the first write mode responsive to determining that the data block satisfies the endurance condition. The data block of the cache area is then used in the garbage collection operation.

Abstract: Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. Channel material extends vertically along the stack. The wordline levels include conductive regions which have a first metal-containing material and a second metal-containing material. The first metal-containing material at least partially surrounds the second metal-containing material. The first metal-containing material has a different crystallinity than the second metal-containing material. In some embodiments the first metal-containing material is substantially amorphous, and the second metal-containing material has a mean grain size within a range of from greater than or equal to about 5 nm to less than or equal to about 200 nm. Charge-storage regions are adjacent the wordline levels. Charge-blocking regions are between the charge-storage regions and the conductive regions.

Abstract: An integrated circuit (IC) memory device encapsulated within an IC package. The memory device includes first memory regions configured to store lists of operands; a second memory region configured to store a list of results generated from the lists of operands; and at least one third memory region. A communication interface of the memory device can receive requests from an external processing device; and an arithmetic compute element matrix can access memory regions of the memory device in parallel. When the arithmetic compute element matrix is processing the lists of operands in the first memory regions and generating the list of results in the second memory region, the external processing device can simultaneously access the third memory region through the communication interface to load data into the third memory region, or retrieve results that have been previously generated by the arithmetic compute element matrix.

Abstract: Techniques for memory I/O tests using integrated test data paths are provided. In an example, a method for operating input/output data paths of a memory apparatus can include receiving, during a first mode, non-test information at a data terminal of a first channel of the memory apparatus from a memory array of the first channel via a first data path, receiving during a first test mode, first test information at the data terminal of the first channel from a first additional data path coupling the first channel with a second channel of the memory apparatus, and wherein an interface die of the memory apparatus includes the first data path and the additional data path.