Abstract: The application provides a calibration method, a calibration device and a multi-phase clock circuit. The method includes: gating each of multi-phase clock signals as a first primary clock signal and gating a corresponding clock signal as a first auxiliary clock signal according to a first preset rule; gating each of the multi-phase clock signals as a second primary clock signal and gating a corresponding clock signal as a second auxiliary clock signal according to a second preset rule; obtaining a time difference between each primary clock signal and its corresponding auxiliary clock signal under the first preset rule and the second preset rule; determining a delay adjustment amount of each primary clock signal according to the time difference, and obtaining a phase error between the multi-phase clock signals according to the delay adjustment amount; and obtaining a calibration amount of the multi-phase clock signals according to the phase error.

Abstract: An AI computing platform, an AI computing method, and an AI cloud computing system, the platform including: at least one computing component, each computing component includes: a processor, configured to initiate a calculation task and decompose the calculation task into a plurality of ordered subtasks according to a network topology information table stored therein; a plurality of near-memory computing modules, the plurality of near-memory computing modules connecting in pairs with the processor, and the plurality of near-memory computing modules connecting in pairs with each other, wherein the plurality of near-memory computing modules are each configured to implement different operation types, and the plurality of near-memory computing modules complete one or more of the plurality of subtasks according to the operation types they each implement.

Abstract: A method for splitting operators, a device for splitting operators and a non-transitory computer readable storage medium are provided. The method includes: S1: obtaining buffer information required by target operators; and S2: splitting the target operators to obtain a splitting result of the target operators, and obtaining a storage layout of the target operators in the first memory, based on the buffer information required by the target operators and a storage capacity of the first memory; the splitting result of the target operators and the storage layout of the target operators are used to implement a mapping of a target artificial intelligence model to an artificial intelligence hardware accelerator.

Abstract: A memory device includes a printed circuit board having a plurality of conductive layers; memory chips mounted over the printed circuit board, wherein the memory chips comprise at least a first number of memory chips and a second number of memory chips; a first power module mounted over the printed circuit board and for providing a first set of power supplies to the first number of memory chips through the plurality of conductive layers; and a second power module mounted over the printed circuit board and for providing a second set of power supplies to the second number of memory chips through the plurality of conductive layers.

Abstract: The application discloses a data encryption and decryption system and method. The system includes a host system, a sequencer, a hardware processor, multiple direct memory access modules, and multiple cryptography engines, the cryptography engine comprises an input buffer, an output buffer, a symmetric encryption/decryption algorithm module and a digest algorithm module. The host system determines encryption/decryption calculation method and/or digest calculation method, and generates corresponding encryption/decryption calculation commands and/or digest calculation commands. The sequencer analyzes the encryption/decryption calculation commands and/or digest calculation command to generate control flow commands, and controls one or more of the multiple direct memory access modules via the control flow commands to input data to be encrypted/decrypted into the input buffer of one or more cryptography engines.

Abstract: The present application discloses a detection structure for chip edge cracks and a detection method thereof. In one embodiment, the detection structure comprises a test ring located between a chip scribe line and a sealing ring, wherein the chip internally comprises two test pads for detecting continuity of the test ring, the sealing ring comprises a P-type doped ring located in a substrate and a shallow trench isolation area for isolating the sealing ring the test ring, the shallow trench isolation area is formed with N-type doped regions electrically connected to the two test pads respectively; the test ring comprises a multi-layer interconnection structure located on the substrate and the interconnection structure is electrically connected to the two test pads through the N-type doped regions. The present application can detect edge cracks caused by wafer manufacturing, die sawing, and chip packaging processes to reduce reliability risk.

Abstract: A data processing method and an acceleration unit are provided. The method includes: S11, reading a row of a target matrix as a target row; S12, shifting elements in the target row along a first direction to acquire a shifted target row according to a preset offset, and writing each element in the shifted target row into a corresponding row buffer respectively; S13, reading a next row of the target row from the target matrix as a new target row, if the next row of the target row is not the last row of the target matrix and an available storage space exists in the row buffers; S14, reading corresponding elements from each row buffer according to a preset rule, and writing the elements read from each row buffer into an output buffer as a row, step S14 is repeated until all elements in all row buffers are written into the output buffer.

Abstract: An electrostatic discharge and electrical overstress detection circuit includes protection circuit, sensing circuit, clamp circuit, several stages of sampling logic circuits connected in sequence and storage circuit. Protection circuit is coupled between input/output pin and internal chip and discharges to a power supply terminal when the electrostatic discharge or electrical overstress events happen. Sensing circuit and clamp circuit are coupled between power supply terminal and ground terminal. Each stage of sampling logic circuit is coupled to power supply terminal and memory cell of storage circuit, and the first stage of sampling logic is coupled to the clamp circuit, and when the electrostatic discharge or electrical overstress events happen, the several stages of sampling logic circuits sample voltage of the power supply terminal one by one and change state of corresponding memory cell, so that the electrostatic discharge or electrical overstress events are successively recorded by the memory cell.

Abstract: A computing system includes a host computing device and a slave computing device. The host computing device comprises a host processor, a host device memory and a host address mapping management. The host address mapping management manages a system memory page table, and converts, in response to a data access request from a processing process run on the host processor, requested virtual addresses into host device physical addresses based on the system memory page table to allow the processing process to access corresponding host storage units. The slave computing device includes a slave processor callable by the host processor to assist the host processor in running the processing processes, a slave device memory and a slave address mapping management unit.

