Abstract: The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.

Abstract: An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbO2 is not less than 14 parts by mass and not more than 30 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, a content of phosphorus in terms of PO2.5 is not less than 1 part by mass and not more than 25 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, and a balance other than antinomy oxide and phosphorus oxide is tin oxide.

Abstract: One aspect of an indium tin oxide powder has a specific surface area of 55 m2/g or more, wherein a color tone is from bright yellow to a color of persimmons or a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart. Another aspect of the indium tin oxide powder has a modified surface, wherein a specific surface area is 40 m2/g or more, a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart, and a color tone is navy blue (L is 30 or less in a Lab colorimetric system). A method for producing the indium tin oxide powder includes: coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions in which pH is 4.0 to 9.3, and a temperature of a liquid is 5° C. or higher; and drying and calcining the indium tin hydroxide.

Abstract: An infrared ray cut-off material is formed of phosphorus-doped antimony tin oxide powder, in which a content of antimony in terms of SbO2 is not less than 14 parts by mass and not more than 30 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, a content of phosphorus in terms of PO2.5 is not less than 1 part by mass and not more than 25 parts by mass with respect to 100 parts by mass of the infrared ray cut-off material, and a balance other than antinomy oxide and phosphorus oxide is tin oxide.

Abstract: With this method for manufacturing fluorine-containing imide compounds, a method for manufacturing a fluorine-containing imide compound ((Rf1SO2)(Rf2SO2)NH) is selected which includes reaction of a fluorine-containing sulfonic acid (Rf1SO3H) and a fluorine-containing sulfonamide (Rf2SO2NH) in the presence of thionyl chloride. Wherein, Rf1 and Rf2 are fluorine, or straight-chain or branched perfluoroalkyl groups with a carbon number of 1-4.

Abstract: With respect to the metal colloid of the present invention, metal colloidal particles capable of forming a metal colloid by dispersing in either or both of an aqueous dispersion medium and a nonaqueous dispersion medium in a predetermined proportion while mixing, comprise metal particles and a protective agent coordination-modified on the surface of the particles, the protective agent having a carbon skeleton containing either or both of sulfur and oxygen in the molecule, and having a structure of being coordination-modified on the surface of the metal particles using an atom or an atomic group of either or both of sulfur and oxygen as an anchor, wherein the protective agent has one, or two or more functional groups selected from the group consisting of alkoxysilyl group, silanol group and hydroxyalkyl group in a molecular structure.

Abstract: According to the method for producing bis(fluorosulfonyl)imide salt of the present invention, the method for producing fluorosulfate, and the method for producing bis(fluorosulfonyl)imide onium salt, first, an aqueous solution is prepared by dissolving a mixed liquid containing bis(fluorosulfonyl)imide and fluorosulfonic acid in water. Then, the aqueous solution is neutralized with an alkaline compound, producing bis(fluorosulfonyl)imide salt and fluorosulfate. In the methods, bis(fluorosulfonyl)imide salt, fluorosulfate, and bis(fluorosulfonyl)imide onium salt can be obtained safely and easily.

Abstract: According to the method for producing bis(fluorosulfonyl)imide salt of the present invention, the method for producing fluorosulfate, and the method for producing bis(fluorosulfonyl)imide onium salt, first, an aqueous solution is prepared by dissolving a mixed liquid containing bis(fluorosulfonyl)imide and fluorosulfonic acid in water. Then, the aqueous solution is neutralized with an alkaline compound, producing bis(fluorosulfonyl)imide salt and fluorosulfate. In the methods, bis(fluorosulfonyl)imide salt, fluorosulfate, and bis(fluorosulfonyl)imide onium salt can be obtained safely and easily.

Abstract: Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 ?m. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material.

Abstract: This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D90 value of 60 nm or less in a particle size distribution. This method for producing an indium tin oxide powder includes, in series: a step (A) of coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions where a pH is in a range of 4.0 to 9.3 and a liquid temperature is in a range of 5° C. or higher, wherein the indium tin hydroxide has a color tone ranging from bright yellow to color of persimmon in a dried powder state; a step (B) of drying and calcining the indium tin hydroxide, and thereby, obtaining indium tin oxide; and a step (C) of dry pulverizing the obtained indium tin oxide in a nitrogen atmosphere.

Abstract: In this process for producing a fluorine-containing sulfonylimide compound, a process for producing a fluorine-containing sulfonylimide compound ((Rf1SO2)(Rf2SO2)2N.M) is employed that comprises a first step of obtaining a reaction liquid by reacting a perfluoroalkylsulfonyl fluoride (Rf1SO2F) with ammonia, a second step of obtaining a mixture containing an alkaline metal salt of a perfluoroalkylsulfonamide (Rf'SO2NH.M) by reacting the reaction liquid with at least one type of alkaline metal compound selected from among hydroxides, carbonates and bicarbonates of alkaline metals M of either Li, Na or K, and a third step of reacting the mixture with a perfluoroalkylsulfonyl halide (Rf2SO2X), wherein Rf1 and Rf2 represent linear or branched perfluoroalkyl groups having 1 to 4 carbon atoms, and X represents fluorine or chlorine.

Abstract: One aspect of an indium tin oxide powder has a specific surface area of 55 m2/g or more, wherein a color tone is from bright yellow to a color of persimmons or a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart. Another aspect of the indium tin oxide powder has a modified surface, wherein a specific surface area is 40 m2/g or more, a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart, and a color tone is navy blue (L is 30 or less in a Lab colorimetric system). A method for producing the indium tin oxide powder includes: coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions in which pH is 4.0 to 9.3, and a temperature of a liquid is 5° C. or higher; and drying and calcining the indium tin hydroxide.

Abstract: A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot.

Abstract: According to the method for producing fluorine-containing N-alkylsulfonylimide compound, the fluorine-containing N-alkylsulfonylimide compound can be produced safely with a high recovery rate by alkylating fluorine-containing sulfonylimide acid or fluorine-containing sulfonylimide acid salt with dialkylsulfuric acid or dialkylcarbonic acid.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm?X<30 mm) in hight, a second region from X to Y (30 mm?Y<100 mm), and a third region of the Y or higher, with the bottom of the crucible as a datum, a solidification rate V1 in the first region is in a range of 10 mm/h?V1?20 mm/h, and a solidification rate V2 in the second region is in a range of 1 mm/h?V2?5 mm/h.

Abstract: Provided are a layered crucible for casting a silicon ingot that can suppress dissolution of oxygen into the silicon ingot and a method of producing the same crucible. The layered crucible for casting a silicon ingot is used in the production of a silicon ingot by melting and casting a silicon raw material. The layered crucible comprising: a silica layer provided on the inner side of a mold; and a barium coating layer provided on the surface of the silica layer.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm?X<30 mm), a second zone from X to Y in height (30 min?Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h?V1?20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h?V2?5 mm/h.

Abstract: This process for producing fluorine-containing compounds includes liquid-phase fluorination by introducing a raw material compound and fluorine gas into a solvent to replace hydrogen atoms in the raw material compound with fluorine atoms. More specifically, the process for producing fluorine-containing compounds includes (1) promoting fluorination by dissolving the raw material compound in anhydrous hydrofluoric acid and introducing into a liquid-phase fluorination solvent, or (2) promoting fluorination by dissolving the raw material compound in a perfluoro compound having a plurality of polar groups in a molecule thereof and introducing into a liquid-phase fluorination solvent. According to these processes, a fluorination reaction can be carried out at high yield and without containing hardly any isomers while using a hydrocarbon compound as is for the raw material.

Abstract: According to the method for producing bis(fluorosulfonyl)imide of the present invention, first, an unreacted mixed liquid is prepared by mixing a first fluorosulfonic acid with urea in a condition free of a chemical reaction between the first fluorosulfonic acid and urea. Then, the unreacted mixed liquid is dripped into a heated second fluorosulfonic acid or a heated bis(fluorosulfonyl)imide, allowing a chemical reaction between fluorosulfonic acid and urea to proceed. In this method, generation of carbon dioxide gas and heat during the chemical reaction can be controlled.

Abstract: A process for producing a perfluorobutanesulfonic acid salt (PFBS salt) is provided. By the process, the yield is improved and PFOS salt content is reduced. Electrochemical fluorination is conducted in a reaction solution comprising anhydrous hydrogen fluoride to generate perfluorobutanesulfonyl fluoride, and the fluoride is hydrolyzed to produce a perfluorobutanesulfonic acid salt. The process for producing a perfluorobutanesulfonic acid salt includes: a step in which liquid phase components generated in the electrochemical fluorination cell are withdrawn and a first a perfluorobutanesulfonic acid salt fraction is prepared therefrom; and a step in which gaseous phase components discharged from the electrochemical fluorination cell are collected and a second perfluorobutanesulfonic acid salt fraction is prepared therefrom.