Abstract: A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.
Type:
Grant
Filed:
August 11, 2014
Date of Patent:
December 15, 2015
Assignee:
MONOLITH SEMICONDUCTOR INC.
Inventors:
Sujit Banerjee, Kevin Matocha, Kiran Chatty
Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
Type:
Grant
Filed:
April 4, 2014
Date of Patent:
May 19, 2015
Assignee:
MONOLITH SEMICONDUCTOR, INC.
Inventors:
Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
Type:
Grant
Filed:
May 1, 2014
Date of Patent:
March 31, 2015
Assignee:
Monolith Semiconductor, Inc.
Inventors:
Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
Type:
Application
Filed:
May 1, 2014
Publication date:
October 9, 2014
Applicant:
Monolith Semiconductor, Inc.
Inventors:
Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty
Abstract: Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.
Type:
Application
Filed:
April 4, 2014
Publication date:
October 9, 2014
Applicant:
Monolith Semiconductor, Inc.
Inventors:
Kevin Matocha, Kiran Chatty, Larry Rowland, Kalidas Chatty