Abstract: The present invention relates to a film condenser and a metalized film for manufacturing the same. The metalized film comprises a base film formed from an insulating material, and a metal coating layer formed on the base film. A plurality of uncoated portions are formed as area partition margins in the metal coating layer so as to respectively form, in the metal coating layer, a plurality of electrode regions, a plurality of fuse connecting regions surrounded by two or more of the electrode regions, and a plurality of fuse portions. The fuse portions electrically connect each one of the fuse connecting regions with the electrode regions surrounding the one of the fuse connecting regions.

Abstract: A high-strength Cu based alloy, consists of:Ni: 0.5 to 2.0%;Sn: 1.2 to 2.5%;Si: 0.04 to 0.1%;Zn: 0.1 to 1%;Mg: 0.0001 to 0.02%;Mn: 0.0001 to 0.1%;P: 0.0001 to 0.02%; andCu and inevitable impurities: the balance,wherein the total content of Mg, Mn and P is 0.001 to 0.12%. The Cu based alloy is suitable for use as a material of electrical and electronic parts, and free from smutting during pretreatment for plating thereof.

Abstract: The present invention has the object of increasing the heat exchanging performance of heat transfer tubes having grooved inner surfaces. In order to achieve this object, the heat transfer tubes having grooved inner surfaces according to the present invention have fins which are formed consecutively in a circumferential direction on the inner surface of a metallic tube. The inner surface of the metallic tube is divided into regions R1.about.R4 in the circumferential direction. The inclination angle .alpha. with respect to the axis of the heat transfer tube of the fins 2 in odd-numbered regions when counting from one of the regions is 10.about.25.degree., and the inclination angle .beta. with respect to the axis of the heat transfer tube of the fins 2 in even-numbered regions when counting from the region is -10.about.-25.degree.. The pitch of the fins 2 is 0.3.about.0.4 mm, the height of the fins from the inner circumferential surface of the metallic tube is 0.15.about.0.

Abstract: A copper based alloy consists essentially, by weight %, of 15 to 35% Zn, 7 to 14% Ni, 0.1 to 2% or less Mn, 0.01 to 0.5% Fe, 0.0005 to 0.1% P, at least one or two elements selected from the group consisting of 0.001 to 0.9% Si, 0.0003 to 0.02% Pb, and 0.0003 to 0.01% C, the total content of the selected at least two elements being limited to a range of 0.0006 to 0.9%, and the balance of Cu and inevitable impurities. The copper based alloy has excellent blankability as well as good corrosion resistance and high strength.

Abstract: The present invention has the object of increasing the heat exchanging performance of heat transfer tubes having grooved inner surfaces. In order to achieve this object, the heat transfer tubes having grooved inner surfaces according to the present invention have fins which are formed consecutively in a circumferential direction on the inner surface of a metallic tube. The inner surface of the metallic tube is divided into regions R1.about.R4 in the circumferential direction. The inclination angle .alpha. with respect to the axis of the heat transfer tube of the fins 2 in odd-numbered regions when counting from one of the regions is 10.degree..about.25.degree., and the inclination angle .beta. with respect to the axis of the heat transfer tube of the fins 2 in even-numbered regions when counting from the region is -10.degree..about.-25.degree.. The pitch of the fins 2 is 0.3.about.0.4 mm, the height of the fins from the inner circumferential surface of the metallic tube is 0.15.about.0.

Abstract: There is provided a copper alloy sheet for forming a connector, having a chemical composition consisting essentially of:Mg: 0.3-2% by weight;P: 0.001-0.02% by weight;C: 0.0002-0.0013% by weight;O: 0.0002-0.001% by weight; andCu and inevitable impurities: the balance. The copper alloy sheet has a structure that fine particles of oxides including Mg oxide having a particle size of not more than 3 .mu.m are evenly dispersed in a matrix of the copper alloy sheet. The copper alloy sheet is excellent not only in tensile strength, elongation, electric conductivity and spring limit value before forming, but also in spring limit value after forming, and high-temperature creep strength.

Abstract: A lead frame material comprises a base plate consisting of copper or copper alloys, and a protective coating formed on the upper or the both surface of the base plate. The protective coating is composed of at least one metal selected from the group consisting of gold, gold alloy, silver, silver alloy, palladium and palladium alloy, and has a thickness of 10-500 angstrom. The protective coating is formed by means of vapor deposition. It is possible to form an intermediate coating of nickel or nickel alloys between the surface of the base plate and the protective coating, by means of vapor deposition or wet plating. The suitable thickness of the intermediate coating is within the range of 50-20000 angstrom.

Abstract: There is provided a lead frame material formed of a Cu alloy for a resin sealed type semiconductor device, wherein the Cu alloy consists essentially of 2 to 4% Ni, more than 0.5 to 1%, Si, 0.1 to 2% Zn, more than 0.01 to 0.05%, Mg, 0.05 to 1% Sn, and the balance of Cu and inevitable impurities, the inevitable impurities containing 20 ppm or less sulfur (S) and 20 ppm or less carbon (C). The lead frame material formed of the Cu alloy has improved adhesion strength to an epoxy resin as a sealing material. A semiconductor device prepared from said lead frame material is also provided.

Abstract: The heat transfer tube of the present invention is provided in an inner surface thereof with a plurality of main grooves and a plurality of narrow grooves. The main grooves have rectangular shaped cross sections, parallel to one another, and extend at an angle to the longitudinal direction of the heat transfer tube. The narrow grooves are formed parallel to one another, extend independently of the main grooves. Each of the narrow grooves has a bottom face and a pair of side faces, the side faces are inclined closely toward the bottom face, and each of the side faces and a part of the bottom face form sharp cuts.

Abstract: A heat transfer tube having an inner surface in which are formed primary grooves and secondary grooves. The primary grooves parallel to one another, extending at an angle to the longitudinal direction of the heat transfer tube and secondary grooves parallel to one another, extending an angle to the primary grooves. At the intersections of the primary and secondary grooves is formed a series of pear-shaped grooves whose inner opening dimension is smaller than the dimension of the bottom of the pear-shaped groove.

Abstract: A copper alloy consists essentially by weight percent of 0.5 to 3% Ni, 0.5 to 2.5% Sn, 0.05 to 0.9% Si, 0.1 to 2% Zn, 0.025 to 0.25% Fe, and the balance of Cu and inevitable impurities. The inevitable impurities include C in an amount of not more than 10 ppm. The obtained copper alloy possesses improved hot rollability and exhibits excellent adhesion strength of a plated surface thereof when heated, while having satisfactory strength and platability.

Abstract: A copper-based alloy connector excellent in electrical conductivity, adherence of solder of the connector when bent, high-temperature creep strength, and migration resistance, consists essentially by weight percent of 0.5 to 3% Ni, 0.1 to 0.9% Sn, 0.08 to 0.8% Si, 0.1 to 3% Zn, 0.007 to 0.25% Fe, 0.001 to 0.2% P, and the balance of Cu and inevitable impurities. The copper-based alloy connector can withstand use for a long term in a high-temperature and high-humidity environment.

Abstract: A copper alloy material for lead frames for semiconductor devices. The lead frame material consists essentially of:Ni: 0.5-2 percent by weight;Sn: 1.2-2.5 percent by weight;Si: 0.05-0.5 percent by weight;Zn: 0.1-1 percent by weight;Ca: 0.001-0.01 percent by weight;Mg: 0.001-0.05 percent by weight;Pb: 0.001-0.01 percent by weight; andCu and inevitable impurities: the balance.The lead frame material obtained possesses not only high strength, but also excellent thermal-exfoliation resistance of the solder, and also enhances the wear resistance of the stamping dies, while possessing excellent other properties, such as repeated-bending strength, thermal conductivity and electrical conductivity, platability, and solderability, which are required of lead frames.

Abstract: A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg.sub.3 P.sub.2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.

Abstract: A copper alloy lead material for leads of a semiconductor device, which consists essentially of from 2 to 2.4 percent by weight iron, from 0.001 to 0.1 percent by weight phosphorus, from 0.01 to 1 percent by weight zinc, from 0.001 to 0.1 percent by weight magnesium, and the balance of copper and inevitable impurities. The copper alloy lead material possesses satisfactory properties such as elongation and electrical conductivity required of a material for leads in a semiconductor device, and further exhibits excellent strength and heat resistance enough to be used as leads in semiconductor devices having high wiring densities, and at the same time possesses improved soldering reliability to the substrate of the semiconductor device as compared to a conventional copper alloy lead material.