Abstract: Disclosed are a heat-ray shielding composition including an indium tin oxide powder which has a BET specific surface area of 40 m2/g or more and a navy blue or cobalt blue (L=30 or less, a<0, b<0 in the Lab colorimetric system) tone, and preferably a heat-ray shielding composition, wherein the indium tin oxide powder contained in the composition is an indium tin oxide powder which is surface-modified by firing indium tin hydroxide having bright yellow to persimmon (reddish brown or orange-red) tone, or an indium tin oxide powder which is surface-modified by firing indium tin oxide having bright yellow to persimmon (reddish brown or orange-red) tone; and a method for producing the same.

Abstract: This conductive coating film-forming agent contains a coating film-forming component having a polyol structure, and at least one kind of a compound selected from bis(fluorosulfonyl)imide salts represented by (FSO2)2N.X, which is easy to handle while maintaining solubility in the coating film-forming component, and exerts no influence on the environment and also has excellent conductivity even in the use-environment at high temperature.

Abstract: In this method, RH2ORH1SO2F is added to hydrofluoric acid so as to form a thick solution (hydrogen bonded complex), and the solution is directly supplied to a liquid phase reaction system in which an F2 gas is used. Alternatively, RH2ORH1SO2Cl is added to hydrofluoric acid so as to be converted into RH1ORH2SO2F by discharging HCl, and the RH1ORH2SO2F is directly supplied to a liquid phase reaction system in which an F2 gas is used. Consequently, fluorination can be carried out safely and a compound having an objective structure can be produced at low cost without causing isomerization or the like.

Abstract: According to the method for producing bis(fluorosulfonyl)imide of the present invention, first, an unreacted mixed liquid is prepared by mixing a first fluorosulfonic acid with urea in a condition free of a chemical reaction between the first fluorosulfonic acid and urea. Then, the unreacted mixed liquid is dripped into a heated second fluorosulfonic acid or a heated bis(fluorosulfonyl)imide, allowing a chemical reaction between fluorosulfonic acid and urea to proceed. In this method, generation of carbon dioxide gas and heat during the chemical reaction can be controlled.

Abstract: In this method for producing a perfluoroalkylsulfonic acid salt, there is provided a method for producing a perfluoroalkylsulfonic acid salt with a low fluorine content, which is a simple method to achieve a high yield, wherein a solution is formed by adding, to at least one compound selected from perfluoroalkylsulfonic acid salts represented by a general formula RfSO3.M (wherein Rf represents a perfluoroalkyl group of 1 to 4 carbon atoms, and M represents Li, Na or K), an organic solvent which is capable of dissolving the compound, and an adsorbent having a capacity to adsorb fluorine ions is added to the solution.

Abstract: This method for producing a potassium perfluoroalkanesulfonate includes an electrochemical fluorination step in which an alkanesulfonyl halide compound is subjected to electrochemical fluorination in anhydrous hydrogen fluoride, thereby to generate a production gas containing perfluoroalkanesulfonyl fluoride as the main component. In addition, for example, the methods may include a gas absorption step in which the production gas is reacted with an aqueous solution of potassium hydroxide, thereby to generate a gas absorbed solution containing potassium perfluoroalkanesulfonate, a purification step in which impurities such as potassium fluoride, potassium hydroxide, and potassium sulfate, are removed, and a concentration and collection step in which the aqueous solution from which the impurities are removed is concentrated and dried.

Abstract: The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.

Abstract: This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less.

Abstract: This process for producing fluorine-containing compounds includes liquid-phase fluorination by introducing a raw material compound and fluorine gas into a solvent to replace hydrogen atoms in the raw material compound with fluorine atoms. More specifically, the process for producing fluorine-containing compounds includes (1) promoting fluorination by dissolving the raw material compound in anhydrous hydrofluoric acid and introducing into a liquid-phase fluorination solvent, or (2) promoting fluorination by dissolving the raw material compound in a perfluoro compound having a plurality of polar groups in a molecule thereof and introducing into a liquid-phase fluorination solvent. According to these processes, a fluorination reaction can be carried out at high yield and without containing hardly any isomers while using a hydrocarbon compound as is for the raw material.

Abstract: A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface.