Abstract: The address of victim rows may be determined based on rows that are accessed in a memory. The victim addresses may be stored and associated with a count for every time a victim row is “victimized.” When the count for a victim row reaches a threshold, the victim row may be refreshed to preserve data stored in the row. After the victim row has been refreshed, the count may be reset. When a victim row is accessed, the count may also be reset. The counts may be adjusted for closer victim rows (e.g., +/?1) at a faster rate than counts for more distant victim rows (e.g., +/?2). This may cause closer victim rows to be refreshed at a higher rate than more distant victim rows.

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: A vertical 3D memory device may comprise: a substrate including a plurality of conductive contacts each coupled with a respective one of a plurality of digit lines; a plurality of word line plates separated from one another with respective dielectric layers on the substrate, the plurality of word line plates including at least a first set of word lines separated from at least a second set of word lines with a dielectric material extending in a serpentine shape and at least a third set of word lines separated from at least a fourth set of word lines with a dielectric material extending in a serpentine shape; at least one separation layer separating the first set of word lines and the second set of word lines from the third set of word lines and the fourth set of word lines, wherein the at least one separation layer is parallel to both a digit line and a word line; and a plurality of storage elements each formed in a respective one of a plurality of recesses such that a respective storage element is surrounded

Abstract: The present disclosure includes apparatuses and methods for buffer reset commands for write buffers. An example apparatus includes a memory and a controller coupled to the memory. The memory can include an array of resistance variable memory cells configured to store data corresponding to a managed unit across multiple partitions each having a respective write buffer corresponding thereto. The controller can be configured to update the managed unit by providing, to the memory, a write buffer reset command followed by a write command. The memory can be configured to execute the write buffer reset command to place the write buffers in a reset state. The memory can be further configured to execute the write command to modify the content of the write buffers based on data corresponding to the write command and write the modified content of the write buffers to an updated location in the array.

Abstract: Methods, systems, and devices for techniques for determining memory cell read offsets are described to support determining voltage offsets and corresponding read voltage levels for one or more memory cell levels using a relationship between read voltage levels and voltage offsets. A memory device may estimate first voltage offsets using a first procedure and may perform a read operation using the first voltage offsets. If a first voltage offset results in a read error for a corresponding memory cell level, the memory device may determine an updated voltage offset using the relationship. The relationship may predict a voltage offset for a given read voltage level, such that the memory device may use the relationship to predict an updated voltage offset for a memory cell level. The memory device may use the updated voltage offset(s) to perform a second read operation for the one or more memory cells.

Abstract: A write request to program data to a memory device of a memory sub-system is received. An intermediate entry of a data structure is generated, the intermediate entry including a pointer identifying a write buffer associated with an intermediate write operation corresponding to the write request. A read request to read the data from the memory device is received and a look-up operation of the data structure is performed to identify the intermediate entry. Using the pointer to locate the write buffer associated with the intermediate write operation. The write buffer is copied to a read buffer associated with the read request and the read request is executed using the read buffer.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for determining extremum numerical values. Numerical values may be stored in files of a stack, with each bit of the numerical value stored in a content addressable memory (CAM) cell of the file. Each file may be associated with an accumulator circuit, which provides an accumulator signal. An extremum search operation may be performed where a sequence of comparison bits are compared in a bit-by-bit fashion to each bit of the numerical values. The accumulator circuits each provide an accumulator signal which indicates if the numerical value in the associated file is an extremum value or not. Examples of extremum search operations include finding a maximum of the numerical values and a minimum of the numerical values.

Abstract: Methods, systems, and devices for spare substitution in a memory system are described. Aspects include a memory device identifying a rotation index that indicates a first assignment of logical channel to physical channels for code words stored in a memory medium. The memory device may use a pointer to indicate one or more code word addresses that are to be rotated and update a value of the pointer associated with a range for the rotation index based on a condition being satisfied. The memory device may rotate a first code word according to a first assignment of the rotation index, where the rotating may occur at an address of the memory medium corresponding to the updated value of the pointer. Additionally, the memory device may execute access operations on the memory medium that include multiplexing multiple logical channels to multiple physical channels based on the rotation index and the pointer.

Abstract: Devices and techniques are disclosed herein for remapping data of flash memory indexed by logical block addresses (LBAs) of a host device in response to re-map requests received at a flash memory system from the host device or in response to re-map requests generated at the flash memory system.

Abstract: Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. The wordline levels have conductive terminal ends within control gate regions. The control gate regions are vertically spaced from one another by first insulative regions which include first insulative material. Charge-storage material is laterally outward of the conductive terminal ends, and is configured as segments. The segments of the charge-storage material are arranged one atop another and are vertically spaced from one another by second insulative regions which include second insulative material. The second insulative material has a different dielectric constant than the first insulative material. Charge-tunneling material extends vertically along the stack, and is adjacent to the segments of the charge-trapping material. Channel material extends vertically along the stack, and is adjacent to the charge-tunneling material.

