Patents Assigned to Monolith Semiconductor, Inc.
  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 11315845
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: April 26, 2022
    Assignee: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, John Nowak, Kiran Chatty, Sujit Banerjee
  • Stucture and method for SIC based protection device
    Patent number: 10910501
    Abstract: A device may include a P-N diode, formed within a SiC substrate. The device may include an N-type region formed within the SiC substrate, a P-type region, formed in an upper portion of the N-type region; and an implanted N-type layer, the implanted N-type layer being disposed between the P-type region and the N-type region.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: February 2, 2021
    Assignee: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Blake Powell, Sujit Banerjee
  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 10804175
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: October 13, 2020
    Assignee: MONOLITH SEMICONDUCTOR, INC.
    Inventors: Kevin Matocha, John Nowak, Kiran Chatty, Sujit Banerjee
  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 9035395
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: May 19, 2015
    Assignee: MONOLITH SEMICONDUCTOR, INC.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • Semiconductor devices comprising getter layers and methods of making and using the same
    Patent number: 8994118
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: March 31, 2015
    Assignee: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • SEMICONDUCTOR DEVICES COMPRISING GETTER LAYERS AND METHODS OF MAKING AND USING THE SAME
    Publication number: 20140299890
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Application
    Filed: May 1, 2014
    Publication date: October 9, 2014
    Applicant: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
  • SEMICONDUCTOR DEVICES COMPRISING GETTER LAYERS AND METHODS OF MAKING AND USING THE SAME
    Publication number: 20140299887
    Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
    Type: Application
    Filed: April 4, 2014
    Publication date: October 9, 2014
    Applicant: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty