Abstract: On-chip peltier cooling devices and manufacturing methods thereof are provided. The device comprises: a first type well, a polysilicon gate and dummy gates, first type doped regions, a second type doped region, a first and second via. The dummy gate is formed as a two-segment structure with an interval, and there is no gate oxide layer between portions of the dummy gate which are far away from the interval and the semiconductor substrate. The first type doped region at least overlaps with an orthographic projection region of the first segment of the dummy gate on the semiconductor substrate. The second type doped region at least overlaps with orthographic projection regions of the polysilicon gate and the second segment of the dummy gate on the semiconductor substrate. In this application, the heat flows from inside of the device to its surface, to realize heat dissipation and cooling.

Abstract: Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

Abstract: Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

Abstract: The present disclosure provides an SST driving circuit, a chip, and a driving output method. The SST driving circuit includes: a signal driver for driving and outputting a signal to be driven, the signal driver including termination resistors; a first electrostatic current discharge module, providing first discharge paths for electrostatic currents generated in the signal driver; a second electrostatic current discharge module, connected in series with the termination resistors, providing second discharge paths for the electrostatic currents; and a power clamp, used for conducting the power clamp circuit, the first discharge paths and the second discharge paths when a power supply voltage of the signal driver exceeds a clamping voltage. The present disclosure provides different discharge paths, which effectively reduces voltage borne by a protected device through a voltage division method, and improves the device's ability to protect against electrostatic discharge.

Abstract: An apparatus controls access to a memory module coupled to a host controller via a data bus to exchange data with the host controller. The apparatus has a configurable information memory and comprises: an access control input port via which the apparatus receives a data access command from the host controller; a control unit to identify a data access command including an access address directed to a predetermined storage region of the memory module, and generate an information processing command based at least on the access address directed to the predetermined storage region, such that the control unit can configure the information memory based on the information processing command or provide the information processing command to the memory module; and an access control output port via which the apparatus provides the information processing command to the memory module, such that the memory module outputs corresponding data information to the host controller based on the information processing command.

Abstract: The present disclosure provides a power clamp circuit, a chip, and a dual-clamp method. The power clamp circuit is applied to a circuit system to monitor the power supply voltage of the circuit system and includes: an EOS protection module, for outputting an EOS protection triggering signal when it is determined that the circuit system is electrically overstressed based on the power supply voltage; an ESD protection module, for outputting an ESD protection triggering signal when it is determined that an electrostatic event is present in the circuit system based on the power supply voltage; a switch control module, for turning on a discharge path based on the EOS protection signal to discharge an EOS current, and turning on the discharge path based on the ESD protection signal to discharge an electrostatic current.

Abstract: The present application pertains to a processing device or a distributed processing system using the processing device.

Abstract: The present disclosure provides a package substrate structure and a method for manufacturing the same. The method includes: providing a substrate, forming a first hole with a first radial dimension in the substrate; forming a first metal layer on the sidewall of the first via to form a first via; filing the first via with a dielectric layer; forming a second hole with a second radial dimension in the dielectric layer, wherein the second radial dimension is smaller than the first radial dimension, and the second hole and the first metal layer are separated by the dielectric layer; filling the second hole with the second metal layer to form a second via. The high-speed circuit via design achieved by a sleeve via arrangement of the present disclosure can reduce the influence of the impedance mismatch caused by vias on insertion loss and the return loss in a specific frequency band.

Abstract: The present application discloses an apparatus for repairing a defect of a memory module, comprises: a central buffer having an address recording module for recording defective address information indicating one or more defective memory addresses in the memory module; the central buffer is configured to receive an access command for accessing a target address in the memory module from a memory interface, and to determine whether to generate a repair access command for repairing the target address according to a comparison result; and a data buffer having a data recording module for recording repair data; wherein the data buffer is coupled between the memory interface and the memory module to buffer data interacted therebetween, and is coupled to the central buffer to receive the access command or the repair access command; the data buffer is configured to write target data associated with the access command into the data recording module as repair data corresponding to a target address according to the repair

Abstract: The present disclosure provides a method and apparatus for parsing contiguous system addresses, and an electronic device. The method for parsing contiguous system addresses comprises: acquiring system level information upon receiving contiguous system addresses; acquiring logical address ranges of objects in a first level based on the contiguous system addresses and the system level information; and when successively acquiring logical address ranges of objects in a second level, . . . , or an Nth level of the system, acquiring logical address ranges of objects in a present level based on a logical address range of a previous level and the system level information, wherein N is the number of levels, and N is an integer greater than or equal to 2, and a logical address range of an object comprises a start address and an end address of the object.

Abstract: The application discloses a memory controller coupled between a memory module and a host controller to control accesses of the host controller to the memory module. The memory controller comprises a central buffer coupled between the memory module and the host controller via a command/address channel, wherein the central buffer is configured to receive a command/address signal from the host controller and provide the command/address signal to the memory module.

Abstract: The present application disclosed a conducting layer-dielectric layer-conducting layer (CDC) laminate structure and test method for detecting defects of an inter-metal dielectric layer. The laminate structure comprises: a dielectric layer formed on a substrate; a first conducting layer formed at a first side of the dielectric layer, wherein the first conducting layer includes a first metal region and at least one first opening in the first metal region; and a second conducting layer formed at a second side of the dielectric layer opposite to the first conducting layer such that the second conducting layer is separated from the first conducting layer by the dielectric layer, wherein the second conducting layer includes a second metal region and a plurality of second openings in the second metal region.

Abstract: An asymmetrical I/O structure is provided. In one embodiment, the asymmetrical I/O structure comprises a first power supply node connected to a first voltage, a second power supply node connected to a second voltage, a pull-up unit and a pull-down unit which are connected between the first power supply node and the second power supply node. The first voltage is higher than the second voltage. A node between the pull-up unit and the pull-down unit is connected to an I/O node. The pull-up unit comprises one or more pull-up transistors, and the pull-down unit comprises one or more pull-down transistors. The number of the pull-up transistors is different from the number of the pull-down transistors.

Abstract: The present application discloses an apparatus for testing defects of a memory module comprises a central buffer for generating a test write command and a test read command to indicate testing to a target address in a memory module; and a data buffer coupled to the central buffer to receive the test write command and the test read command; the data buffer is configured to, in response to the test write command, use target data as repair data corresponding to the target address, and write the target data into the memory module; and, in response to the test read command, to read target data from the target address and compare the target data with the repair data, and to send to the central buffer a comparison result of the target data and the repair data; the central buffer is further configured to record the target address as a tested address when generating the test write command, and determine whether to add the tested address to defective address information based on the comparison result associated with th

Abstract: A test device and method with built-in self-test logic and a communication device. The test device includes at least one generator and at least one checker which are disposed between a physical layer and a medium access control layer. The at least one generator is configured to generate a protocol pattern to form a data path between the physical layer and the medium access control layer, and generate different pseudo random bit sequence patterns in the data path. The at least one checker is configured to test a data stream in the physical layer and/or the medium access control layer according to the pseudo random bit sequence patterns, thereby locating a fault position.

Abstract: A memory controller and a method for accessing a memory module are provided. The memory controller is coupled between the memory module and a host controller to control the access of the host controller to the memory module. The memory controller comprises: a central buffer coupled to the host controller for receiving a data access command from the host controller, and coupled to the memory module for providing a modified data access command to the memory module; wherein the central buffer comprises an access command processing module, for processing the data access command to generate the modified data access command; and a data buffer coupled to the central buffer for receiving the modified data access command from the central buffer, and coupled between the host controller and the memory module for exchanging data between the host controller and the memory module under the control of the modified data access command.

Abstract: The application discloses a memory controller coupled to a memory module for controlling access to the memory module. The memory controller comprises: a registering clock driver coupled to the memory module for providing a data access command to the memory module so as to control access to the memory module; and a data buffer coupled between the registering clock driver and the memory module for exchanging data between the memory module and the registering clock driver under the control of the registering clock driver; wherein the registering clock driver comprises a computing unit for computing the data received via the data buffer from the memory module and providing a computing result to the memory module via the data buffer.

Abstract: The present application discloses a computing device and a neural network processor including the computing device. The computing device includes one or more columns of computing units arranged in an array, wherein at least one computing unit in each column comprises: an arithmetic parameter memory for storing one or more arithmetic parameters; an arithmetic logical unit (ALU) for receiving input data and performing computation on the input data using the one or more arithmetic parameters stored in the arithmetic parameter memory; and an address controller for providing an address control signal to the arithmetic parameter memory to control the storage and output of the one or more arithmetic parameters.

Abstract: A data conversion control apparatus, comprising: at least one first interface each for coupling a first external interface, both of the first interface and the first external interface being in accordance with a predetermined physical interface standard, wherein data transmitted between the first interface and the first external interface is in accordance with a configurable application layer protocol; at least one second interface each for coupling a second external interface, wherein the second external interface is a memory interface in accordance with a predetermined memory interface standard, and the second interface is configurable to match the predetermined memory interface standard; and a data rebuild unit coupled between the at least one first interface and the at least one second interface, wherein the data rebuild unit is configured to rebuild data such that data can be transmitted in respective formats between the at least one first interface and the at least one second interface.

Abstract: The present disclosure provides a phase locked loop-based power supply circuit and method, and a chip. The phase locked loop-based power supply circuit includes: a phase locked loop circuit, including a voltage-controlled oscillator (VCO), the phase locked loop circuit outputs, through an output end of the phase locked loop circuit, a control voltage for controlling the VCO; and a voltage regulator, an input end of the voltage regulator is connected with the output end of the phase locked loop circuit, to make the control voltage outputted by the phase locked loop circuit form a power supply voltage after passing through the voltage regulator; the power supply voltage is used for supplying power for a load circuit; the load circuit includes at least one logic gate. The phase locked loop-based power supply circuit reduces timing variations in a digital circuit, and is conducive to implementing timing closure.