Abstract: The present invention provides a pulse dimming circuit and a method thereof. The pulse dimming circuit is compatible for both DC input signal and PWM input signal using only one circuit board, and includes a first input port, a second input port, a comparison signal generator, a comparator, a logic module, and a switch network electrically coupled to the second input port, an output terminal of the comparator, and an output terminal of the logic module.
Abstract: A regulator with a high side pass device and a low side pass device coupled in series to the high side pass device is disclosed. The apparatus further includes a control module coupled to the high side pass device and the low side pass device. The control module is coupled to the high side pass device and the low side pass device to control the high side pass device and the low side pass device. The control module is operable to lock out the high side pass device under certain conditions.
Abstract: Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.
Abstract: Circuit configurations for a high power switch-mode voltage regulator circuit is disclosed that include an array of Metal Oxide Semiconductor (MOS) switching transistors electrically coupled to one another at their drains and sources and a plurality of gate driver circuits. Each gate driver circuit is coupled to a gate and dedicated to driving only one MOS switching transistor.
Abstract: The present invention discloses a smart driver used in flyback converters adopting a transconductance amplifier to turn on a synchronous rectifier FET, and a comparator to quickly turn off the synchronous rectifier FET.
Abstract: An input surge suppression device and method that uses a simple JFET structure. The JFET has its gate clamped to a predetermined value, its the drain receives the input voltage from an input power source, its source is connected to the input of a down-stream device, and a resistor connected between the drain and the gate or between the source and the gate. Thus, when the drain voltage approximates the clamped gate voltage, the source voltage nearly equals the drain voltage. When the drain voltage rises above the clamped gate voltage, the source voltage is lower than the drain voltage. The downstream device may be a DC-DC converter and the gate is biased by the enable (EN) pin of a DC-DC converter.
Abstract: An error amplifier expected to exhibit rail-to-rail operation, high bandwidth, and high slew rate, is described, the error amplifier comprising a first stage to receive an input differential voltage and to provide transconductance gain, an intermediate stage to provide current gain, and an output stage to drive a load.
Abstract: A CCFL inverter circuit integrates a feedback circuit and protection circuit together. For both in-phase and out-of-phase applications, sensed lamp voltages can be used for open lamp and short lamp detection and sensed currents can be used for open lamp detection. The driving circuit adjusts the open lamp frequency by using a duty cycle control signal so that the driving circuit can always achieve the desired lamp voltage gain.
Type:
Grant
Filed:
July 1, 2008
Date of Patent:
November 22, 2011
Assignee:
Monolithic Power Systems, Inc.
Inventors:
Junming Zhang, Yuancheng Ren, Kaiwei Yao, Eric Yang
Abstract: A sandwich structure and method thereof is disclosed for double-sided cooling, EMI noise shielding and current carrying in mini-modules. The proposed structure comprises a top structure and a bottom structure to achieve double-sided cooling. Meanwhile, the top structure is configured to shield EMI noises as well. The proposed structure further comprises a first set of connecting structures for connecting devices of the mini-modules with the top structure and a second set of connecting structure for connecting the top structure with the bottom structure. The connecting structures are capable of carrying current.
Abstract: A technique for voltage regulation involves switching between light load mode and PWM mode based on load conditions. Advantageously, this improves efficiency at light load. In an embodiment, error amplifier output is used to determine whether load is light. When light load is detected, extend PWM off time until the output voltage reaches a load threshold.
Abstract: A ramp-up circuit for switched capacitor circuits with negative feedback to control the slew rate of in-rush current. Other embodiments are described and claimed.
Abstract: A battery charger integrated circuit with temperature control is disclosed that includes a temperature sensor circuit and a charging current generator circuit. Upon receiving a temperature reading voltage (VDT), the temperature sensing circuit is operable to generate a second reference voltage (VREF) that is a function of the first reference voltage (VREF1). The charging current generator circuit generates and continuously adjusts a reference current (I1) and a charging current (IOUT) according to the second reference voltage (VREF). Whenever the temperature reading voltage (VDT) exceeds the first reference voltage, the temperature sensor circuit is operable to adjust the second reference voltage (VREF).