Abstract: The application provides a calibration method, a calibration device and a multi-phase clock circuit. The method includes: gating each of multi-phase clock signals as a first primary clock signal and gating a corresponding clock signal as a first auxiliary clock signal according to a first preset rule; gating each of the multi-phase clock signals as a second primary clock signal and gating a corresponding clock signal as a second auxiliary clock signal according to a second preset rule; obtaining a time difference between each primary clock signal and its corresponding auxiliary clock signal under the first preset rule and the second preset rule; determining a delay adjustment amount of each primary clock signal according to the time difference, and obtaining a phase error between the multi-phase clock signals according to the delay adjustment amount; and obtaining a calibration amount of the multi-phase clock signals according to the phase error.

Abstract: A topology of accelerators is provided, including a plurality of accelerators and a broadcast buffer. Each of the plurality of accelerators corresponds to a first memory and obtain input data from an external second memory respectively, wherein the accelerator can only directly access its corresponding first memory, and the broadcast buffer is coupled between one of the plurality of accelerators and the corresponding first memory. When receiving a write command and the input data from the accelerator to which it is coupled, the broadcast buffer is configured to write the input data into the corresponding first memory according to the write command, and when broadcast is enabled, the broadcast buffer is configured to broadcast the write command and the weight data in the input data. This application can improve the access performance of the accelerators and reduce the access delay.

Abstract: The present disclosure provides a power clamp circuit, a chip, and a dual-clamp method. The power clamp circuit is applied to a circuit system to monitor the power supply voltage of the circuit system and includes: an EOS protection module, for outputting an EOS protection triggering signal when it is determined that the circuit system is electrically overstressed based on the power supply voltage; an ESD protection module, for outputting an ESD protection triggering signal when it is determined that an electrostatic event is present in the circuit system based on the power supply voltage; a switch control module, for turning on a discharge path based on the EOS protection signal to discharge an EOS current, and turning on the discharge path based on the ESD protection signal to discharge an electrostatic current.

Abstract: The present disclosure provides an SST driving circuit, a chip, and a driving output method. The SST driving circuit includes: a signal driver for driving and outputting a signal to be driven, the signal driver including termination resistors; a first electrostatic current discharge module, providing first discharge paths for electrostatic currents generated in the signal driver; a second electrostatic current discharge module, connected in series with the termination resistors, providing second discharge paths for the electrostatic currents; and a power clamp, used for conducting the power clamp circuit, the first discharge paths and the second discharge paths when a power supply voltage of the signal driver exceeds a clamping voltage. The present disclosure provides different discharge paths, which effectively reduces voltage borne by a protected device through a voltage division method, and improves the device's ability to protect against electrostatic discharge.

Abstract: Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

Abstract: On-chip peltier cooling devices and manufacturing methods thereof are provided. The device comprises: a first type well, a polysilicon gate and dummy gates, first type doped regions, a second type doped region, a first and second via. The dummy gate is formed as a two-segment structure with an interval, and there is no gate oxide layer between portions of the dummy gate which are far away from the interval and the semiconductor substrate. The first type doped region at least overlaps with an orthographic projection region of the first segment of the dummy gate on the semiconductor substrate. The second type doped region at least overlaps with orthographic projection regions of the polysilicon gate and the second segment of the dummy gate on the semiconductor substrate. In this application, the heat flows from inside of the device to its surface, to realize heat dissipation and cooling.

Abstract: Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

Abstract: The present disclosure provides an SST driving circuit, a chip, and a driving output method. The SST driving circuit includes: a signal driver for driving and outputting a signal to be driven, the signal driver including termination resistors; a first electrostatic current discharge module, providing first discharge paths for electrostatic currents generated in the signal driver; a second electrostatic current discharge module, connected in series with the termination resistors, providing second discharge paths for the electrostatic currents; and a power clamp, used for conducting the power clamp circuit, the first discharge paths and the second discharge paths when a power supply voltage of the signal driver exceeds a clamping voltage. The present disclosure provides different discharge paths, which effectively reduces voltage borne by a protected device through a voltage division method, and improves the device's ability to protect against electrostatic discharge.

Abstract: An apparatus controls access to a memory module coupled to a host controller via a data bus to exchange data with the host controller. The apparatus has a configurable information memory and comprises: an access control input port via which the apparatus receives a data access command from the host controller; a control unit to identify a data access command including an access address directed to a predetermined storage region of the memory module, and generate an information processing command based at least on the access address directed to the predetermined storage region, such that the control unit can configure the information memory based on the information processing command or provide the information processing command to the memory module; and an access control output port via which the apparatus provides the information processing command to the memory module, such that the memory module outputs corresponding data information to the host controller based on the information processing command.

Abstract: The present disclosure provides a power clamp circuit, a chip, and a dual-clamp method. The power clamp circuit is applied to a circuit system to monitor the power supply voltage of the circuit system and includes: an EOS protection module, for outputting an EOS protection triggering signal when it is determined that the circuit system is electrically overstressed based on the power supply voltage; an ESD protection module, for outputting an ESD protection triggering signal when it is determined that an electrostatic event is present in the circuit system based on the power supply voltage; a switch control module, for turning on a discharge path based on the EOS protection signal to discharge an EOS current, and turning on the discharge path based on the ESD protection signal to discharge an electrostatic current.

Abstract: The present application pertains to a processing device or a distributed processing system using the processing device.