Abstract: Some embodiments include an integrated assembly having capacitor-contact-regions. Metal-containing interconnects are coupled with the capacitor-contact-regions. A first insulative material is between the metal-containing interconnects. A second insulative material is over the first insulative material. A third insulative material is over the second insulative material. First capacitor electrodes extend through the second and third insulative materials and are coupled with the metal-containing interconnects. Fourth insulative material is adjacent the first capacitor electrodes. Capacitor plate electrodes are adjacent the fourth insulative material and are spaced from the first capacitor electrodes by the fourth insulative material. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having digit lines which extend along a first direction, and which are spaced from one another by intervening regions. Each of the intervening regions has a first width along a cross-section. Pillars extend upwardly from the digit lines; and the pillars include transistor channel regions extending vertically between upper and lower source/drain regions. Storage elements are coupled with the upper source/drain regions. Wordlines extend along a second direction which crosses the first direction. The wordlines include gate regions adjacent the channel regions. Shield lines are within the intervening regions and extend along the first direction. The shield lines may be coupled with at least one reference voltage node. Some embodiments include methods of forming integrated assemblies.

Abstract: A main word driver may be coupled to a subword driver to drive a main word line to select the subword driver. The main word driver may include a first transistor having a body and source/drain both coupled to a well. The main word driver may include a well control circuit configured to bias the well. In some examples, the well control circuit may provide a first low potential to the well followed by a second low potential lower than the first potential responsive to a precharge command. The main word driver may include a second transistor coupled to the well control circuit to receive the first and second low potentials and couple the first and second low potentials to the main word line. The body of the second transistor may be coupled to the well. Additional transistors in the main word driver may also be coupled to the well.

Abstract: Examples described herein include methods, devices, and systems which may compensate input data for nonlinear power amplifier noise to generate compensated input data. In compensating the noise, during an uplink transmission time interval (TTI), a switch path is activated to provide amplified input data to a receiver stage including a recurrent neural network (RNN). The RNN may calculate an error representative of the noise based partly on the input signal to be transmitted and a feedback signal to generate filter coefficient data associated with the power amplifier noise. The feedback signal is provided, after processing through the receiver, to the RNN. During an uplink TTI, the amplified input data may also be transmitted as the RF wireless transmission via an RF antenna. During a downlink TTI, the switch path may be deactivated and the receiver stage may receive an additional RF wireless transmission to be processed in the receiver stage.

Abstract: Examples described herein include systems and methods, including wireless devices and systems with neuron calculators that may perform one or more functionalities of a wireless transceiver. The neuron calculator calculates output signals that may be implemented, for example, using accumulation units that sum the multiplicative processing results of ordered sets from ordered neurons with connection weights for each connection between an ordered neuron and outputs of the neuron calculator. The ordered sets may be a combination of some input signals, with the number of signals determined by an order of the neuron. Accordingly, a kth-order neuron may include an ordered set comprising product values of k input signals, where the input signals are selected from a set of k-combinations with repetition. As an example in a wireless transceiver, the neuron calculator may perform channel estimation as a channel estimation processing component of the receiver portion of a wireless transceiver.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, methods for an internet of things (IoT) system to include edge devices that perform at least some functions without communicating with a cloud computing system. An edge device may include a memory with on-memory pattern matching capabilities. The edge device may perform pattern matching operations on data collected by the edge device or sensors in communication with the edge device. Based on results of the pattern matching operations, the edge device may perform various functions, such as transmitting data to the cloud computing system, activating an alarm, and/or changing a frequency at which data is transmitted.

Abstract: Apparatuses, systems, and methods for fuse based device identification. A device may include a number of fuses which are used to encode permanent information on the device. The device may receive an identification request, and may generate an identification number based on the states of at least a portion of the fuses. For example, the device may include a hash generator, which may generate the identification number by using the fuse information as a seed for a hash algorithm.

Abstract: Apparatus and methods of reducing dock path power consumption are described herein. According to one embodiment, an example apparatus includes a clock control circuit. The clock control circuit includes a command/address domain configured to selectively provide a command/address clock signal based, at least in part, on a chip select signal. The clock control circuit further includes a command domain circuit configured to selectively provide a command clock signal based, at least in part, on the chip select signal. The clock control circuit further includes a column latency domain circuit configured to selectively provide a column latency clock signal based, at least in part, on a memory command. The clock control circuit further includes a four phase domain circuit configured to selectively provide a four phase clock signal based, at least in part, on the memory command.

Abstract: A vehicle is personalized to perform at least one action (e.g., control of acceleration or navigation of the vehicle) based on configuration data for a user of the vehicle. For example, when a car is rented by a user that is a driver, the car recognizes the driver and sets itself up accordingly. In some cases, an application on a mobile device of a user communicates the settings to the car when the user rents and/or hails the car. In one example, the mobile device may carry preference settings that can be downloaded to a ride-sharing vehicle or a rented vehicle to adjust controls relevant to the role of the driver.

Abstract: A reference voltage generator is disclosed that may provide a plurality of reference voltages. A reference voltage generator may include a voltage divider, a multiplexer coupled to the voltage divider, an operational amplifier that may receive a voltage from the multiplexer, and a plurality of resistors that may receive an output from the operational amplifier. The reference voltages may be provided from output terminals coupled to the resistors. A reference voltage generator may include a voltage divider, two multiplexers coupled to the voltage divider, an operational amplifier coupled to each multiplexer, and a plurality of resistors coupled between the outputs of the two operational amplifiers. Reference voltages may be provided from output terminals coupled to the resistors.