Abstract: A voltage converter includes an input circuit that is designed to receive an input voltage. The voltage converter includes a switch circuit comprising a pair of switches that receive the input voltage through the input circuit. The voltage converter includes an output circuit configured to supply current at a regulated voltage. The voltage converter includes a feedback circuit that generates a feedback signal. The voltage converter includes a switch control circuit that generates a switch control signal during an operational mode of circuit operation. The voltage converter includes an idle mode control circuit that generates an idle mode control signal during the operational mode and causes the switch circuit to turn off one of the switches for a period of time. The voltage converter includes a switch turn-off circuit that generates a second control signal, which causes the switch circuit to turn off the other switch.
Abstract: A circuit is provided including an output stage with a pair of transistors. Further provided is a control circuit in communication with the output stage. The control circuit is capable of controlling a duration in which at least one of the transistors is actuated for reducing an in-rush current.
Abstract: The present invention discloses a Class-D power amplifier and control method thereof. In one embodiment, the amplifier feeds back the signal at the output node to the inverting input of the comparator, and provides a high frequency triangular wave signal to the non-inverting input of the comparator. In addition, the non-inverting input of the comparator may be coupled to an offset voltage, while the inverting input of the comparator may be coupled to a fixed-frequency rectangular wave signal, a feedback signal which is derived from the output stage and an input signal. In use, the switching frequency may be at least substantially fixed, so as to reduce the influence on the system caused by electromagnetic interruption (EMI). Further, the control circuit is simple, and some devices can be integrated.
Type:
Grant
Filed:
April 23, 2010
Date of Patent:
August 23, 2011
Assignee:
Monolithic Power Systems, Inc.
Inventors:
Junming Zhang, Yuancheng Ren, Yunping Lang
Abstract: A lead frame structure for supporting a semiconductor die is disclosed that includes at least two electrical leads each having a plurality of finger shaped structures unilaterally extending outward from the at least two electrical leads. The electrical leads are arranged so that the plurality of finger shaped structures forms inter-digital patterns where the semiconductor dies are bonded to the lead frame structure.
Abstract: An error amplifier expected to exhibit rail-to-rail operation, high bandwidth, and high slew rate, is described, the error amplifier comprising a first stage to receive an input differential voltage and to provide transconductance gain, an intermediate stage to provide current gain, and an output stage to drive a load.
Abstract: A trench-gate metal oxide semiconductor field-effect transistor includes a field plate that extends into a drift region of the transistor. The field plate is configured to deplete the drift region when the transistor is in the OFF-state. The field plate is formed in a field plate trench. The field plate trench may be formed using a self-aligned etch process. The conductive material of the field plate and gate of the transistor may be deposited in the same deposition process step. The conductive material may be etched thereafter to form the field plate and the gate in the same etch process step.
Type:
Grant
Filed:
October 20, 2010
Date of Patent:
July 12, 2011
Assignee:
Monolithic Power Systems, Inc.
Inventors:
Donald R. Disney, Tiesheng Li, Lei Zhang
Abstract: A trench-gate metal oxide semiconductor field-effect transistor (MOSFET) includes a field plate that extends into a drift region of the MOSFET. The field plate, which is electrically coupled to a source region, is configured to deplete the drift region when the MOSFET is in the OFF-state. The field plate extends from a top surface of a device substrate, which comprises an epitaxial layer formed on a silicon substrate. The field plate has a depth greater than 50% of a thickness of the epitaxial layer. For example, the field plate may extend to a full depth of the drift region. The field plate allows for relatively easy interconnection from the top surface of the device substrate, simplifying the fabrication process.
Abstract: The present invention discloses a Class-D power amplifier and control method thereof. In one embodiment, the amplifier feeds back the signal at the output node to the inverting input of the comparator, and provides a high frequency triangular wave signal to the non-inverting input of the comparator. In addition, the non-inverting input of the comparator may be coupled to an offset voltage, while the inverting input of the comparator may be coupled to a fixed-frequency rectangular wave signal, a feedback signal which is derived from the output stage and an input signal. In use, the switching frequency may be at least substantially fixed, so as to reduce the influence on the system caused by electromagnetic interruption (EMI). Further, the control circuit is simple, and some devices can be integrated.
Type:
Grant
Filed:
December 14, 2010
Date of Patent:
October 18, 2011
Assignee:
Monolithic Power Systems, Inc.
Inventors:
Junming Zhang, Yuancheng Ren, Yunping Lang